Product description The is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness: dbm maximum RF input power,.5 kv HBM ESD hardness High transition frequency f T = 85 GHz to enable best in class noise performance at high frequencies: NF min =.75 db at 5.5 GHz,.8 V, 5 ma High gain G ms = 3 db at 5.5 GHz,.8 V, ma OIP 3 = dbm at 5.5 GHz,.8 V, ma Suitable for low voltage applications e.g. V CC =. V and.8 V (.85 V, 3.3 V, 3.6 V require a corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47//. Potential applications WLAN, WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Device information Table Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel / H637XTSA TSFP-4- = B = E 3 = C 4 = E T8s 3 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v. www.infineon.com
Table of contents Table of contents Product description.................................................................... Feature list............................................................................. Product validation..................................................................... Potential applications.................................................................. Device information..................................................................... Table of contents....................................................................... Absolute maximum ratings..............................................................3 Thermal characteristics................................................................. 4 3................................................................ 5 3. DC characteristics....................................................................... 5 3. General AC characteristics................................................................ 5 3.3 Frequency dependent AC characteristics...................................................6 3.4 Characteristic DC diagrams.............................................................. 3.5 Characteristic AC diagrams.............................................................. 3 4 Package information TSFP-4-......................................................... Revision history....................................................................... Disclaimer............................................................................ Datasheet v.
Absolute maximum ratings Absolute maximum ratings Table Absolute maximum ratings at T A = 5 C (unless otherwise specified) Min. Max. Collector emitter voltage V CEO.5 V Open base. T A = -55 C, open base Collector base voltage ) V CBO.9 Open emitter.6 T A = -55 C, open emitter Collector emitter voltage ) V CES.5 E-B short circuited. T A = -55 C, E-B short circuited Base current I B -5 3 ma Collector current 35 RF input power P RFin dbm ESD stress pulse V ESD -.5.5 kv HBM, all pins, acc. to JESD-A4 Total power dissipation 3) P tot 75 mw T S 9 C Junction temperature T J 5 C Storage temperature T Stg -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. V CBO is similar to V CEO due to design. V CES is similar to V CEO due to design. 3 T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v.
Thermal characteristics Thermal characteristics Table 3 Thermal resistance Junction - soldering point R thjs 54 K/W 8 7 6 Ptot [mw] 5 4 3 Figure Total power dissipation P tot = f(t S ) 5 5 75 5 5 T S [ C] Datasheet 4 v.
3 3. DC characteristics Table 4 DC characteristics at T A = 5 C Collector emitter breakdown voltage V (BR)CEO.5.6 V = ma, I B =, open base Collector emitter leakage current ES 4 ) na V CE =.5 V, V BE =, E-B short circuited Collector base leakage current BO 4 ) V CB =.5 V, I E =, open emitter Emitter base leakage current I EBO ) μa V EB =.5 V, =, open collector DC current gain h FE 5 6 45 V CE =.8 V, = ma, pulse measured 3. General AC characteristics Table 5 General AC characteristics at T A = 5 C Transition frequency f T 85 GHz V CE =.8 V, = 5 ma, f = GHz Collector base capacitance C CB 38 ff V CB =.8 V, V BE =, f = MHz, emitter grounded Collector emitter capacitance C CE.37 pf V CE =.8 V, V BE =, f = MHz, base grounded Emitter base capacitance C EB.37 V EB =.4 V, V CB =, f = MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the % test Datasheet 5 v.
3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T s in a 5 Ω system, T A = 5 C. Top View VC Bias-T OUT E C VB IN Bias-T B (Pin ) E Figure Testing circuit Table 6 AC characteristics, V CE =.8 V, f =.45 GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output G ms S 35 8 NF min.55 G ass 7 OIP 3 9.5 OP db 4 db db dbm = ma = 5 ma Z S = Z L = 5 Ω, = ma Datasheet 6 v.
Table 7 AC characteristics, V CE =.8 V, f =.9 GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output Table 8 G ms S 3 7 NF min.6 G ass 6.5 OIP 3 9.5 OP db 4 AC characteristics, V CE =.8 V, f =.5 GHz db db dbm = ma = 5 ma Z S = Z L = 5 Ω, = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output Table 9 G ms S 8.5 6 NF min.6 G ass 5 OIP 3 OP db 4 AC characteristics, V CE =.8 V, f =.9 GHz db db dbm = ma = 5 ma Z S = Z L = 5 Ω, = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output G ms S 7.5 5.5 NF min.65 G ass 4 OIP 3 OP db 4.5 db db dbm = ma = 5 ma Z S = Z L = 5 Ω, = ma Datasheet 7 v.
Table AC characteristics, V CE =.8 V, f =.4 GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output Table G ms S 6.5 4 NF min.65 G ass.5 OIP 3 OP db 4 AC characteristics, V CE =.8 V, f = 3.5 GHz db db dbm = ma = 5 ma Z S = Z L = 5 Ω, = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output Table G ms S 5 NF min.7 G ass.5 OIP 3.5 OP db 5 AC characteristics, V CE =.8 V, f = 5.5 GHz db db dbm = ma = 5 ma Z S = Z L = 5 Ω, = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output G ms S 3 9 NF min.75 G ass 7.5 OIP 3 OP db 5 db db dbm = ma = 5 ma Z S = Z L = 5 Ω, = ma Datasheet 8 v.
Table 3 AC characteristics, V CE =.8 V, f = GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output Table 4 G ma S 6 3 NF min. G ass 3 OIP 3 9.5 OP db 3 AC characteristics, V CE =.8 V, f = GHz db db dbm = ma = 5 ma Z S = Z L = 5 Ω, = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output G ma S 5.5.5 NF min.3 G ass.5 OIP 3 8.5 OP db.5 db db dbm = ma = 5 ma Z S = Z L = 5 Ω, = ma Note: G ms = IS / S I for k < ; G ma = IS / S I(k-(k -) / ) for k >. In order to get the NF min values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP 3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 5 Ω from. MHz to GHz. Datasheet 9 v.
