PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch for 12V (typical) bus Features and Benefits Features Resulting Benefits Low R DSon ( 1.20mΩ) Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W) Enable better thermal dissipation Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Form Quantity IRFH6200TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH6200TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Note Absolute Maximum Ratings V DS V GS Parameter Drain-to-Source Voltage Gate-to-Source Voltage I D @ T A = 25 C Continuous Drain Current, V GS @ 4.5V I D @ T A = 70 C Continuous Drain Current, V GS @ 4.5V I D @ T C(Bottom) = 25 C Continuous Drain Current, V GS @ 4.5V I D @ T C(Bottom) = C Continuous Drain Current, V GS @ 4.5V I DM Pulsed Drain Current c P D @T A = 25 C Power Dissipation g P D @T C(Bottom) = 25 C Power Dissipation g Linear Derating Factor g T J Operating Junction and T STG Storage Temperature Range Max. 20 ±12 45 36 400 3.6 250 0.029-55 to 150 Units V A W W/ C C Notes through are on page 8 www.irf.com 1 09/7/20
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 20 V V GS = 0V, I D = 250µA ΒV DSS / T J Breakdown Voltage Temp. Coefficient 6.4 mv/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 0.80 1.20 V GS = 4.5V, I D = 50A e mω 1. 1.50 V GS = 2.5V, I D = 50A e V GS(th) Gate Threshold Voltage 0.5 0.8 1.1 V V DS = V GS, I D = 150µA V GS(th) Gate Threshold Voltage Coefficient -6.6 mv/ C I DSS Drain-to-Source Leakage Current 1.0 V DS = 16V, V GS = 0V µa 150 V DS = 16V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage V GS = 12V na Gate-to-Source Reverse Leakage - V GS = -12V gfs Forward Transconductance 260 S V DS = V, I D = 50A Q g Total Gate Charge 155 230 V DS = V Q gs Gate-to-Source Charge 22 nc V GS = 4.5V Q gd Gate-to-Drain Charge 53 I D = 50A (See Fig.17 & 18) R G Gate Resistance 1.3 Ω t d(on) Turn-On Delay Time 14 V DD = V, V GS = 4.5V t r Rise Time 74 I D = 50A ns t d(off) Turn-Off Delay Time 140 R G =1.0Ω t f Fall Time 160 See Fig.15 C iss Input Capacitance 890 V GS = 0V C oss Output Capacitance 2890 pf V DS = V C rss Reverse Transfer Capacitance 2180 ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy d 780 mj I AR Avalanche Current c 30 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 400 (Body Diode)c p-n junction diode. V SD Diode Forward Voltage 1.2 V T J = 25 C, I S = 50A, V GS = 0V e t rr Reverse Recovery Time 86 130 ns T J = 25 C, I F = 50A, V DD = V Q rr Reverse Recovery Charge 350 525 nc di/dt = 260A/µs e t on Forward Turn-On Time Time is dominated by parasitic Inductance Thermal Resistance Parameter Typ. Max. Units R θjc (Bottom) Junction-to-Case f 0.5 R θjc (Top) Junction-to-Case f 15 C/W R θja Junction-to-Ambient g 35 R θja (<s) Junction-to-Ambient g 22 D S 2 www.irf.com
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) 0 VGS TOP V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V BOTTOM 1.3V 0 VGS TOP V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V BOTTOM 1.3V 1.3V 60µs PULSE WIDTH Tj = 25 C 1 0.1 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.3V 60µs PULSE WIDTH Tj = 150 C 0.1 1 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 0 1.6 1.4 I D = 50A V GS = 4.5V T J = 175 C 1.2 T J = 25 C 1.0 V DS = V 60µs PULSE WIDTH 1.0 0.5 1.0 1.5 2.0 2.5 V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 0.8 0.6-60 -40-20 0 20 40 60 80 120 140 160 T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 000 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 14.0 12.0.0 I D = 50A V DS = 16V V DS = V 00 C iss C oss 8.0 6.0 C rss 4.0 2.0 0 0.0 1 0 200 300 400 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs.drain-to-source Voltage Fig 6. Typical Gate Charge vs.gate-to-source Voltage www.irf.com 3
V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) 0 0 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 150 C 1msec µsec msec T J = 25 C V GS = 0V 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 400 1 1.6 Tc = 25 C Tj = 150 C Single Pulse DC 0 1 V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 1.4 300 Limited By Package 1.2 1.0 200 0.8 0.6 I D = 150µA 0.4 I D = 500µA I D = 1.0mA 0.2 I D = 1.0A 0 25 50 75 125 150 T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature 0.0-75 -50-25 0 25 50 75 125 150 T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature 1 D = 0.50 0.1 0.01 0.20 0. 0.05 0.02 0.01 Thermal Response ( Z thjc ) C/W 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com
R DS(on), Drain-to -Source On Resistance (m Ω) E AS, Single Pulse Avalanche Energy (mj) 4 3 I D = 50A 3500 3000 2500 I D TOP 19A 21A BOTTOM 30A 2 T J = 125 C 2000 1500 1 0 T J = 25 C 500 0 0 2 4 6 8 12 V GS, Gate -to -Source Voltage (V) 0 25 50 75 125 150 Starting T J, Junction Temperature ( C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V (BR)DSS 15V tp V DS L DRIVER R G 20V tp D.U.T IAS 0.01Ω - V DD A I AS Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms R G V GS V DS R D D.U.T. - V DD V DS 90% VV GS Pulse Width 1 µs Duty Factor 0.1 % V GS t d(on) t r t d(off) t f Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms www.irf.com 5
- D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Vds Id Vgs 0 1K DUT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform 6 www.irf.com
PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ( 4 or 5 digits ) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7
PQFN 5x6 Outline "B" Tape and Reel Qualification information Qualification level Industrial (per JEDEC JES D47F guidelines ) Moisture Sensitivity Level RoHS compliant PQFN 5mm x 6mm MS L1 (per JEDE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 1.7mH, R G = 25Ω, I AS = 30A. ƒ Pulse width 400µs; duty cycle 2%. R θ is measured at T J of approximately 90 C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.09/20 8 www.irf.com