Darlington Silicon Power Transistors Designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 500 (Typ) @ I C =.0 Adc Collector Emitter Sustaining Voltage @ 00 madc V CEO(sus) = 60 Vdc (Min) N6667 = 80 Vdc (Min) N6668 Low Collector Emitter Saturation Voltage V CE(sat) =.0 Vdc (Max)@ I C = 5.0 Adc Monolithic Construction with Built In Base Emitter Shunt Resistors TO 0AB Compact Package Complementary to N687, N688 These Devices are Pb Free and are RoHS Compliant* www.onsemi.com PNP SILICON DARLINGTON POWER TRANSISTORS 0 A, 60 80 V, 65 W COLLECTOR BASE 8 k 0 TO 0 CASE A STYLE EMITTER MARKING DIAGRAM Figure. Darlington Schematic N666x AYWWG x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb Free Package ORDERING INFORMATION Device Package Shipping *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N6667G N6668G TO 0 (Pb Free) TO 0 (Pb Free) 50 Units/Rail 50 Units/Rail Semiconductor Components Industries, LLC, 0 November, 0 Rev. 8 Publication Order Number: N6667/D
MAXIMUM RATINGS (Note ) Rating Symbol N6667 N6668 ÎÎÎ Unit Collector Emitter Voltage V CEO 60 80 Collector Base Voltage V CB 60 80 Emitter Base Voltage V EB ÎÎÎÎ 5.0 Collector Current Continuous I C ÎÎÎÎ 0 ÎÎÎ Peak ÎÎÎ 5 ÎÎÎ Adc Base Current I B ÎÎÎÎ 50 ÎÎÎ madc Total Device Dissipation @ T C = 5 C P D ÎÎÎÎ 65 ÎÎÎ W Derate above 5 C W/ C Total Device Dissipation @ T A = 5 C P Derate above 5 C D.0 ÎÎÎÎ 0.06 ÎÎÎ W W/ C ÎÎÎÎ Operating and Storage Junction Temperature Range T J, T stg Î 65 to + 50 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ÎÎÎ Characteristic Symbol Î Max ÎÎÎ Unit ÎÎÎ Thermal Resistance, Junction to Case ÎÎÎ Thermal Resistance, Junction to Ambient R JC Î R JA C.9 ÎÎÎ C/W 6.5 ÎÎÎ C/W ELECTRICAL CHARACTERISTICS (Note ) (T C = 5 C unless otherwise noted) ÎÎÎ Characteristic Symbol ÎÎÎ Min ÎÎÎÎ Max ÎÎÎ Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note ) N6667 ÎÎÎ V CEO(sus) (I C = 00 madc, I B ÎÎÎ 60 ÎÎÎÎ ÎÎÎ Vdc = 0) N6668 80 ÎÎÎ Collector Cutoff Current (V CE = 60 Vdc, I B = 0) N6667 I CEO ÎÎÎ ÎÎÎ (V CE = 80 Vdc, I B = 0) N6668 ÎÎ.0 ÎÎÎÎ.0 ÎÎÎ madc ÎÎÎ Collector Cutoff Current ÎÎ (V ÎÎÎ CE = 60 Vdc, V EB(off) =.5 Vdc) N6667 I (V CE = 80 Vdc, V EB(off ) =.5 Vdc) N6668 CEX 00 Adc ÎÎÎ ÎÎÎÎ 00 ÎÎÎ ÎÎÎ (V CE = 60 Vdc, V EB(off ) =.5 Vdc, T C = 5 C) N6667 ÎÎ ÎÎÎÎ.0 ÎÎÎ madc (V CE = 80 Vdc, V EB(off) =.5 Vdc, T C = 5 C) N6668.0 ÎÎÎ Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0) I EBO ÎÎÎ ÎÎÎÎ ÎÎÎ 5.0 madc ON CHARACTERISTICS (Note ) ÎÎÎ DC Current Gain (I C = 5.0 Adc, V CE =.0 Vdc) h FE ÎÎÎ 000ÎÎÎÎ 0000ÎÎÎ ÎÎÎ (I C = 0 Adc, V CE =.0 Vdc) ÎÎ 00ÎÎÎÎ ÎÎÎ ÎÎÎ Collector Emitter Saturation Voltage (I C = 5.0 Adc, I B = 0.0 Adc) V CE(sat) ÎÎÎ ÎÎÎÎ.0 (I C = 0 Adc, I B = 0. Adc).0 ÎÎÎ Base Emitter Saturation Voltage(I C = 5.0 Adc, I B = 0.0 Adc) V BE(sat) ÎÎÎ ÎÎÎ (I C = 0 Adc, I B = 0. Adc) ÎÎ.8 ÎÎÎÎ.5 ÎÎÎ Vdc DYNAMIC CHARACTERISTICS ÎÎÎ Current Gain Bandwidth Product (I C =.0 Adc, V CE = 5.0 Vdc, f test =.0 MHz) h fe ÎÎÎ 0 ÎÎÎÎ ÎÎÎ Output Capacitance (V ÎÎÎ CB = 0 Vdc, I E = 0, f =.0 MHz) C ob ÎÎÎ 00 Î pf Small Signal Current Gain (I C =.0 Adc, V CE = 5.0 Vdc, f =.0 khz) h fe 000 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Indicates JEDEC Registered Data.. Pulse Test: Pulse Width 00 s, Duty Cycle %.
