INSULATED GATE BIPOLAR TRANSISTOR PD - 9.780 UltraFast IGBT Features Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency curve G V ES = 500V V E(sat) 3.0V E n-channel @V GE = 5V, I = 5A Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. Absolute Maximum Ratings TO-247A Parameter Max. Units V ES ollector-to-emitter Voltage 500 V I @ T = 25 ontinuous ollector urrent 25 I @ T = 0 ontinuous ollector urrent 5 A I M Pulsed ollector urrent 50 I LM lamped Inductive Load urrent 50 V GE Gate-to-Emitter Voltage ±20 V E ARV Reverse Voltage Avalanche Energy ƒ mj P D @ T = 25 Maximum Power Dissipation 0 W P D @ T = 0 Maximum Power Dissipation 42 T J Operating Junction and -55 to +50 T STG Storage Temperature Range Soldering Temperature, for sec. 300 (0.063 in. (.6mm) from case) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θj Junction-to-ase ------ ------.2 R θs ase-to-sink, flat, greased surface ------ 0.24 ------ /W R θja Junction-to-Ambient, typical socket mount ------ ------ 40 Wt Weight ------ 6 (0.2) ------ g (oz)
Electrical haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 500 ---- ---- V V GE = 0V, I = 250µA V (BR)ES Emitter-to-ollector Breakdown Voltage 20 ---- ---- V V GE = 0V, I =.0A V (BR)ES / T J Temperature oeff. of Breakdown Voltage---- 0.46 ---- V/ V GE = 0V, I =.0mA V E(on) ollector-to-emitter Saturation Voltage ---- 2.3 3.0 I = 5A V GE = 5V ---- 2.8 ---- V I = 25A See Fig. 2, 5 ---- 2.6 ---- I = 5A, T J = 50 V GE(th) Gate Threshold Voltage 3.0 ---- 5.5 V E = V GE, I = 250µA V GE(th) / T J Temperature oeff. of Threshold Voltage ---- - ---- mv/ V E = V GE, I = 250µA g fe Forward Transconductance 2.3 8. ---- S V E = 0V, I = 5A I ES Zero Gate Voltage ollector urrent ---- ---- 250 µa V GE = 0V, V E = 500V ---- ---- 00 V GE = 0V, V E = 500V, T J = 50 I GES Gate-to-Emitter Leakage urrent ---- ---- ±0 na V GE = ±20V Switching haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) ---- 3 47 I = 5A Q ge Gate - Emitter harge (turn-on) ---- 6.2 9.3 n V = 400V See Fig. 8 Q gc Gate - ollector harge (turn-on) ---- 2 9 V GE = 5V t d(on) Turn-On Delay Time ---- 29 ---- T J = 25 t r Rise Time ---- ---- ns I = 5A, V = 400V t d(off) Turn-Off Delay Time ---- 9 60 V GE = 5V, R G = 23Ω t f Fall Time ---- 66 20 Energy losses include "tail" E on Turn-On Switching Loss ---- 0.24 ---- E off Turn-Off Switching Loss ---- 0.7 ---- mj See Fig. 9,,, 4 E ts Total Switching Loss ---- 0.4 0.6 t d(on) Turn-On Delay Time ---- 3 ---- T J = 50, t r Rise Time ---- 27 ---- ns I = 5A, V = 400V t d(off) Turn-Off Delay Time ---- 30 ---- V GE = 5V, R G = 23Ω t f Fall Time ---- 30 ---- Energy losses include "tail" E ts Total Switching Loss ---- 0.76 ---- mj See Fig., 4 L E Internal Emitter Inductance ---- 3 ---- nh Measured 5mm from package ies Input apacitance ---- 660 ---- V GE = 0V oes Output apacitance ---- ---- pf V = 30V See Fig. 7 res Reverse Transfer apacitance ---- 2 ---- ƒ =.0MHz Notes: Repetitive rating; V GE =20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V =80%(V ES ), V GE =20V, L=µH, R G = 23Ω, ( See fig. 3a ) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot.
