N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S TO-220FB-3L G D S TO-263-2L Applications Switching application D Power Management for Inverter Systems. G N-Channel MOSFET Ordering and Marking Information S P HY4004 YYXXXJWW ÿ G B HY4004 ÿ YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 00% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 4050
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 40 V GSS Gate-Source Voltage ±20 T J Maximum Junction Temperature 75 C T STG Storage Temperature Range -55 to 75 C I S Diode Continuous Forward Current T C =25 C 208 A Mounted on Large Heat Sink I DM Pulsed Drain Current * T C =25 C 750** A I D P D Continuous Drain Current Maximum Power Dissipation T C =25 C 208 T C =00 C 38 T C =25 C 27 T C =00 C 08 R θjc Thermal Resistance-Junction to Case 0.69 R θja Thermal Resistance-Junction to Ambient 62.5 Avalanche Ratings E AS Avalanche Energy, Single Pulsed L=0.5mH.4*** J Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=32V Electrical Characteristics (T C = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics HY4004 Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µA 40 - - V I DSS Zero Gate Voltage Drain Current V DS =40V, V GS =0V - - T J =85 C - - 0 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250µA 2.0 3.0 4.0 V I GSS Gate Leakage Current V GS =±20V, V DS =0V - - ±00 na R DS(ON) * Drain-Source On-state Resistance V GS =0V, I DS =04A - 2.5 3.2 mω Diode Characteristics V SD * Diode Forward Voltage I SD =04 A, V GS =0V - 0.8.2 V t rr Reverse Recovery Time I SD =04A, - 37 - ns Q rr Reverse Recovery Charge V A W C/W Unit dl SD /dt=00a/µs - 60 - nc µa 2
Electrical Characteristics (Cont.) (T C = 25 C Unless Otherwise Noted) HY4004 Symbol Parameter Test Conditions Unit Min. Typ. Max. Dynamic Characteristics R G Gate Resistance V GS =0V,V DS =0V,F=MHz -.0 - Ω C iss Input Capacitance V GS =0V, - 572 - C oss Output Capacitance V DS =25V, - 465 - Reverse Transfer Capacitance Frequency=.0MHz - 596 - C rss t d(on) Turn-on Delay Time - 35 - T r Turn-on Rise Time V DD =20V, R G =6 Ω, - 20 - I DS =04A, V GS =0V, t d(off) Turn-off Delay Time - 45 - T f Turn-off Fall Time - 62 - Gate Charge Characteristics Q g Total Gate Charge - 58 - Q gs Gate-Source Charge V DS =32V, V GS =0V, I DS =04A - 30 - Gate-Drain Charge - 66 - Q gd Note * : Pulse test ; pulse width 300µs, duty cycle 2%. pf ns nc 3
Typical Operating Characteristics Ptot - Power (W) Power Dissipation 275 250 200 50 00 50 T C =25 o C 0 0 20 40 60 80 00 20 40 60 80 200 ID - Drain Current (A) 22 200 Drain Current limited by package 75 50 25 00 75 50 T 25 C =25 o C,V G =0V 0 20 40 60 80 00 20 40 60 80 200 Tc- Temperature ( C) Tc-Case Temperature ( C) Case 000 Safe Operation Area ID - Drain Current (A) 00 0 Rds(on) Limit 00us 0ms ms DC 0. 0 00 VDS - Drain - Source Voltage (V) 400 Thermal Transient Impedance Duty = 0.5 Normalized Effective Transient 0. 0.0 0.00 Single 0.0 0.02 0.05 0. 0.2 Mounted on minimum pad R θja : 62.5 o C/W 0.000 0.000 0.00 0.0 0. 