DE71/DE110 POWER ELECTRONICS DEC 2015

Similar documents
(a) average output voltage (b) average output current (c) average and rms values of SCR current and (d) input power factor. [16]

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

6. Explain control characteristics of GTO, MCT, SITH with the help of waveforms and circuit diagrams.

ELEC4240/ELEC9240 POWER ELECTRONICS

Power Electronics (BEG335EC )

UNIVERSITY QUESTIONS. Unit-1 Introduction to Power Electronics

Power Electronics (Sample Questions) Module-1

DC Chopper. Prof. Dr. Fahmy El-khouly

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)

11. Define the term pinch off voltage of MOSFET. (May/June 2012)

Chapter 6 Soft-Switching dc-dc Converters Outlines

ELEC387 Power electronics

EE POWER ELECTRONICS

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad

ELG3336: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives!

VALLIAMMAI ENGINEERING COLLEGE DEPARTMENT OF ELECTRONICS AND INSTRUMENTATION

Appendix: Power Loss Calculation

AC Theory and Electronics

DHANALAKSHMI SRINIVASAN COLLEGE OF ENGINEERING AND TECHNOLY Mamallapuram chennai

Subject Code: Model Answer Page No: / N

The typical ratio of latching current to holding current in a 20 A thyristor is (A) 5.0 (B) 2.0 (C) 1.0 (D) 0.5

Obsolete Product(s) - Obsolete Product(s)

Dr.Arkan A.Hussein Power Electronics Fourth Class. Commutation of Thyristor-Based Circuits Part-I

Sample Exam Solution

ECEN4797/5797 Lecture #11

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

Operating Junction and 55 to +175 C Storage Temperature Range

SIMULATION STUDIES OF HALF-BRIDGE ISOLATED DC/DC BOOST CONVERTER

High Voltage DC Transmission 2

( ) ON s inductance of 10 mh. The motor draws an average current of 20A at a constant back emf of 80 V, under steady state.

Design of a Cell Charger for an ipad Using Full Bridge Rectifier and Flyback Converter

UNIT-III STATOR SIDE CONTROLLED INDUCTION MOTOR DRIVE

MICROCONTROLLER BASED BOOST PID MUNAJAH BINTI MOHD RUBAEE

POWER ELECTRONICS PO POST GRAD POS UATE 2010 AC Ch AC o Ch p o per Prepare Prep d are by: d Dr. Gamal Gam SOwilam SOwila 11 December 2016 ١

POWER ELECTRONICS. Alpha. Science International Ltd. S.C. Tripathy. Oxford, U.K.

POWER ELECTRONICS LAB

Class D Audio Amplifier Design

Power Electronics. Contents

WPT2N32 WPT2N32. Descriptions. Features. Applications. Order information. Http//:

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS

POWER ELECTRONICS LAB MANUAL

EXPERIMENT 4 SWITCHED MODE DC/DC CONVERSION USING BUCK CONVERTER

EEL 5245 POWER ELECTRONICS I Lecture #4: Chapter 2 Switching Concepts and Semiconductor Overview

18 N Amps, 500 Volts N-CHANNEL MOSFET. Power MOSFET DESCRIPTION FEATURES SYMBOL

Experiment DC-DC converter

IRF130, IRF131, IRF132, IRF133

University of Washington Department of Electrical Engineering EE 351: Introduction to Energy Devices and Systems. Lab 1: Power Electronic Converters

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

International Journal of Advance Engineering and Research Development

N & P-Channel 100-V (D-S) MOSFET

TSP13N 50M / TSF13N N50M

Super Junction MOSFET

Module 3. DC to DC Converters. Version 2 EE IIT, Kharagpur 1

List of Experiments. 1. Steady state characteristics of SCR, IGBT and MOSFET. (Single phase half wave rectifier). (Simulation and hardware).

ELG4139: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives!

