Typical Gmax, OIP3, 5V,270mA 42 OIP3. 30 P1dB Frequency (GHz)

Similar documents
Frequency (GHz) 5000 MHz

= 35 ma (Typ.) Frequency (GHz)

SGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

Gain and Return Loss vs Frequency. s22. Frequency (GHz)

SGA7489Z DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

SGA2463Z. Frequency (GHz) 18.0 dbm 1950MHz. 7.2 dbm 1950 MHz 255 C/W

SGA2386ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 2800 MHz >10dB 97 C/W

SGA3363Z. = 35 ma (Typ.) Frequency (GHz) T L MHz >10dB 255 C/W

NOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies

SGA2363ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 5000 MHz >10dB

Typical IP3, P1dB, Gain. 850 MHz 1960 MHz 2140 MHz 2450 MHz

SGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd

SGB-6433(Z) Vbias RFOUT

V S. RF Out / V S. Specification (V S =3V) Specification (V S =4V) Min. Typ. Max. Min. Typ. Max.

CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E

SXA-3318B(Z) 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER. Product Description. Features. Applications

SBB MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK. Features. Product Description. Applications

CGB-1089Z. 50MHz to 1000MHz SINGLE ENDED InGaP/GaAs HBT MMIC CATV AMPLIFIER. Features. Product Description. Applications

Gain and Return Loss versus Frequency (w/ BiasTees) 25 C 25 C 25 C. Frequency (GHz)

Amplifier Configuration

RF3375 GENERAL PURPOSE AMPLIFIER

Amplifier Configuration

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

SGA-6489 SGA-6489Z Pb

Not For New Design FMS W GaAs phemt SPDT SWITCH. Product Description. Features. Applications

RF2044A GENERAL PURPOSE AMPLIFIER

SZA-5044(Z) 4.9GHz to 5.9GHz 5V POWER AMPLIFIER. Features. Product Description. Applications. Package: QFN, 4mmx4mm

RFPA TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER

RF2436 TRANSMIT/RECEIVE SWITCH

RF2044 GENERAL PURPOSE AMPLIFIER

Absolute Maximum Ratings Parameter Rating Unit Max Input Power, OFDM Modulated, 3:1 Load VSWR +39 dbm Max Input Power, 2:1 VSWR +41 dbm ESD HBM Rating

RF V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER

FMS W GaAs WIDEBAND SPDT SWITCH. Features. Product Description. Applications

Absolute Maximum Ratings Parameter Rating Unit V D1, V D2, V D3 +8 V V G 0 V Junction Temperature C Continuous P DISS (T = ) C/W (derate 37 mw/ C abov

SZM-3066Z. 3.3GHz to 3.8GHz 2W POWER AMPLIFIER. Product Description. Features. Applications. Package: QFN, 6mmx6mm

RFIN 2 GND. Product Description. Ordering Information. GaAs HBT GaAs MESFET. InGaP HBT

RF1 RF2 RF3 RF4. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS

VCC1 GND IN GND LOP LON GND GND. Product Description. GaAs HBT GaAs MESFET InGaP HBT

SBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier

Product Description. GaAs HBT GaAs MESFET InGaP HBT

RF5623 SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

Specification Min. Typ. Max.

RF1136 BROADBAND LOW POWER SP3T SWITCH

VCC GND RF IN. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RF1226 BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH

Simplified Device Schematic. Pin 18. Pin 8. Pin 16. Stage 1 Bias. Stage 2 Bias. Pin 10

SBB-1089 SBB-1089Z MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier

CGA-6618 CGA-6618Z Pb

RF V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER

RF1200 BROADBAND HIGH POWER SPDT SWITCH

DATA GND VCC GND RF1 GND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces

RF2126 HIGH POWER LINEAR AMPLIFIER

RF3857 DUAL CHANNEL LNA WITH BYPASS MODE

Product Description. Ordering Information. GaAs MESFET Si BiCMOS

RF3376 General Purpose Amplifier

SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block

BBQN VCC VEE RFP RFN VEE BBIN

GND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces. GaAs MESFET Si BiCMOS Si CMOS Si BJT

RFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER

RFGA0024. InGaP HBT. 1000MHz. Product Description. Ordering Information

RF V TO 3.6V, 2.4GHz FRONT END MODULE

RF2418 LOW CURRENT LNA/MIXER

RF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER

RFDA0035 DIGITAL CONTROLLED IF DUAL VGA 5 BIT 1dB LSB CONTROL

RF3394 GENERAL PURPOSE AMPLIFIER

RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT

RFPA GHz TO 5.9GHz 2W InGaP AMPLIFIER

VC1. Input Match RF IN. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

Preliminary C0.25 VDD N/C RF1 N/C N/C. Product Description. Ordering Information

RF V TO 4.2V, 2.4GHz FRONT END MODULE

SGA-2263 SGA-2263Z Pb DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier

RF V TO 4.0V, 915MHz TRANSMIT/RECEIVE MODULE

I REF Q REF GND2 GND2 GND2 VCC1. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RF2162 3V 900MHz LINEAR AMPLIFIER

SGA-4163 SGA-4163Z Pb DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier

LNA In. Input Match. LNA Vref. LNA Sel. RX Switch. TX Switch GND. PA Vcc2 GND GND. PA Out. Product Description. GaAs HBT GaAs MESFET InGaP HBT

RF7234 3V TD-SCDMA/W-CDMA LINEAR PA MODULE BAND 1 AND 1880MHz TO 2025MHz

Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 39 ma Operational Voltage

RFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced

RF W GaN WIDEBAND PULSED POWER AMPLIFIER

SZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER

Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 8 ma Operational Voltage

NF (db) Symbol Parameters Units Frequency Min. Typ. Max GHz 28.5 S 21 Small Signal Gain 3.5 GHz GHz 1.