LOAD URRENT (A) 40 30 20 Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power Dissipation = 24W Triangular wave: lamp voltage: 80% of rated Ideal diodes 0 0. 0 f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) 0 00 I, ollector-to-emitter urrent (A) T J = 25 T J = 50 V GE= 5V 20µs PULSE WIDTH V E, ollector-to-emitter Voltage (V) I, ollector-to-emitter urrent (A) 0 T J = 50 T J = 25 V = 0V 5µs PULSE WIDTH 0. 5 5 20 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics
Maximum D ollector urrent (A) 25 20 5 5 V GE = 5V V E, ollector-to-emitter Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0.5 V GE = 5V 80µs PULSE WIDTH I = 30A I = 5A I = 7.5A 0 25 50 75 0 25 50 T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature.0-60 -40-20 0 20 40 60 80 0 20 40 60 T, ase Temperature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature Thermal Response (Z thj ) 0. D = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) 2. Peak T J= P DMx Z thj + T 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-ase
, apacitance (pf) 400 200 00 800 600 400 200 V GE = 0V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V, Gate-to-Emitter Voltage (V) GE 20 6 2 8 4 V E = 400V I = 5A 0 0 V E, ollector-to-emitter Voltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage 0 0 20 30 40 Q, Total Gate harge (n) G Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 0.48 0.46 0.44 0.42 0.40 V = 400V V GE = 5V T = 25 I = 5A Total Switching Losses (mj) R G = 50 Ω V GE = 5V V = 400V I = 30A I = 5A I = 7.5A 0.38 0 20 30 40 50 60 R G, Gate Resistance ( Ω) W 0. -60-40 -20 0 20 40 60 80 0 20 40 60 T, ase Temperature ( ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. ase Temperature
Total Switching Losses (mj) 2.0.6.2 0.8 0.4 R G = 23 Ω T = 50 V = 400V V GE = 5V I, ollector-to-emitter urrent (A) 0 V GE = 20V T J = 25 SAFE OPERATING AREA 0.0 0 20 30 40 I, ollector-to-emitter urrent (A) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent A 0 00 V E, ollector-to-emitter Voltage (V) Fig. 2 - Turn-Off SOA * 20.30 (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X 5.90 (.626) 5.30 (.602) - B - 2 3 3.40 (.33) 3.00 (.8) - A - 3.65 (.43) 3.55 (.40) 0.25 (.0) M 5.50 (.27) 2X - - 4.30 (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77).40 (.056) 3X.00 (.039) 0.25 (.0) M A S D B M - D - 5.30 (.209) 4.70 (.85) 2.50 (.089).50 (.059) 4 0.80 (.03) 3X 0.40 (.06) 2.60 (.2) 2.20 (.087) NOTES: DIMENSIONS & TOLERANING PER ANSI Y4.5M, 982. 2 ONTROLLING DIMENSION : INH. 3 DIMENSIO NS ARE SHOW N MILLIMETERS (INHES). 4 ONFORM S TO JEDE OUTLINE TO-247A. LEAD ASSIGNMENTS - GATE 2 - O LLETO R 3 - EMITTER 4 - O LLETO R * LONGER LEADED (20mm) VERSION AVAILABLE (TO-247AD) TO ORDE R ADD "-E " SUFFIX TO PART NUMBER ONFORMS TO JEDE OUTLINE TO-247A (TO-3P) Dimensions in Millimeters and (Inches)
50V 00V L V * D.U.T. 0-400V 480µF 960V R L = 400V 4 X I @25 * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - lamped Inductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit I 50V 00V L Driver* D.U.T. V ƒ Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., V = 400V 90% ƒ V 90% % t d(off) Fig. 4b - Switching Loss Waveforms I 5% % t d(on) tr E on t f E off t=5µs E ts = (E on +E off )
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