Lecture (08) Bipolar Junction Transistor (2)

Similar documents
Lecture (06) Bipolar Junction Transistor

Lecture (09) Bipolar Junction Transistor 3

Session 4: Analog Circuits. BJT Biasing Single stage amplifier

BJT as an Amplifier and Its Biasing

Biasing. Biasing: The DC voltages applied to a transistor in order to turn it on so that it can amplify the AC signal.

Lecture 9. Bipolar Junction Transistor (BJT) BJT 1-1

Electronic Circuits Laboratory EE462G Lab #8. BJT Common Emitter Amplifier

Lecture 14. Bipolar Junction Transistor (BJT) BJT 1-1

Chapter 4 DC Biasing BJTs. BJTs

CHAPTER 3 THE BIPOLAR JUNCTION TRANSISTOR (BJT)

Chapter 5 Transistor Bias Circuits

EE 330 Lecture 18. Characteristics of Finer Feature Size Processes. Bipolar Process

การไบอ สทรานซ สเตอร. Transistors Biasing

Lab 4. Transistor as an amplifier, part 2

By: Dr. Ahmed ElShafee

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model

By: Dr. Ahmed ElShafee

Lecture (01) Transistor operating point & DC Load line

EE 330 Lecture 19. Bipolar Devices

EE 434 Lecture 21. MOS Amplifiers Bipolar Devices

Figure1: Basic BJT construction.

Bipolar Junction Transistors

fiziks Institute for NET/JRF, GATE, IIT-JAM, M.Sc. Entrance, JEST, TIFR and GRE in Physics

FYSE400 ANALOG ELECTRONICS

Chapter 3 Bipolar Junction Transistors (BJT)

(a) BJT-OPERATING MODES & CONFIGURATIONS

CO2005: Electronics I. Transistor (BJT) Electronics I, Neamen 3th Ed. 1

Lecture (04) BJT Amplifiers 1

Introduction PNP C NPN C

Transistors. electrons N P N holes. Base. An NPN device makes a transistor

EXPERIMENT 10: Power Amplifiers

Bipolar Junction Transistors

Chapter 6: Transistors and Gain

BJT Amplifiers: Overview

ITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward

CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN

Electronic Devices, 9th edition Thomas L. Floyd. Input signal. R 1 and R 2 are selected to establish V B. If the V CE

Lecture 12. Bipolar Junction Transistor (BJT) BJT 1-1

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering

Bipolar Junction Transistor (BJT) Basics- GATE Problems

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

7. Bipolar Junction Transistor

UNIT I - TRANSISTOR BIAS STABILITY

Lecture (06) BJT Amplifiers 3

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

When you have completed this exercise, you will be able to determine the ac operating characteristics of

Bipolar Junction Transistors (BJTs) Overview

Bipolar Junction Transistor

Lecture (07) BJT Amplifiers 4 JFET (1)

Laboratory Four - Bipolar Junction Transistor (BJT)

Lecture (06) BJT Amplifiers 3

Electronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.

EE 330 Lecture 16. Comparison of MOS Processes Bipolar Process

N9-1. Gain. Input and Output Impedances. Amplifier Types. Z out. Z in = AH( jω)

EE105 Fall 2015 Microelectronic Devices and Circuits

Chapter 3. Bipolar Junction Transistors

Lecture (05) BJT Amplifiers 2

ชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร

BJT Circuits (MCQs of Moderate Complexity)

EEE225: Analogue and Digital Electronics

Transistors and Applications

I B. VCE =const. 25mV I C. V out = I C R C = β I B R C = βr C βr e

The Common Emitter Amplifier Circuit

Bipolar Transistors. Ideal Transistor. Reading: (4-5 th edition) 8-16, Bipolar Transistor - Terminals. NPN Bipolar Transistor Physics

Electronics EECE2412 Spring 2017 Exam #2

ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline:

Lecture 3: Transistors

BJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1

Biasing of BJT IENGINEERS- CONSULTANTS LECTURE NOTES SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU. Page 1

Electronic Circuits EE359A

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)

Experiments #6. Differential Amplifier

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS

Electrical, Electronic and Digital Principles (EEDP) Lecture 3. Other BJT Biasing Techniques باسم ممدوح الحلوانى

ECEN 325 Lab 7: Characterization and DC Biasing of the BJT

Celso José Faria de Araújo, M.Sc.