V CC - 0 V R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D, MUST BE FAST RECOVERY TYPES e.g., N585 USED ABOVE I B 00 ma MSD600 USED BELOW I B 00 ma FOR t d AND t r, D IS DISCONNECTED AND V = 0 t r, t f 0 ns DUTY CYCLE =.0% V APPROX + 8 V V APPROX - V 0 5 μs 5 R B D +.0 V TUT 8 k 0 R C SCOPE Figure. Switching Times Test Circuit PD, POWER DISSIPATION (WATTS) T A T C 80 60 0 0 T A T C t, TIME ( s) μ 0 7 5 0.7 0. 0. t r t f t s V CC = 0 V I C /I B = 50 I B = I B T J = 5 C.t d 0 0 0 0 60 80 00 0 0 60 T, TEMPERATURE ( C) Figure. Power Derating 0. 0. 0. 0. 0.7 5 7 0 I C, COLLECTOR CURRENT (AMPS) Figure. Typical Switching Times r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0. 0. 0. 0.05 0.0 0.0 0.0 0.0 D = 0. 0. 0.05 0.0 0.0 0.0 SINGLE PULSE P (pk) 0.05 0. 0. 5 0 0 50 00 00 500 000 t, TIME (ms) t t Figure 5. Thermal Response DUTY CYCLE, D = t /t Z θjc (t) = r(t) R θjc R θjc =.9 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) R θjc (t)
IC, COLLECTOR CURRENT (AMPS) 0 0 5 0. 0. 0. 0.05 0.0 0.0 T J = 50 C N6667 BONDING WIRE LIMIT N6668 THERMAL LIMIT @ T C = 5 C SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED V CEO 5 7 0 0 0 50 70 00 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Maximum Safe Operating Area dc 5 ms ms 00 μs There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 50 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 0% provided T J(pk) < 50 C. T J(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. hfe, SMALL-SIGNAL CURENT GAIN 0,000 5000 000 000 500 00 00 50 0 T C = 5 C V CE = VOLTS I C = AMPS C, CAPACITANCE (pf) 00 00 00 70 50 C ib T J = 5 C C ob 0 5 7 0 0 0 50 70 00 00 00 500 000 f, FREQUENCY (khz) 0 0. 0. 5 0 0 50 00 V R, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Small Signal Current Gain Figure 8. Typical Capacitance hfe, DC CURRENT GAIN 0,000 0,000 7000 5000 000 000 000 700 500 00 00 0. V CE = V T J = 50 C T J = 5 C T J = - 55 C 0. 0. 0.7 5 7 0 I C, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS).6 T J = 5 C. I C = A A 6 A.8. 0.6 0. 0.7 5 7 0 0 0 I B, BASE CURRENT (ma) Figure 9. Typical DC Current Gain Figure 0. Typical Collector Saturation Region
+ 5 V, VOLTAGE (VOLTS).5 T J = 5 C.5 V BE(sat) @ I C /I B = 50 V BE @ V CE = V V CE(sat) @ I C /I B = 50 0. 0. 0. 0.7 5 7 0 I C, COLLECTOR CURRENT (AMPS) V, TEMPERATURE COEFFICIENTS (mv/ C) θ + hfe @ VCE.0 V *I C /I B + + 5 C to 50 C + - 55 C to 5 C 0 - θ VC for V CE(sat) - - θ VB for V BE 5 C to 50 C - - 55 C to 5 C - 5 0. 0. 0. 0.7 5 7 0 I C, COLLECTOR CURRENT (AMP) Figure. Typical On Voltages Figure. Typical Temperature Coefficients 0 5 0 REVERSE FORWARD, COLLECTOR CURRENT ( A) μ IC 0 0 0 0 0 0 - + 0.6 V CE = 0 V T J = 50 C 00 C 5 C + 0. + 0. 0-0. - 0. - 0.6-0.8 - -. -. V BE, BASE-EMITTER VOLTAGE (VOLTS) Figure. Typical Collector Cut Off Region 5
PACKAGE DIMENSIONS TO 0 CASE A 09 ISSUE AH H Q Z L V G B N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 70 0.60.8 5.75 B 0.80 9.66 C 0.60 0.90.07.8 D 0.05 0.08 0.6 0.96 F 0. 0.6.6.09 G 0.095 0.05..66 H 0.0 0.6.80.0 J 0.0 0.0 0.6 0.6 K 00 6.70.7 L 0.05 0.060.5.5 N 0.90 0.0.8 5. Q 0.00 0.0.5.0 R 0.080 0.0.0.79 S 0.05 0.055.5.9 T 5 5.97 6.7 U 0.000 0.050 0.00.7 V 0.05 ---.5 --- Z --- 0.080 ---.0 STYLE : PIN. BASE. COLLECTOR. EMITTER. COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 807 USA Phone: 0 675 75 or 800 860 Toll Free USA/Canada Fax: 0 675 76 or 800 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 790 90 Japan Customer Focus Center Phone: 8 587 050 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative N6667/D