0 Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) ID - Drain Current (A) Output Characteristics 400 V GS = 5.5,6,7,8,9,0V 350 300 250 5V 200 50 00 4.5V 50 4V 0 0.0.0 2.0 3.0 4.0 5.0 6.0 VDS - Drain - Source Voltage (V) RDS(ON) - On - Resistance (mw) Drain-SourceOn Resistance 4.5 4.0 3.5 V GS =0V 3.0 2.5 2.0.5.0 0 50 00 50 200 250 ID - Drain Current (A) Gate-SourceOn Resistance Gate Threshold Voltage 7 I DS =04A.6 I DS =250mA 6.4 RDS(ON) - On - Resistance (mw) 5 4 3 2 Normalized Threshold Voltage.2.0 0.8 0.6 0.4 0 3 4 5 6 7 8 9 0 VGS - Gate - Source Voltage (V) 0.2-50 -25 0 25 50 75 00 25 50 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-SourceOn Resistance Source-Drain Diode Forward 2.0.8 V GS = 0V I DS = 04A 200 00 T j =25 o C NormalizedOn Resistance.6.4.2.0 0.8 0.6 R ON @T j =25 o C: 2.5mW 0.4-50 -25 0 25 50 75 00 25 50 Tj - Junction Temperature ( C) IS - Source Current (A) 0 T j =50 o C 0. 0.0 0.2 0.4 0.6 0.8.0.2.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 2000 0500 Frequency=MHz 0 9 V DS = 32V I DS = 04A C - Capacitance (pf) 9000 7500 6000 4500 3000 500 Crss Coss Ciss VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 0 0 8 6 24 32 40 VDS - Drain - Source Voltage (V) 0 0 40 80 20 60 200 QG - Gate Charge (nc) 6
Avalanche Test Circuit and Waveforms V DS L t p V DSX(SUS) DUT V DS I AS R G V DD V DD tp I L 0.0W E AS t AV Avalanche Test Circuit and Waveforms V DS DUT R D V DS 90% V GS R G V DD 0% tp V GS t d(on) t r t d(off) t f 7
Package Information TO-220FB-3L SYMBOL MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.73 0.80 0.85 A.27.30.33 0.050 0.05 0.052 A2 2.35 2.40 2.50 0.093 0.094 0.098 b 0.77 0.80 0.90 0.030 0.03 0.035 b2.7.27.36 0.046 0.050 0.054 c 0.48 0.50 0.56 0.09 0.020 0.022 D 5.40 5.60 5.80 0.606 0.64 0.622 D 9.00 9.0 9.20 0.354 0.358 0.362 DEP 0.05 0.0 0.20 0.002 0.004 0.008 E 9.80 0.00 0.20 0.386 0.394 0.402 E - 8.70 - - 0.343 - E2 9.80 0.00 0.20 0.386 0.394 0.402 e 2.54 BSC 0.00 BSC e 5.08 BSC 0.200 BSC H 6.40 6.50 6.60 0.252 0.256 0.260 L 2.75 3.50 3.65 0.502 0.53 0.537 L - 3.0 3.30-0.22 0.30 L2 2.50 REF 0.098 REF P 3.50 3.60 3.63 0.38 0.42 0.43 P 3.50 3.60 3.63 0.38 0.42 0.43 Q 2.73 2.80 2.87 0.07 0.0 0.3 θ 5 7 9 5 7 9 θ2 3 5 3 5 θ3 3 5 3 5 8
TO-263-2L SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.73 0.80 0.85 A.22.27.32 0.048 0.050 0.052 A2 2.59 2.69 2.79 0.02 0.06 0.0 A3 0.00 0.0 0.20 0.000 0.004 0.008 b 0.77 0.83 0.90 0.030 0.032 0.035 b.20.270.36 0.047 0.050 0.054 c 0.34 0.38 0.47 0.03 0.05 0.09 D 8.60 8.70 8.80 0.339 0.343 0.346 E 0.00 0.6 0.26 0.394 0.400 0.404 E2 0.00 0.0 0.20 0.394 0.398 0.402 e 2.54 BSC 0.00 BSC H 4.70 5.0 5.50 0.579 0.594 0.60 H2.7.27.40 0.046 0.050 0.055 L 2.00 2.30 2.60 0.079 0.09 0.02 L.45.55.70 0.057 0.06 0.067 L2 2.50 REF 0.098 REF L4 0.25 BSC 0.00 BSC 0 5 8 0 5 8 5 7 9 5 7 9 2 3 5 3 5 ΦP.40.50.60 0.055 0.059 0.063 DEP 0.05 0.0 0.20 0.002 0.004 0.008 9
Devices Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 TO-263-2L Tube 50 Classification Profile 0
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 00 C 50 C 60-20 seconds 50 C 200 C 60-20 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 83 C 60-50 seconds 27 C 60-50 seconds See Classification Temp in table See Classification Temp in table 2 20** seconds 30** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm 3 350-2000 Volume mm 3 >2000 <.6 mm 260 C 260 C 260 C.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B02 5 Sec, 245 C HOLT JESD-22, A08 000 Hrs, Bias @ 25 C PCT JESD-22, A02 68 Hrs, 00%RH, 2atm, 2 C TCT JESD-22, A04 500 Cycles, -65 C~50 C