HMC639ST89 / 639ST89E

Similar documents
HMC639ST89 / 639ST89E

HMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22

HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz

HMC580ST89 / 580ST89E. Features OBSOLETE. DC GHz GHz GHz. db db db Gain Variation Over Temperature DC GHz 0.

Features OBSOLETE. DC GHz GHz GHz GHz GHz

HMC480ST89 / 480ST89E

HMC478SC70 / 478SC70E v

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]

Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma

HMC454ST89 / 454ST89E

HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.

Features OBSOLETE. = +25 C, as a function of Vdd. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter

HMC454ST89 / 454ST89E

TEL: FAX: v.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz Broadband Gain & Return Vdd =

Features OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd= +3V. Parameter Min. Typ. Max. Units Frequency Range GHz Gain db

HMC326MS8G / 326MS8GE

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = +7V, Idd = 1340 ma [1]

Features. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain

HMC457QS16G / 457QS16GE

Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter

HMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.

Features

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz

Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*

Features. = +25 C, Vcc = 5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Units

Features OBSOLETE. Isolation DC GHz db

Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*

Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

Features. Parameter Frequency Min. Typ. Max. Units DC GHz DC GHz DC GHz DC GHz DC GHz Isolation DC - 4.

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications

Features OBSOLETE. = +25 C, 50 Ohm System GHz degrees Insertion Loss 6-15 GHz 8 11 db. Return Loss (Input and Output) 6-15 GHz 7 db

Gain Control Range db

Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units

HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

HMC310MS8G / 310MS8GE. Features OBSOLETE. = +25 C, Vdd = +3V

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description

OBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description

Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]

HMC320MS8G / 320MS8GE. Features OBSOLETE. = +25 C, Vdd = +3V

HMC245QS16 / 245QS16E. Features OBSOLETE. Parameter Frequency Min. Typ. Max. Units. DC GHz DC GHz DC GHz

Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vss= -5V, Vdd= +5V, Control Voltage= 0/ +5V, 50 Ohm System. Frequency Range GHz Insertion Loss* 4 6.

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Features. Parameter Frequency Min. Typ. Max. Units

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vcc = +8V

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vctl = 0/+5 Vdc, 50 Ohm System RF1 / RF2 RF1 / RF2. trise, tfall (10/90% RF) ton, toff (50% CTL to 10/90% RF)

Features OBSOLETE. = +25 C, With 0/+5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Parameter Min. Typ. Max. Units Frequency Range GHz

Features. Parameter Frequency Min. Typ. Max. Units Insertion Loss DC GHz db

Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V

HMC241AQS16 / 241AQS16E

Features OBSOLETE. = +25 C, 50 Ohm System, Vcc= 3V

Features. = +25 C, Vcc = +3V

HMC270MS8G / 270MS8GE

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features +3V +5V GHz

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma

OBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)

HMC546MS8G / 546MS8GE

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features OBSOLETE. Parameter Min. Typ. Max. Units. Frequency Range GHz Insertion Loss 5 7 db. Input Return Loss 16 db

Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature

Analog Devices Welcomes Hittite Microwave Corporation

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

Features. Parameter Frequency Min. Typ. Max. Units Insertion Loss DC GHz db. DC GHz

Features. = +25 C, Vdd = +5V, 5 dbm Drive Level

Features. = +25 C, Vcc = +3V

Features. = +25 C, 50 Ohm System, Vcc= +3V

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, Vdd = +5 Vdc, 50 Ohm System

OBSOLETE. = +25 C, With Vdd = +5V & Vctl = 0/+5V. Parameter Frequency Min. Typ. Max. Units DC - 4 GHz GHz Attenuation Range DC - 10 GHz 10 db

HMC336MS8G / 336MS8GE. Features OBSOLETE. = +25 C, With 0/+5V Control, 50 Ohm System

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz GHz Attenuation Range DC - 5.

OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC - 5.

HMC346MS8G / 346MS8GE

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]

HMC274QS16 / 274QS16E. Features OBSOLETE. = +25 C, Vdd = +3V to +5V & Vctl = 0/Vdd. Parameter Frequency Min. Typical Max. Units

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram

Features. = +25 C, Vdd = 5V

Features. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 13 db

HMC368LP4 / 368LP4E FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs PHEMT MMIC AMP-DOUBLER-AMP, 9-16 GHz OUTPUT. Typical Applications.

