15A, V,.38 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck Converter High Speed Switching Features August 23 Low Gate Charge Q g results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness Reduced r DS(ON) Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI 175 C Rated Junction Temperature Package SOURCE GATE GATE SOURCE (FLANGE) (FLANGE) Symbol G D (BOTTOM) TO-247 FDH SERIES TO-263AB FDB SERIES TO-22AB FDP SERIES SOURCE GATE S Absolute Maximum Ratings T C = 25 o C unless otherwise noted Symbol Parameter Ratings Units S Drain to Source Voltage V Gate to Source Voltage ±3 V Drain Current I D Continuous (T C = 25 o C, = V) 15 A Continuous (T C = o C, = V) 11 A Pulsed 1 6 A P D Power dissipation Derate above 25 o C T J, T STG Operating and Storage Temperature -55 to 175 Soldering Temperature for seconds 3 (1.6mm from case) Thermal Characteristics 3 2 W W/ o C o C o C R θjc Thermal Resistance Junction to Case. o C/W R θja Thermal Resistance Junction to Ambient (TO-247) 4 o C/W R θja Thermal Resistance Junction to Ambient (TO-22, TO-263) 62 o C/W 23 Fairchild Semiconductor Corporation RevD2
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDH15N FDH15N TO-247 Tube - 3 FDP15N FDP15N TO-22 Tube - FDB15N FDB15N TO-263 33mm 24mm 8 Electrical Characteristics T J = 25 C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units Statics B VDSS Drain to Source Breakdown Voltage I D = 2µA, = V - - V B VDSS / T J Breakdown Voltage Temp. Coefficient Reference to 25 o C, ID = 1mA -.58 - V/ C r DS(ON) Drain to Source On-Resistance = V, I D = 7.5A -.33.38 Ω (th) Gate Threshold Voltage =, I D = 2µA 2. 3.4 4. V V I DSS Zero Gate Voltage Drain Current DS = V T C = 25 o C - - 25 µa = V T C = 1 o C - - 2 I GSS Gate to Source Leakage Current = ±3V - - ± na Dynamics g fs Forward Transconductance = V, I D = 7.5A - - S Q g(tot) Total Gate Charge at V = V, - 33 41 nc Q gs Gate to Source Gate Charge = 4V, - 7.2 nc Q gd Gate to Drain Miller Charge I D = 15A - 12 16 nc t d(on) Turn-On Delay Time = 2V, - 9 - ns t r Rise Time I D = 15A, - 5.4 - ns t d(off) Turn-Off Delay Time R G = 6.2Ω, - 26 - ns t f Fall Time R D = 17Ω - 5 - ns C ISS Input Capacitance - 18 - pf = 25V, = V, C OSS Output Capacitance - 23 - pf f = 1MHz C RSS Reverse Transfer Capacitance - 16 - pf Avalanche Characteristics E AS Single Pulse Avalanche Energy 2 76 - - mj I AR Avalanche Current - - 15 A Drain-Source Diode Characteristics Continuous Source Current I S (Body Diode) Pulsed Source Current 1 I SM (Body Diode) Notes: 1: Repetitive rating; pulse width limited by maximum junction temperature 2: Starting T J = 25 C, L = 7.mH, I AS = 15A MOSFET symbol showing the integral reverse p-n junction diode. - - 15 A - - 6 A V SD Source to Drain Diode Voltage I SD = 15A -.86 1.2 V t rr Reverse Recovery Time I SD = 15A, di SD /dt = A/µs - 47 73 ns Q RR Reverse Recovered Charge I SD = 15A, di SD /dt = A/µs - 5 6.6 µc G D S 23 Fairchild Semiconductor Corporation RevD2
Typical Characteristics I D, TO SOURCE CURRENT (A) T J = 25 o C DESCENDING V 6.5V 6V 5.5V 5V 4.5V 1 1, TO SOURCE VOLTAGE (V) Figure 1. Output Characteristics I D, TO SOURCE CURRENT (A) T J = 175 o C DESCENDING V 6V 5.5V 5V 4.5V 4V 1 1, TO SOURCE VOLTAGE (V) Figure 2. Output Characteristics I D, CURRENT (A) 6 VDD = V 4 3 2 TJ = 175 o C TJ = 25 o C NORMALIZED ON RESISTANCE 3.5 3. 2.5 2. 1.5 1..5 = V, I D = 7.5A 3. 3.5 4. 4.5 5. 5.5 6. 6.5, GATE TO SOURCE VOLTAGE (V) Figure 3. Transfer Characteristics - -25 25 75 125 1 175 TJ, JUNCTION TEMPERATURE ( o C) Figure 4. Normalized Drain To Source On Resistance vs Junction Temperature C, CAPACITANCE (pf) 4 C ISS C OSS C RSS = V, f = 1MHz 1, GATE TO SOURCE VOLTAGE (V) 15 I D = 15A 12 V 2V 9 4V 6 3 2 3 4, TO SOURCE VOLTAGE (V) Figure 5. Capacitance vs Drain To Source Voltage Qg, GATE CHARGE (nc) Figure 6. Gate Charge Waveforms For Constant Gate Current 23 Fairchild Semiconductor Corporation RevD2
Typical Characteristics I SD, SOURCE TO CURRENT (A) 3 25 2 15 5 T J = 175 o C T J = 25 o C.3.4.5.6.7.8.9 1. V SD, SOURCE TO VOLTAGE (V) Figure 7. Body Diode Forward Voltage vs Body Diode Current I D, CURRENT (A) T C = 25 o C µs 1ms 1. ms OPERATION IN THIS AREA DC LIMITED BY R DS(ON).1 1, TO SOURCE VOLTAGE (V) Figure 8. Maximum Safe Operating Area I D, CURRENT (A) 16 12 8 4 I AS, AVALANCHE CURRENT (A) If R = t AV = (L)(I AS )/(1.3*RATED BS - ) If R t AV = (L/R)ln[(I AS *R)/(1.3*RATED BS - ) +1] STARTING T J = 1 o C STARTING T J = 25 o C 25 75 125 1 175 T C, CASE TEMPERATURE ( o C) Figure 9. Maximum Drain Current vs Case Temperature 1.1.1 1 t AV, TIME IN AVALANCHE (ms) Figure. Unclamped Inductive Switching Capability Z θjc, NORMALIZED THERMAL RESPONSE -1..2..5.2 DUTY FACTOR, D = t 1 / t 2 PEAK T J = (PD X Z θjc X R θjc ) + T C.1 SINGLE PULSE -2-5 -4-3 -2-1 1 P D t 1 t 2 t 1, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Transient Thermal Impedance, Junction to Case 23 Fairchild Semiconductor Corporation RevD2
Test Circuits and Waveforms L VARY t P TO OBTAIN + REQUIRED PEAK I AS R G - DUT t P V I AS.1Ω Figure 12. Unclamped Energy Test Circuit BS t P I AS t AV Figure 13. Unclamped Energy Waveforms Q g(tot) R L = V + - DUT = 1V I g(ref) Q g(th) Q gs Q gd I g(ref) Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms t ON t OFF t d(on) t d(off) R L t r t f 9% 9% + - % % R GS DUT 9% % % PULSE WIDTH % Figure 16. Switching Time Test Circuit Figure 17. Switching Time Waveform 23 Fairchild Semiconductor Corporation RevD2
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