3.4 Characteristic DC diagrams [ma] 8 6 4 8 6 I B = 7µA I B = 6µA I B = 5µA I = 4µA B I B = 3µA I B = µa 4 I B = µa.5.5.5 3 V CE [V] Figure 3 Collector current vs. collector emitter voltage = f(v CE ), I B = parameter 3 h FE [ma] Figure 4 DC current gain h FE = f( ), V CE =.8 V Datasheet v.
[ma] 3 4 5.5.6.7.8.9 V BE [V] Figure 5 Collector current vs. base emitter forward voltage = f(v BE ), V CE =.8 V I B [ma] 3 4 5 6 7.5.6.7.8.9 V B [V] Figure 6 Base current vs. base emitter forward voltage I B = f(v BE ), V CE =.8 V Datasheet v.
6 7 8 I B [ A ] 9.3.4.5.6.7 V [ V ] EB Figure 7 Base current vs. base emitter reverse voltage I B = f(v EB ), V CE =.8 V Datasheet v.
3.5 Characteristic AC diagrams f T [GHz] 85 8 75 7 65 6 55 5 45 4 35 3 5 5 5.V.8V.5V.V.5V 5 5 5 3 35 4 45 [ma] Figure 8 Transition frequency f T = f( ), f = GHz, V CE = parameter 5 OIP3 [dbm] 5 5.5V, 4MHz.8V, 4MHz.5V, 55MHz.8V, 55MHz 5 5 5 3 [ma] Figure 9 3rd order intercept point at output OIP 3 = f( ), Z S = Z L = 5 Ω, V CE, f = parameter Datasheet 3 v.
[ma] 5 5 4 56 7 8 9 9 3 4 55 3 4 6 66 8 9 77 8 7 8 9 9 8 9 9 9 5 9..4.6.8 V CE [V] Figure 3rd order intercept point at output OIP 3 [dbm] = f(, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz [ma] 5 5 6 5 4 3 3 3 4 5 4 4 5 5 6 7 6 7 6 3 3 4 5 3 5..4.6.8 V CE [V] 4 6 5 Figure Compression point at output OP db [dbm] = f(, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz Datasheet 4 v.
.5.45 C CB [pf].4.35.3..4.6.8..4.6.8 V CB [V] Figure Collector base capacitance C CB = f(v CB ), f = MHz 4 35 3 G [db] 5 5 G ms S G ma 5 3 4 5 6 7 8 9 f [GHz] Figure 3 Gain G ma, G ms, IS I = f(f), V CE =.8 V, = ma Datasheet 5 v.
4 G max [db] 35 3 5.45GHz.9GHz.5GHz.9GHz.4GHz 3.5GHz 5.5GHz 5.GHz.GHz 5 5 5 3 35 4 45 [ma] Figure 4 Maximum power gain G max = f( ), V CE =.8 V, f = parameter in GHz G max [db] 39 36 33 3 7 4 8 5.45GHz.9GHz.5GHz.9GHz.4GHz 3.5GHz 5.5GHz GHz GHz 9.5.5.5 V CE [V] Figure 5 Maximum power gain G max = f(v CE ), = ma, f = parameter in GHz Datasheet 6 v.
.5.5...4.3...... 9..3 to GHz 8. 9... 7..3.4.5.5 3 4 5 8. 6..3 3 4 5.3. 7. 5. 4...3.4.5 6. 5. 3. 4.. 3... 5. 4 3 5.mA ma 5mA.5 Figure 6 Input reflection coefficient S = f(f), V CE =.8 V, = 5 / / 5 ma.5.5....3.4 5.5 3.5.4.9 5.5.5.9 8..5...3.4.5 3.5.4 5.5.5.5 3 4 5 8..5.. 3 4 5... 5 4.3.4.5.5 3 5mA ma 5mA Figure 7 Source impedance for minimum noise figure Z S,opt = f(f), V CE =.8 V, = 5 / / 5 ma Datasheet 7 v.
.5.5.....3...3.4.5.5 3 4 5 9..3.4.4.5... 9.. 8. 7.. 6.. 8. 7. 6. 5. 4. 5. 4. 3..3 to GHz 3.... 3 4 5.3. 5 4 3 5.mA ma 5mA.5 Figure 8 Output reflection coefficient S = f(f), V CE =.8 V, = 5 / / 5 ma.8.6.4 NF min [db]..8.6.4 = 5mA. I = ma C = 5mA 4 6 8 f [GHz] Figure 9 Noise figure NF min = f(f), V CE =.8 V, Z S = Z S,opt, = 5 / / 5 ma Datasheet 8 v.
. NF min [db].8.6.4..8.6.4. f = GHz f = GHz f = 5.5GHz f = 3.5GHz f =.4GHz f =.9GHz 5 5 [ma] Figure Noise figure NF min = f( ), V CE =.8 V, Z S = Z S,opt, f = parameter in GHz NF 5 [db] 3.6 3.4 3. 3.8.6.4. f = GHz f = GHz f = 5.5GHz f = 3.5GHz f =.4GHz f =.9GHz.8.6.4..8.6.4. 5 5 [ma] Figure Note: Noise figure NF 5 = f( ), V CE =.8 V, Z S = 5 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T A = 5 C. Datasheet 9 v.
Package information TSFP-4-4 Package information TSFP-4- Figure Package outline Figure 3 Foot print Figure 4 Marking layout example Figure 5 Tape dimensions Datasheet v.
Revision history Revision history Document version Date of release Description of changes. New datasheet layout. Datasheet v.
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