HMC542LP4 / 542LP4E v

Transcription:

Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications, Vs= 5V, T A = +25 C Features Low Noise Figure: 2.3 db High P1dB Output Power: +22 dbm High Output IP3: +3 dbm Gain: 13 db 5 Ohm I/O s - No External Matching Industry Standard SOT9 Package General Description The HMC39ST9(E) is a GaAs PHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifi er covering.2 to 4. GHz. Packaged in an industry standard SOT9, the amplifi er can be used as either a cascadable 5 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifi er, or a Gain Block with up to +22 dbm output power. This versatile Gain Block Amplifi er is powered from a single +5V supply and requires no external matching components. The internally mat-ched topology permits this amplifi er to be readily ported between virtually any printed circuit board material, regardless of its dielectric constant, thickness, or composition. Parameter Min Typ. Max Min. Typ. Max. Units Frequency Range.7-2.2.2-4. GHz Gain 13 db Gain Variation Over Temperature.1.2.1.2 db/ C Input Return Loss 12 12 db Output Return Loss 12 14 db Reverse Isolation dbm Output Power for 1 db Compression (P1dB) 19 21 22 db Output Third Order Intercept (IP3) 35 3 35 3 dbm Noise Figure 2.3 2.5 db Supply Current (Icq) 9 1 1 9 1 1 ma Note: Data taken with broadband bias tee on device output. - 34

Broadband Gain & Return Loss Gain vs. Temperature 1 RESPONSE (db) 15 5 - S21 S11 S22-1 2 3 4 5 Input Return Loss vs. Temperature RETURN LOSS (db) - - 1 2 3 4 5 Reverse Isolation vs. Temperature -4C GAIN (db) Output Return Loss vs. Temperature RETURN LOSS (db) 14 12 4 2 1 2 3 4 5 - -4C - 1 2 3 4 5 Noise Figure vs. Temperature -4C REVERSE ISOLATION (db) - - -4C NOISE FIGURE (db) 4 2-4C -25 1 2 3 4 5 1 2 3 4 5-341

P1dB vs. Temperature 3 Psat vs. Temperature 3 P1dB (dbm) Power Compression @ 5 MHz Pout (dbm), GAIN (db), PAE (%) Output IP3 vs. Input Tone Power IP3 (dbm) 25 15 5 32 24 1 - - -12-4 4 12 45 4 35 3 25 Pout Gain PAE -4C 1 2 3 4 INPUT POWER (dbm) dbm 5 dbm dbm 1 2 3 4 Psat (dbm) Power Compression @ 2 MHz Pout (dbm), GAIN (db), PAE (%) 25 15 5 1 2 3 4 32 24 1 Pout Gain PAE -4C - - -12-4 4 12 INPUT POWER (dbm) Gain, Power, Output IP3 & Supply Current vs. Supply Voltage @ 5 MHz GAIN (db), P1dB (dbm), Psat (dbm), IP3 (dbm) 14 1 4 Gain P1dB Psat IP3 4.5 4.75 5 5.25 5.5 Vs (V) Is 14 1 4 Is (ma) - 342

Absolute Maximum Ratings Collector Bias Voltage (Vcc) +5.5 Volts RF Input Power (RFIN)(Vcc = +5 Vdc) +15 dbm Channel Temperature 15 C Continuous Pdiss (T = 5 C) (derate 13.3 mw/ C above 5 C). W Thermal Resistance (Channel to lead) 75. C/W Storage Temperature to +15 C Operating Temperature -4 to +5 C ESD Sensitivity (HBM) Class 1A Outline Drawing ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H39 HMC39ST9 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] H39 HMC39ST9E RoHS-compliant Low Stress Injection Molded Plastic % matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 C [2] Max peak refl ow temperature of C [3] 4-Digit lot number XXXX - 343

Pin Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off-chip DC blocking capacitor is required. 3 RFOUT 2, 4 GND Application Circuit RF Output and DC BIAS for the amplifi er. See Application Circuit for off-chip components. These pins and package bottom must be connected to RF/DC ground. - 344

Evaluation PCB List of Materials for Evaluation PCB 119394 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 - C3 pf Capacitor, 42 Pkg. C4 pf Capacitor, 3 Pkg. C5 2.2 μf Capacitor, Tantalum L1 47 nh Inductor, 3 Pkg. U1 HMC39ST9(E) PCB [2] 119392 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4 The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 5 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. - 345