SEMICONDUCTOR TECHNICAL DATA Order this document by MJE23/D The MJE23 is an applications specific device designed to provide low dropout linear regulation for switching regulator post regulators, battery powered systems and other applications. The MJE23 is fully specified in the saturation region and exhibits the following main features: High Gain Limits Base Drive Losses to only 2% of Circuit Output Current Gain is Minimum at IC =. Amp, VCE = 7. Volts Excellent Saturation Voltage Characteristic, Volts Maximum at. Amp PNP LOW DROPOUT TRANSISTOR 4. AMPERES 4 VOLTS MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted.) Rating Symbol Value Unit Collector Emitter Sustaining Voltage VCEO 4 Vdc Collector Base Voltage VCB 5 Vdc Emitter Base Voltage VEB 5. Vdc Collector Current Continuous Collector Current Peak IC ICM Base Current Continuous IB 4. Adc 4. 8. Adc Total Power Dissipation @ TC = 25 C Derate above 25 C PD 75 Watts W/ C Operating and Storage Temperature TJ, Tstg 65 to +5 C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes: /8 from Case for 5 seconds RθJC RθJA.67 7 C/W TL 275 C CASE 22A 6 TO 22AB ELECTRICAL CHARACTERISTICS (TC = 25 C Unless Otherwise Noted) OFF CHARACTERISTICS* Characteristic Symbol Min Typ Max Unit Collector Emitter Sustaining Voltage (IC =. ma, I = ) VCEO(sus) 4 65 Vdc Emitter Base Voltage (IE = µa) VEBO 7. Vdc Collector Cutoff Current (VCE = 7. Vdc, IB = ) (VCE = 2 Vdc, IB = ) ON CHARACTERISTICS* Collector Emitter Saturation Voltage (IC =. Adc, IB = 2 madc) (IC =. Adc, IB = 5 madc) (IC =. Adc, IB = 2 madc) (IC = 2. Adc, IB = 5 madc) (IC = 2. Adc, IB = 2 madc) (IC = 4. Adc, IB = 2 madc) ICEO VCE(sat) * Indicates Pulse Test: Pulse Width = 3 µs max, Duty Cycle = 2%. (continued).6.3. 5.45 25.3 5.4.35.75 µadc Vdc Motorola, Inc. 995 Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS continued (TC = 25 C Unless Otherwise Noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS* (continued) Base Emitter Saturation Voltage (IC =. Adc, IB = 2 madc) (IC = 2. Adc, IB = 5 madc) (IC = 4. Adc, IB = 2 madc) DC Current Gain (IC =. Adc, VCE = 7. Vdc) (IC =. Adc, VCE = Vdc) (IC = 2. Adc, VCE = 7. Vdc) (IC = 2. Adc, VCE = Vdc) (IC = 4. Adc, VCE = 7. Vdc) (IC = 4. Adc, VCE = Vdc) Base Emitter On Voltage (IC =. Adc, VCE =. Vdc) (IC = 2. Adc, VCE =. Vdc) (IC = 4. Adc, VCE =. Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC =. Adc, VCE = 4. Vdc, f =. MHz) * Indicates Pulse Test: Pulse Width = 3 µs max, Duty Cycle = 2%. CE(sat), COLLECTOR EMITTER V TJ = 25 C.. IB = 2 ma 5 ma ma 2 ma Figure. Saturation Voltage versus Collector Current as a Function of Base Drive VCE(sat), COLLECTOR EMITTER.8.4 VBE(sat) hfe VBE(on) 75 8 45 45.77.87. 7 8 2 4 75 79.75.84.9.95.2.4 225 225 7 8.9..2 Vdc Vdc ft 5..5 MHz IC = 4 A, IB = ma IC = 2 A, IB = 5 ma IC = A, IB = 2 ma 2 4 6 8 TJ, CASE TEMPERATURE ( C) Figure 2. Saturation Voltage versus Temperature VBE(sat), BASE EMITTER.2..9.8.7.5.4.3 TJ = 25 C.. IB = 2 ma 5 ma 2 ma Figure 3. Base Emitter Saturation Voltage VBE(S), BASE EMITTER..9.8.7 2 4 6 8 TJ, CASE TEMPERATURE ( C) IC = 4 A, IB = ma IC = 2 A, IB = 5 ma IC = A, IB = 2 ma Figure 4. Base Emitter Saturation Voltage versus Temperature 2 Motorola Bipolar Power Transistor Device Data
4 DC CURRENT GAIN TJ = 25 C VCE = 2 V 7 V V. Figure 5. DC Current Gain GAIN CHANGE RELATIVE TO 25 C (%) VCE = 2, 7, or V 3 2 TJ = C 5 C. Figure 6. DC Current Gain Variation TYPICAL LOW PASS TRANSISTOR APPLICATION The MJE23 was designed to operate as a low pass transistor in conjunction with the LT23 offered by Linear Technology Corporation. Together they provide several excellent advantages: A dropout voltage below 5 mv at. amp, increasing to only 225 mv at 4. amps, typically. Line and load regulation are within 5. mv. Initial output accuracy is better than percent. Full short circuit protection is included. Base drive loss is less than 2% of output current... even at 4. full amps output. The high gain and excellent collector emitter saturation voltage make the combination better than monolithic devices. 5.6 V µf* *REQUIRED IF DEVICE IS *MORE THAN 6 FROM MAIN *FILTER CAPACITOR. #REQUIRED FOR STABILITY #(LARGER VALUES INCREASE #STABILITY). DRIVE LT23 GND 6 Ω 2 Ω FB MJE23 5 V OUTPUT µf# TYPICAL REGULATOR DROPOUT VOLTAGE (VOLTS).4.3. 2 3 4 5 REGULATOR CIRCUIT OUTPUT CURRENT (AMPS) Figure 7. Typical Dropout Voltage of a MJE23 and LT23 Circuit TJ = 5 C 5 ms DC ms. VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 8. Maximum Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED.5 D =.5.3 D =. D =. D =.5.5.3 D =.2.2 D =.. SINGLE PULSE..2.5. t, TIME (ms) t P(pk) t2 DUTY CYCLE, D = t/t2 RθJC(t) = r(t) RθJC RθJC =.67 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) RθJC(t).5 2 5 2 5 2 5 K Figure 9. Typical Thermal Response 4 Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS H Q Z L V G B 4 2 3 N D A K F T U R S J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57 2 4.48 5.75 B.38.45 9.66 8 C.6.9 4.7 4.82 D.25.35 4.88 F.42.47 3.6 3.73 G.95.5 2.42 2.66 H..55 2.8 3.93 J.8.25.46 4 K.5.562 2.7 4.27 L.45.6.5.52 N.9 4.83 5.33 Q. 2.54 3.4 R.8. 2.4 2.79 S.45.55.5.39 T 35 55 5.97 6.47 U..5..27 V.45.5 Z.8 2.4 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 22A 6 TO 22AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 292; Phoenix, Arizona 8536. 8 44 2447 6F Seibu Butsuryu Center, 3 4 2 Tatsumi Koto Ku, Tokyo 35, Japan. 3 352 835 MFAX: RMFAX@email.sps.mot.com TOUCHTONE (62) 244 669 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://design NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong. 852 26629298 6 Motorola Bipolar Power Transistor Device Data MJE23/D
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.