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SOT227 PRODUCT SUMMARY V DSS I D DC R DS(on) Type Package V 90 A 0.0065 Modules MOSFET SOT227 FEATURES Fully isolated package Very low onresistance Fully avalanche rated Dynamic dv/dt rating Low drain to case capacitance Low internal inductance Optimized for SMPS applications Easy to use and parallel Industry standard outline Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level DESCRIPTION High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low onresistance and cost effectiveness. The isolated SOT227 package is preferred for all commercialindustrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS T C = 40 C 90 Continuous drain current at V GS V I D T C = C 30 A Pulsed drain current I DM 720 Power dissipation P D T C = 25 C 568 W Linear derating factor 2.7 W/ C Gate to source voltage V GS ± 20 V Single pulse avalanche energy E (2) AS 700 mj Avalanche current I () AR 80 A Repetitive avalanche energy E () AR 48 mj Peak diode recovery dv/dt dv/dt (3) 5.7 V/ns Operating junction and storage temperature range T J, T Stg 55 to 50 C Insulation withstand voltage (ACRMS) V ISO 2.5 kv Mounting torque M4 screw.3 Nm Notes () Repetitive rating; pulse width limited by maximum junction temperature. (2) Starting T J = 25 C, L = 43 μh, R g = 25, I AS = 80 A. (3) I SD 80 A, di/dt 83 A/μs, V DD V (BR)DSS, T J 50 C. Document Number: 93459 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 2Apr
THERMAL RESISTANCE PARAMETER SYMBOL MIN. TYP. MAX. UNITS Junction to case R thjc 0.22 Case to heatsink, flat, greased surface R thcs 0.05 C/W ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain to source breakdown voltage V (BR)DSS V GS = 0 V, I D = 250 μa V Breakdown voltage temperature coefficient V (BR)DSS / T J Reference to 25 C, I D = ma 0.093 V/ C Static drain to source onresistance R DS(on) V GS = V, I D = 80 A 0.0054 0.0065 Gate threshold voltage V GS(th) V DS = V GS, I D = 250 μa 2.0 3.3 4.35 V Forward transconductance g fs V DS = 25 V, I D = 80 A 93 S V DS = V, V GS = 0 V 50 Drain to source leakage current I DSS V DS = 80 V, V GS = 0 V, T J = 25 C 500 μa V GS = 20 V 200 Gate to source forward leakage I GSS V GS = 20 V 200 na Total gate charge Q g ID = 80 A 250 Gate to source charge Q gs V DS = 80 V 40 nc Gate to drain ("Miller") charge Q gd V GS = V Turnon delay time t d(on) V DD = 50 V 45 Rise time t r I D = 80 A 35 Turnoff delay time t d(off) R g = 2.0 (internal) 8 ns Fall time t f R D = 0.27 335 Internal source inductance L S Between lead, and center of die contact 5.0 nh Input capacitance C iss VGS = 0 V 700 Output capacitance C oss V DS = 25 V 2800 pf Reverse transfer capacitance C rss f =.0 MHz 300 SOURCEDRAIN RATINGS AND CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Continuous source current (body diode) I S MOSFET symbol showing the integral reverse pn junction diode. 90 Pulsed source current (body diode) I SM 740 Diode forward voltage V SD T J = 25 C, I S = 80 A, V GS = 0 V.0.3 V Reverse recovery time t rr T J = 25 C, I F = 80 A, di/dt = A/μs 300 ns Reverse recovery charge Q rr 2.6 μc Forward turnon time t on Intrinsic turnon time is negligible (turnon is dominated by L S L D ) G D S A www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93459 2 Revision: 2Apr