EE204 Basic Electronics and Electric Power Course Notes Energy Sources and Power Conversion

Fundamentals of Power Electronics

FREQUENTLY ASKED QUESTIONS

Super Junction MOSFET

Other Electronic Devices

IRGBC30M Short Circuit Rated Fast IGBT

HCI70R500E 700V N-Channel Super Junction MOSFET

Module 1. Power Semiconductor Devices. Version 2 EE IIT, Kharagpur 1

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

Name of chapter & details

Chapter 1 INTRODUCTION TO POWER ELECTRONICS SYSTEMS

SINGLE-STAGE HIGH-POWER-FACTOR SELF-OSCILLATING ELECTRONIC BALLAST FOR FLUORESCENT LAMPS WITH SOFT START

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

Improvements of LLC Resonant Converter

International Journal of Scientific & Engineering Research, Volume 5, Issue 3, March-2014 ISSN

13. DC to AC Converters

HCD80R600R 800V N-Channel Super Junction MOSFET

Development of a Single-Phase PWM AC Controller

Single-Phase Full-Wave Phase-Controlled Rectifier


Features. Symbol JEDEC TO-204AA GATE (PIN 1)

Lecture 19 - Single-phase square-wave inverter

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Lecture 41 SIMPLE AVERAGING OVER T SW to ACHIEVE LOW FREQUENCY MODELS

AN2170 APPLICATION NOTE MOSFET Device Effects on Phase Node Ringing in VRM Power Converters INTRODUCTION

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

DEVELOPMENT OF A GATE DRIVE WITH OVERCURRENT PROTECTION CIRCUIT USING IR2110 FOR FAST SWITCHING HALF- BRIDGE CONVERTER

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )

AOL1422 N-Channel Enhancement Mode Field Effect Transistor

EEL 646 POWER ELECTRONICS II. Issa Batarseh. January 13, 2015

CHAPTER 2 DESIGN AND MODELING OF POSITIVE BUCK BOOST CONVERTER WITH CASCADED BUCK BOOST CONVERTER

Questions from the same exercise can be combined together to increase difficulty. Which one of the following properties of the diode is NOT true:

L MOSFETS, IDENTIFICATION, CURVES. PAGE 1. I. Review of JFET (DRAW symbol for n-channel type, with grounded source)

INVESTIGATION OF GATE DRIVERS FOR SNUBBERLESS OVERVOLTAGE SUPPRESSION OF POWER IGBTS

235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

Code No: R Set No. 1

POWER ELECTRONICS. Converters, Applications, and Design. NED MOHAN Department of Electrical Engineering University of Minnesota Minneapolis, Minnesota

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

ZCS-PWM Converter for Reducing Switching Losses

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6

LINEAR IC APPLICATIONS

A Highly Versatile Laboratory Setup for Teaching Basics of Power Electronics in Industry Related Form

Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.

Transcription:

Q.2 a. What is power loss in an ideal switch? Explain the conduction losses in a bipolar junction transistor with the help of circuit diagram. (8) Answer: IETE 1

b. Explain, how the power diode must be protected against the following:-(8) (i) Overvoltage (ii) Overcurrent (iii) Transients Answer: IETE 2

Q.3 a. How does a Power Bipolar Junction Transistor used as a switch? Draw its V- I characteristics and explain the significance of saturation, active and cut-off regions. (8) Answer: IETE 3

IETE 4

IETE 5

IETE 6

b. A Power MOSFET has I DSS = 2 ma, R DS(ON) = 0.3 Ω, duty cycle d = 50%, I D = 6 A, V DS = 100 V, t r = 100 ns and t f = 200 ns. If the frequency of switching is 40 KHz, then find (8) (i) on-state loss (ii) off-state loss (iii) turn-on switching loss (iv) turn-off switching loss Answer: Given Data I DSS = 2 ma, R DS(ON) = 0.3 Ω, duty cycle (d) = 50%, I D = 6 A, VDS = 100 V, t r = 100 ns, t f = 200 ns and frequency of switching(f) = 40 khz 1 1 The Time Period (T) = = = 25 µ S f 3 40(10 ) T Therefore, t ON = t OFF = = 12.5 µ S 2 IETE 7

