N-Channel 25 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 25.35 at V GS = V 63.325 at V GS = 7.5 V 62 TO-22AB Top View S D G Ordering Information: -GE3 (lead (Pb)-free and halogen-free) 57.6 nc FEATURES ThunderFET power MOSFET Tuned for the lowest R DS -C oss FOM Maximum 75 C junction temperature % R g and UIS tested Material categorization: for definitions of compliance please see /doc?9992 APPLICATIONS Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting Synchronous rectification DC/DC converter Motor drive switch DC/AC inverter Solar micro inverter Class D audio amplifier G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 25 V Gate-Source Voltage V GS ± 2 T C = 25 C 63 Continuous Drain Current (T J = 5 C) I D T C = 7 C 36.3 A Pulsed Drain Current (t = μs) I DM 5 Avalanche Current I AS 6 L =. mh Single Avalanche Energy a E AS 8 mj Maximum Power Dissipation a T C = 25 C 375 b P D W T C = 25 C 25 b Operating Junction and Storage Temperature Range T J, T stg -55 to +75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient (PCB mount) c R thja 4 C/W Junction-to-Case (Drain) R thjc.4 Notes a. Duty cycle %. b. See SOA curve for voltage derating. c. When mounted on " square PCB (FR4 material). S6-323-Rev. A, 4-Jul-6 Document Number: 7933 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 μa 25 - - V Gate Threshold Voltage V GS(th) V DS = V GS, I D = 25 μa 2-4 Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V - - ± 25 na Zero Gate Voltage Drain Current I DSS V DS = 25 V, V GS = V, T J = 25 C - - 5 V DS = 25 V, V GS = V - - μa V DS = 25 V, V GS = V, T J = 75 C - - 5 ma On-State Drain Current a I D(on) V DS V, V GS = V 9 - - A Drain-Source On-State Resistance a V GS = V, I D = 3 A -.25.35 R DS(on) V GS = 7.5 V, I D = 3 A -.26.325 Forward Transconductance a g fs V DS = 5 V, I D = 3 A - 63 - S Dynamic b Input Capacitance C iss - 32 - Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz - 84 - pf Reverse Transfer Capacitance C rss - 8 - Total Gate Charge c Q g - 57.6 88 Gate-Source Charge c Q gs V DS = 25 V, V GS = V, I D = 6 A - 5. - nc Gate-Drain Charge c Q gd - 8.4 - Gate Resistance R g f = MHz.5 3. 5 Turn-On Delay Time c t d(on) - 3 26 Rise Time c t r V DD = 25 V, R L = 2.8-93 86 Turn-Off Delay Time c t d(off) I D 6 A, V GEN = V, R g = - 3 6 ns Fall Time c t f - 72 44 Drain-Source Body Diode Ratings and Characteristics b (T C = 25 C) Pulsed Current (t = μs) I SM - - A Forward Voltage a V SD I F = A, V GS = V -.79.2 V Reverse Recovery Time t rr - 22 42 ns Peak Reverse Recovery Charge I RM(REC) I F = 3 A, di/dt = A/μs - 4.5 29 A Reverse Recovery Charge Q rr -.6 3.2 μc Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S6-323-Rev. A, 4-Jul-6 2 Document Number: 7933 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 2 5 6 V GS = V thru 7 V 2 2 8 4 V GS = 6 V V GS = 5 V V GS = 4 V 3 6 9 2 5 V DS - Drain-to-Source Voltage (V) 9 6 3 T C = 25 C T C = 25 C T C = -55 C 2 4 6 8 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 75.35 T C =-55 C g fs - Transconductance (S) 6 45 3 5 T C = 25 C T C = 25 C R DS(on) - On-Resistance (Ω).3.27.23.9 V GS = 7.5 V V GS = V 5 5 2 25 3.5 2 4 6 8 Transconductance On-Resistance vs. Drain Current 7 C - Capacitance (pf) 56 42 28 4 C rss C iss C oss V GS - Gate-to-Source Voltage (V) 8 6 4 2 I D = 6 A V DS = V, 25 V, 5 V 25 5 75 25 V DS - Drain-to-Source Voltage (V) 3 26 39 52 65 Q g - Total Gate Charge (nc) Capacitance Gate Charge S6-323-Rev. A, 4-Jul-6 3 Document Number: 7933 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) R DS(on) - On-Resistance (Normalized) 3. 2.5 2..5. I D = 3 A V GS = V V GS = 7.5 V.5-5 -25 25 5 75 25 5 75 T J - Junction Temperature ( C) V GS(th) - Variance (V).5 -.5 -. -.5 I D = 25 μa I D = 5 ma -2. -5-25 25 5 75 25 5 75 T J - Temperature ( C) On-Resistance vs. Junction Temperature Threshold Voltage.5 32 R DS(on) - On-Resistance (Ω).2.9.6.3 T J = 25 C I D = 3 A T J = 25 C V DS - Drain-to-Source Voltage (V) 36 292 278 264 I D = ma 4 5 6 7 8 9 V GS - Gate-to-Source Voltage (V) 25-5 -25 25 5 75 25 5 75 T J - Temperature ( C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature 7 I S - Source Current (A).. T J = 5 C T J = 25 C 56 42 28 4..2.4.6.8..2 V SD - Source-to-Drain Voltage (V) 25 5 75 25 5 75 T C - Case Temperature ( C) Source Drain Diode Forward Voltage Current Derating S6-323-Rev. A, 4-Jul-6 4 Document Number: 7933 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
THERMAL RATINGS (T A = 25 C, unless otherwise noted) I DM limited I D limited Limited by R DS(on) () μs ms ms. ms, DC T C = 25 C Single pulse BVDSS limited.. V DS - Drain-to-Source Voltage (V) () V GS > minimum V GS at which R DS(on) is specified I DAV (A) 5 C 25 C..... Time (s) Safe Operating Area Single Pulse Avalanche Current Capability vs. Time Normalized Effective Transient Thermal Impedance Duty cycle =.5.2 Notes:.. t.5 t 2 t. Duty cycle, D =.2 t 2 2. Per unit base = R thja = 4 C/W Single pulse 3. T JM -T A = P DM Z (t) thja 4. Surface mounted.... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient P DM S6-323-Rev. A, 4-Jul-6 5 Document Number: 7933 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
THERMAL RATINGS (T A = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty cycle =.5.2..5.2 Single pulse..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 C) - Normalized Transient Thermal Impedance Junction to Case (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?7933. S6-323-Rev. A, 4-Jul-6 6 Document Number: 7933 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Package Information TO-22AB D L H() Q L() E 2 e 3 b M * b() Ø P C A F MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65.67.83 b.69..27.4 b().2.73.47.68 c.36.6.4.24 D 4.85 5.49.585.6 D2 2.9 2.7.48.5 E.4.5.395.44 e 2.4 2.67.95.5 e() 4.88 5.28.92.28 F.4.4.45.55 H() 6.9 6.48.24.255 J() 2.4 2.92.95.5 L 3.35 4.2.526.552 L() 3.32 3.82.3.5 Ø P 3.54 3.94.39.55 Q 2.6 3..2.8 ECN: T4-43-Rev. P, 6-Jun-4 DWG: 547 Note * M =.32 mm to.62 mm (dimension including protrusion) Heatsink hole for HVM e() J() D2 Revison: 6-Jun-4 Document Number: 795 For technical questions, contact: hvm@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
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