UNIT 3: FIELD EFFECT TRANSISTORS

Concepts to be Covered

Phy 335, Unit 4 Transistors and transistor circuits (part one)

DC Bias. Graphical Analysis. Script

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB

Diode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!

Transistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018

I C I E =I B = I C 1 V BE 0.7 V

ET215 Devices I Unit 4A

Lab 2: Discrete BJT Op-Amps (Part I)

Transistor Biasing Nafees Ahamad

Analog Electronics (Course Code: EE314) Lecture 9 10: BJT Small Signal, Biasing, Amplifiers

Early Effect & BJT Biasing

Physics of Bipolar Transistor

Chapter Two "Bipolar Transistor Circuits"

Exercise 2: AC Voltage and Power Gains

BIPOLAR JUNCTION TRANSISTORS (BJTs) Dr Derek Molloy, DCU

Electronic Circuits - Tutorial 07 BJT transistor 1

Linear electronic. Lecture No. 1

Last time: BJT CE and CB amplifiers biased by current source

Lecture #3 ( 2 weeks) Transistors

TO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT)

Transcription:

Lecture (08) ipolar Junction Transistor (2) y: Dr. Ahmed lshafee 1 JT haracteristic ollector haracteristic urves 2

Applying fixed V, increasing V Saturation Assume that V is set to produce a certain value of I and V is zero both the junction and the junction are forwardbiased because the base is at approximately 0.7 V while the emitter and the collector are at 0 V. I is zero. Saturation is both junctions 3 are forward biased As V is increased, V increases as the collector current increases, because V remains less than 0.7 V due to the forward biased base collector junction. 4

Active when V exceeds 0.7 V, the base collector junction becomes reverse biased JT become active, or linear, region I levels off and remains essentially constant for a given value of I as V continues to increase 5 breakdown When V reaches a sufficiently high voltage, the reverse biased basecollector junction goes into breakdown; and the collector current increases rapidly as indicated by the part of the curve to the right of point 6

cutoff When I =0, the transistor is in the cutoff region although there is a very small collector leakage current as indicated. utoff is the nonconducting state of a transistor. 7 xample 03 8

9 Applying fixed V, increasing V utoff when I = 0, the transistor is in the cutoff region I O is extremely small, it will usually be neglected in circuit analysis V = V O represents collector toemitter with the base open. 10

Applying fixed V, increasing V Saturation When the base emitter junction becomes forward biased and the base current is increased, the collector current also increases (I =βi ) V decreases as a result of more drop across the collector resistor (V = V I R). V reaches its saturation value, V(sat), base collector junction becomes forwardbiased and At the point of saturation, the (I =βi ) is no longer valid. 11 D Load Line dc load line drawn on a family of curves connecting the cutoff point and the saturation point. The bottom of the load line is at ideal cutoff where I =0 and V =V. 12

xample 04 12 13 12 V over the Vsat then transistor is in active mode, 14

TH JT AS AN AMPLIFIR Amplification is the process of linearly increasing the amplitude of an electrical signal and is one of the major properties of a transistor. a JT exhibits current gain (β) When a JT is biased in the active (or linear) region, 15 Dr. Ahmed lshafee, AU : Fall 2017, lectronic ircuits D quantities V V I I I V V A quantities Vbe Vce Vb Vc r e 16 Dr. Ahmed lshafee, AU : Fall 2017, lectronic ircuits

An ac voltage, Vs, is superimposed on the dc bias voltage V by capacitive coupling as shown. The dc bias voltage V is connected to the collector through the collector resistor, R. 17 Dr. Ahmed lshafee, AU : Fall 2017, lectronic ircuits The ac input voltage produces an ac base current, which results in a much larger ac collector current. The ac collector current produces an ac voltage across R, thus producing an amplified, but inverted, internal ac emitter resistance r e is designated in and appears in series with R. The ac base voltage is The ac collector voltage, Vc, equals the ac voltage drop across R Since the ac collector voltage is 18 Dr. Ahmed lshafee, AU : Fall 2017, lectronic ircuits

the ac voltage gain, Av, of the transistor remember that Vb 19 Dr. Ahmed lshafee, AU : Fall 2017, lectronic ircuits 20 Dr. Ahmed lshafee, AU : Fall 2017, lectronic ircuits

xample 06 21 Dr. Ahmed lshafee, AU : Fall 2017, lectronic ircuits xample 06 22 Dr. Ahmed lshafee, AU : Fall 2017, lectronic ircuits

Thanks,.. See you next week (ISA), 23