Electronics I ELEC 311/1 BB. Final August 14, hours 6

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Course Number Section Electronics I ELEC 311/1 BB Examination Date Time # of pages Final August 14, 2009 3 hours 6 Instructor(s) Dr.R. Raut M aterials allowed: No Yes X (Please specify) Calculators allowed: No X Yes Students are allowed to use ENCS faculty approved calculators Special Instructions: You MUST attempt Q.1 (soft skill component). For Q.2 Q.7, answer any FOUR questions. Before submitting your answer book, fill in the Table below indicating the answers you want to be graded. If you do not fill in the Table, the instructor will mark your answers as they appear one after another in the answer book Show all steps clearly in neat and legible handwriting. Students are required to return the question paper together with exam booklet(s). Table Answers to be graded Marks Q.1 (compulsory)

(Soft skill component- The student MUST answer this question) Q.1: Consider the MOS circuit below. Both Q 1 and Q 2 have V t =0.7 V. Ignore the channel modulation effect. You may use the I-V equation: I K V V 2 ni ( GS t ), i=1,2 for your work. Given K 500 AV /, K 750 AV / for transistors Q 1 and Q 2 respectively. 2 2 n1 n2 (a) Design R to establish I D = 100 μa in the transistor Q 1 (b) Find the drain current and drain voltage for Q 2. VDD 3V R2 20 k R Q 2 Q 1 Figure 1: (Answer any FOUR from the questions below) Q.2: A zener diode exhibits a voltage of 6.5 V for I Z = 5 ma. The zener has I ZK =0.5 ma, and a minimum of five times I ZK must flow through the zener for reliable operation. The diode has an internal resistance of 15 ohms. The device is used to build a shunt regulator circuit as shown below. The raw DC supply has a nominal value of 15 V, and can range between 12 V to 18 V. The load current varies from 0 ma to 15 ma. V S R I L V V Z O R L Figure 2:

(a) Design a suitable value for the resistance R for reliable operation. (b) What will be the output voltage if R L = 450 Ω is connected across the output of the system and the raw DC is at its lowest value (12 V)? Q.3: A bridge-rectifier circuit with a filter capacitor has R L = 100 ohms. The secondary transformer delivers a sinusoid of 15 V (rms) and has a frequency of 60 Hz. The diodes have V DO = 0.7 V each. Figure 3 (a) What will be the value of the filter capacitor C so that the ripple voltage is limited to below 500 mv peak-to-peak? (b) What is the DC voltage at the output of the system? (c) What is the conduction angle for each diode in the system? Explain with appropriate sketches. Q.4: For the BJT circuit (Figure 4), the signal source generates ac signal with zero DC. The transistor has =100, and r o =20 k. (a) Find R E to establish a DC current of I E = 0.5 ma. Assume V BE =0.7 V for conduction. (b) Find R C to obtain V C = 5 V. (c) Determine the system voltage gain with R L = 10 k,

Figure 4: Q.5: Consider the emitter-degenerated CE BJT amplifier circuit shown below. The signal source has a resistance R s = 1 kω and the load R L is 5 kω. Given V A = infinity, β =100, I E = 2 ma. (a) What value of R E will make R in =10 kω? (b) With the above value of R E, what will be the overall voltage gain v o /v i of the system? (c) If R E is by-passed by a large capacitance (negligible reactance), what voltage gain can be obtained? V CC v o v i 100 k Figure 5: V EE Q.6: For the circuit shown (Figure 6)

(a) Draw the ac equivalent circuit for the amplifier. (b) Find the voltage gain v o /v sig. Assume that the source provides a small signal v sig with zero DC., and that =100. (c)what will be the maximum v sig value for which the small signal approximation will remain valid? Figure 6: Q.7: Consider the MOSFET amplifier in the figure below. Given that V G = 4V V DD =10 V, R S =1 k. The transistor has V t = 1V, and k ( W / L) = 5 ma/v 2. n (a) Find the bias current I D through the MOS device. (b) What will be the voltage gain v o /v sig, if R D =15 k, R G1 = 2 M, R G2 =1 M,R sig =10 kω? Figure 7:

Some important Formulas (BJT & MOSFET)