t (i) On-State Loss (P ON ) = I 2 D R ON DS(ON) = T 6 X 0.3X12.5(10 6 25(10 ) 2 6 ) = 5.4 W. 3) 6 t (ii) Off-State Loss (P OFF ) =V DS(max) I OFF 100X 2(10 X12.5(10 ) DSS = 6 T 25(10 ) (iii) Turn-on Switching Loss (P SW(ON) ) = 9 VDS (max) I Dtr 100X 6X100(10 ) 3 X f = X 40(10 ) = 0.4 W. 6 6 (iv) Turn-off Switching Loss (P SW(OFF) ) = 9 VDS (max) I Dt f 100X 6X 200(10 ) 3 X f = X 40(10 ) = 0.8 W. 6 6 = 0.1W Q.4 a. What is the necessity of connecting two SCRs in parallel? Draw the circuit of connecting two SCRs in parallel and explain its operation with the help of onstate characteristics. (9) Answer: IETE 8

b. What are the most common methods of achieving commutation? Explain the commutation method by external source and explain its operation with the help of waveforms. (7) Answer: IETE 9

1. Capacitor Commutation 2. Commutation by Resonance 3. AC Line Commutation IETE 10

Q.5 a. Draw a neat diagram for Single Phase Full Wave Controlled Bridge Rectifier with a resistive load and explain its operation with the help of waveforms. (10) Answer: IETE 11

IETE 12

IETE 13

b. A single phase half wave controlled rectifier connected to a 150 V, 60 Hz source to supplying a resistive load of 10 Ω. If the delay angle α is30, then find: (i) the maximum load current (ii) the average load current (6) Answer: Given Data: VS = 150 V, f = 60 Hz, Resistive Load (R) = 10 Ω and Delay Angle (α ) = 30 Peak Load Voltage = V m = 2 V S = 1.414 X 150 = 212 V. V (i) Maximum Load Current (I m ) = m 212 = = 21. 2 A R 10 ( I )(1 + cosα) (ii) Average Load Current = m (21.2)(1 + cos30 ) = = 6.3A 2π 2π Q.6 a. Draw a neat diagram for Three Phase Half Wave Controlled Rectifier circuit with a resistive load and explain its operation with waveforms. (10) Answer: IETE 14

IETE 15

IETE 16

b. A six pulse half controlled bridge rectifier is connected to a three phase 220 V AC source. Calculate the firing angle if the terminal voltage of the rectifier is 240 V. What is the maximum value of the DC output voltage? (6) Answer: Given that the terminal voltage of the rectifier (V o(avg.) ) = 240 V and the source voltage V L(S) = 220 V 220 V = 311 V. Therefore, the maximum voltage (V L(m) ) = 2 ( ) L(S ) (i) The formula for finding of Firing Angle ( ) VO( 3. V 2π 240VX 2π 3X 311V Hence ( + ) = = = 1. 62 1 cosα avg.) L( m) So that ( cos α ) = 0. 62 Therefore, the Firing Angle ( α ) = 52 V = 2 ( ) 3 2π α is ( V ) V ( 1 cosα ) O( avg.) = L( m) + (ii) Maximum value of DC output voltage is obtained with ( α = 0 ) is given by IETE 17

3 ( V )( 1+ cosα ) = ( 311)( 1+ 1) V 3 VO(max) = L( m) = 297 2π 2π Q.7 a. What is a DC Chopper? Explain its principle with the help of suitable diagram and waveforms. What are its various industrial applications? (8) Answer: IETE 18

IETE 19

IETE 20

b. What is a Buck-Boost Chopper? Draw its circuit configuration and explain its working with the help of voltage and current waveforms. (8) Answer: IETE 21

IETE 22

IETE 23

IETE 24

Q.8 a. Explain the working of a full bridge VSI with a neat circuit diagram and waveforms. (8) Answer: IETE 25

IETE 26

IETE 27

b. What are the most commonly used methods of pulse width modulation? Explain multiple pulse width modulation with the help of waveforms when the number of pulses (m) = 2 and 3. (8) Answer: IETE 28

IETE 29

Q.9 a. What do you mean by AC power control? Discuss the differences between integral cycle control and AC phase control. (8) Answer: IETE 30

IETE 31

IETE 32

IETE 33

IETE 34

b. Compare the advantages and disadvantages of semiconductor switches over mechanical switches. (8) Answer: IETE 35

IETE 36

IETE 37

IETE 38

IETE 39

TEXT BOOK I. Power Electronics for Technology, First Impression (2006), Ashfaq Ahmed, Purdue University - Calumet, Pearson Education IETE 40