6V PNP medium transistor in SOT89 Summary BV CEO > -6V BV ECO > -7V (cont) = 4.5A V CE(sat) < -8 @ -A R CE(sat) = 5m P D = 2.4 Complementary part number ZXTN96CZ Description Packaged in the SOT89 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features High gain Low saturation voltage High peak current 7V reverse blocking voltage B C E Applications High side driver Motor drive Load disconnect switch Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel TA 7 2 E C C B Pinout - top view Device marking M2 Issue - February 28 www.zetex.com
Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage V CBO -6 V Collector-Emitter voltage V CEO -6 V Emitter-Collector voltage (reverse blocking) V ECX -7 V Emitter-Base voltage V EBO -7 V Continuous Collector current (c) -4.5 A Base current I B - A Peak pulse current M -7 A Power dissipation at T A (a) P D. 8.8 m/ C Power dissipation at T A (b) P D.8 4.4 m/ C Power dissipation at T A (c) P D 2.4 9.2 m/ C Power dissipation at T A (d) P D 4.46 35.7 m/ C Power dissipation at T C (e) P D 26.7 23 m/ C Operating and storage temperature range T j, T stg -55 to 5 C Thermal resistance Parameter Symbol Limit Unit Junction to ambient (a) R JA 7 C/ Junction to ambient (b) R JA 68 C/ Junction to ambient (c) R JA 5 C/ Junction to ambient (d) R JA 28 C/ Junction to case (e) R JC 4.69 C/ NOTES: (a) For a device surface mounted on 5mm x 5mm x.6mm FR4 PCB with high coverage of single sided oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x.6mm FR4 PCB with high coverage of single sided oz copper, in still air conditions. (c) Mounted on 5mm x 5mm x.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t< seconds. (e) Junction to case (collector tab). Typical Issue - February 28 2 www.zetex.com
Thermal characteristics - V CE(sat) Limited DC s ms m ms ms µs see note (c) m m -V CE Collector-Emitter Voltage (V) Safe Operating Area Max Power Dissipation () 2.4 2..6.2.8.4 see note (c) see note (b) see note (a). 2 4 6 8 2 4 6 Temperature ( C) Derating Curve Issue - February 28 3 www.zetex.com
Thermal characteristics Thermal Resistance ( C/) 2 8 6 see note (a) D=.5 4 D=.2 2 D=.5 D=. µ m m m k Pulse idth (s) Transient Thermal Impedance Maximum Power () see note (a) µ m m m k Pulse idth (s) Pulse Power Dissipation Thermal Resistance ( C/) Thermal Resistance ( C/) 7 6 5 4 3 2 D=.2 D=.5 D=. µ m m m k 5 4 3 2 see note (b) D=.5 Pulse idth (s) Transient Thermal Impedance see note (c) D=.5 D=.2 D=.5 D=. µ m m m k Pulse idth (s) Transient Thermal Impedance Maximum Power () Maximum Power () µ m m m k see note (b) Pulse idth (s) Pulse Power Dissipation see note (c) µ m m m k Pulse idth (s) Pulse Power Dissipation Issue - February 28 4 www.zetex.com
Electrical characteristics (at = 25 C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-Base breakdown BV CBO -6 - V = -µa voltage Collector-Emitter BV CEO -6-9 V = -ma (*) breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current BV ECX -7-8.4 V I E = -µa, R BC < kω or.25v > V BC > -.25V BV ECO -7-8.8 V I E = -µa BV EBO -7-8.4 V I E = -µa BO < -5 -.5 NOTES: (*) Measured under pulsed conditions. Pulse width 3µs; duty cycle 2%. na µa V CB = -6V V CB = -6V, = C Emitter cut-off current I EBO < -5 na V EB = -5.6V Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio V CE(sat) -62-5 -5-5 -45-24 -8-25 -75-65 -2-4 = -A, I B = -ma (*) = -A, I B = -2mA (*) = -2A, I B = -4mA (*) = -2A, I B = -2mA (*) = -3A, I B = -3mA (*) = -4.5A, I B = -45mA (*) V BE(sat) -965-5 = -4.5A, I B = -45mA (*) V BE(on) -875 - = -4.5A, V CE = -2V (*) h FE 2 6 25 33 26 45 5 = -ma, V CE = -2V (*) = -A, V CE = -2V (*) = -4.5A, V CE = -2V (*) Transition frequency f T 8 MHz = -5mA, V CE = -V f = 5MHz Input capacitance C ibo 28 4 pf V EB = -.5V, f = MHz(*) Output capacitance C obo 29.5 4 pf V CB = -V, f = MHz(*) Delay time t d 24.3 ns Rise time t r 3.2 ns Storage time t s 456 ns Fall time t f 68.2 ns = -5mA, V CC = -V, I B = -I B2 = -5mA Issue - February 28 5 www.zetex.com
Typical characteristics - V CE(SAT) (V) Normalised Gain m Tamb =5 = m = m m m - V CE(SAT) v V.6 CE =2V 6 5 C.4 5.2 C 4..8 25 C 3.6 2.4-55 C.2. m m m - h FE v =2 Typical Gain (hfe) - V CE(SAT) (V) - V BE(SAT) (V).3.2. -55 C. m m.2..8.6.4 = = 5 C C - V CE(SAT) v -55 C 25 C C.2 m m m V BE(SAT) v 5 C - 25 C - V BE(ON) (V)..8.6 V CE =2V -55 C 25 C.4 5 C C.2 m m m - V BE(ON) v Capacitance (pf) 4 35 Cibo f = MHz 3 25 2 5 Cobo 5 m m - Voltage(V) Capacitance v Voltage Issue - February 28 6 www.zetex.com
Package outline - SOT89 D A D C H E E L B e B e DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A.4.6.55.63 E 2.29 2.6.9.2 B.44.56.7.22 E 2.3 2.29.84.9 B.36.48.4.9 e.5 BSC.59 BSC C.35.44.4.7 e 3. BSC.8 BSC D 4.4 4.6.73.8 H 3.94 4.25.55.67 D.52.83.64.72 L.89.2.35.47 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue - February 28 7 www.zetex.com
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