I D, DraintoSource Current (A) 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics R DS(on), DraintoSource On Resistance (Normalized) 2.5 I D = 80A 2.0.5.0 0.5 V GS = V 0.0 60 40 20 0 20 40 60 80 20 40 60 T J, Junction Temperature( C) Fig. 4 Normalized OnResistance vs. Temperature I D, DraintoSource Current (A) 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V C, Capacitance (pf) 20000 5000 00 5000 VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds Crss = Cgd Coss = Cds Cgd C iss C oss C rss SHORTED 20μs PULSE WIDTH T J = 50 C 0. V DS, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics 0 V DS, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. Drain to Source Voltage I D, DraintoSource Current (A) 0 T J = 50 C T J = 25 C V DS = 25V 20µs PULSE WIDTH 4 5 6 7 8 9 V GS, GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics V GS, GatetoSource Voltage (V) 20 5 5 I = D 80 A V DS = 80V V DS = 50V V DS = 20V FOR TEST CIRCUIT SEE FIGURE 3 0 0 50 50 200 250 300 350 400 Q G, Total Gate Charge (nc) Fig. 6 Typical Gate Charge vs. Gate to Source Voltage Document Number: 93459 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 2Apr 3
0 75 I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C Allowable Case Temperature ( C) 50 25 75 50 DC V GS = 0 V 0. 0.2 0.6.0.4.8 V SD,SourcetoDrain Voltage (V) Fig. 7 Typical Source Drain Diode Forward Voltage 25 0 25 50 75 25 50 75 200 I D, Drain Current in DC (A) Fig. 9 Maximum Drain Current vs. Case Temperature 00 OPERATION IN THIS AREA LIMITED BY R DS(on) I D, Drain Current (A) 0 us us ms ms TC = 25 C TJ = 50 C Single Pulse 0 V DS, DraintoSource Voltage (V) Fig. 8 Maximum Safe Operating Area R G V GS V V DS Pulse width µs Duty factor 0. % R D D.U.T. Fig. a Switching Time Test Circuit V DD V DS 90% % V GS t d(on) t r t d(off) t f Fig. b Switching Time Waveforms www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93459 4 Revision: 2Apr
ZthJC Thermal Impedance ( C/W) 0. 0.75 0.5 0.3 0.2 0. DC Single pulse (thermal resistance) 0.0 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (s) Fig. Maximum Effective Transient Thermal Impedance, Junction to Case R G V DS 20 V t p L D.U.T I AS 0.0 Ω 5 V Driver Fig. 2a Unclamped Inductive Test Circuit V DD A E AS, Single Pulse Avalanche Energy (mj) 500 200 900 600 300 I D TOP 7A A BOTTOM 60A 0 25 50 75 25 50 Starting T, Junction Temperature( J C) Fig. 2c Maximum Avalanche Energy vs. Drain Current V (BR)DSS tp Q G V Q GS Q GD V G I AS Fig. 2b Unclamped Inductive Waveforms Charge Fig. 3a Basic Gate Charge Waveform Document Number: 93459 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 2Apr 5
Current regulator Same type as D.U.T. 2 V 0.2 µf 50 kω 0.3 µf D.U.T. V DS V GS 3 ma I G I D Current sampling resistors Fig. 3b Gate Charge Test Circuit D.U.T. 3 Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer 2 4 R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by duty factor "D" D.U.T. Device under test V DD Fig. 3c Peak Diode Recovery dv/dt Test Circuit Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReApplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig. 4 For NChannel Power MOSFETs www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93459 6 Revision: 2Apr
ORDERING INFORMATION TABLE Device code VS F B 90 S A 2 3 4 5 6 7 product 2 Power MOSFET 3 Generation 5 MOSFET 4 Current rating (90 = 90 A) 5 Single switch 6 Package indicator (SOT227) 7 Voltage rating ( = V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D(3) 3 (D) 2 (G) G(2) S(4) Single switch S Lead Assignment (S) (D) 4 3 2 4 (S) (S) (S) (G) Dimensions Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95423 www.vishay.com/doc?95425 Document Number: 93459 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 2Apr 7
Outline Dimensions SOT227 Generation II DIMENSIONS in millimeters (inches) Ø 4. (0.6) Ø 4.30 (0.69) 38.30 (.508) 37.80 (.488) A 4 x M4 nuts 2.50 (0.492) 3.00 (0.52) 6.25 (0.246) 6.50 (0.256) 25.70 (.02) 24.70 (0.972) B 7.45 (0.293) 7.60 (0.299) 30.50 (.200) 29.80 (.73) 4.90 (0.587) 5.20 (0.598) R full 2. (0.083) 2.20 (0.087) 3.50 (.240) 32. (.264) 8.30 (0.327) 4 x 7.70 (0.303) 0.25 (0.0) M C A M B M 2.20 (0.087).90 (0.075) 4. (0.6) 4.50 (0.77) C 0.3 (0.005) 2.30 (0.484).70 (0.460) 25.00 (0.984) 25.50 (.004) Note Controlling dimension: millimeter Document Number: 95423 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 5Nov
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