RF8889A SP10T ANTENNA SWITCH MODULE

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz

Product Description. Ordering Information. Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT

VCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

NLB-310. RoHS Compliant & Pb-Free Product. Typical Applications

Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS Si BJT. DRAFT DRAFT1 of

RF V TO 4.2V, 2.4GHz FRONT-END MODULE

RF V, SWITCH AND LNA FRONT END SOLUTION

RF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment

RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz

RFDA0056 Digital Controlled Variable Gain Amplifier 300MHz to 1100MHz, 6-Bit 0.5dB LSB Control

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

Stage 3 Bias. Detector

VCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

Transcription:

Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description RFMD s SGA-9289 is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP 3 =42.5dBm, and P 1dB =27.5dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT RF MEMS Gmax Typical Gmax, OIP3, P1dB @ 5V,270mA 25 44 23 42 OIP3 21 40 19 38 17 36 15 Gmax 34 13 32 11 30 P1dB 9 28 7 26 5 24 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Frequency (GHz) OIP3, P1dB (dbm) Features Available in RoHS Compliant and Green Packaging 50MHz to 3000MHz Operation 42.5dBm Output IP 3 Typ. at 1.96GHz 1dB Gain Typ. at 1.96GHz 27.5dBm P 1dB Typ. at 1.96GHz 2.4dB NF Typ. at 0.9GHz Cost-Effective 3V to 5V Operation Applications Wireless Infrastructure Driver Amplifiers CATV Amplifiers Wireless Data, WLL Amplifiers AN-022 Contains Detailed Application Circuits Parameter Specification Min. Typ. Max. Unit Condition Maximum Available Gain 2 db 900MHz, Z S =Z S *, Z L =Z L * 13.1 db 1960MHz Power Gain 16.2 17.7 19.2 db 900MHz [1], Z S =Z SOPT, Z L =Z LOPT 1 1 13.0 db 1960MHz [2] Output Power at 1dB Compression 28.0 dbm 900MHz, Z S =Z SOPT, Z L =Z LOPT 26.0 27.5 dbm 1960MHz [2] Output Third Order Intercept Point 4 dbm 900MHz, Z S =Z SOPT, Z L =Z LOPT, P OUT =+13dBm per tone 40.0 42.5 dbm 1960MHz [2] Noise Figure 2.4 db 900MHz, Z S =Z SOPT, Z L =Z LOPT 2.5 db 1960MHz DC Current Gain 100 180 300 Breakdown Voltage 7.5 8.5 V collector - emitter Thermal Resistance 32 C/W junction - lead Device Operating Voltage 5.5 V collector - emitter Operating Current 250 280 320 ma Test Conditions: V CE =5V, I CQ =280mA (unless otherwise noted), T L =25 C. [1] 100% Tested [2] Sample Tested RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6

Absolute Maximum Ratings Parameter Rating Unit Max Base Current (I B ) 10 ma Max Device Current (I CE ) 400 ma Max Collector-Emitter Voltage (V CEO ) 7 V Max Collector-Base Voltage (V CBO ) 20 V Max Emitter-Base Voltage (V EBO ) 4.8 V Max Junction Temp (T J ) +150 C Operating Temp Range (T L ) See Graph Max Storage Temp +150 C *Note: Load condition1, Z L =50Ω. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D <(T J -T L )/R TH, j-l and T L =T LEAD Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Typical Performance with Engineering Application Circuit Freq VCE ICQ P1dB OIP3 1 Gain (MHz) (V) (ma) (dbm) (dbm) S11 S22 NF 945 5 287 27.8 4 17.8-19 -11 2.5 2.93 - j3.92 15.81 + j1.57 1960 5 292 27.5 4 12.1-24 -21 2.5 4.75 - j9.12 10.3 - j4.87 2140 5 293 27.7 4 11.1-11 -20 2.8 4.30 - j9.09 13.4 + j2.31 2440 5 287 27.5 4 9.8-17 -20 3.0 4.05 - j13.78 11.76 - j9.2 1 P OUT =+13dBm per tone for V CE =5V, 1MHz tone spacing Typical Performance with Engineering Application Circuit Freq VCE ICQ P1dB OIP3 2 Gain (MHz) (V) (ma) (dbm) (dbm) Data above represents typical performance of the application circuits notes in Application Note AN-022. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at wwww.rfmd.com or call your local sales representative. S11 S22 NF 945 3 312 25.4 38.6 16.8-18 -9 2.6 5.61 - j4.75 6.51 + j2.58 1960 3 315 26.0 39.3 1-18 -15 2.9 3.23 - j5.67 4.95 + j1.73 2440 3 315 26.1 38.0 9.4-29 -17 3.4 4.07-14.25 11.62 - j11.83 2 P OUT =+10dBm per tone for V CE =3V, 1MHz tone spacing Maximum Recommended Operational Dissipated Power 2.4 C Total Dissipated Power (W) 1.6 1.2 0.8 0.4 Operational Limit (Tj<130C) Z SOPT B E Z LOPT 0.0-40 -10 20 50 80 110 140 Lead Temperature (C) 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

De-embedded S-Parameters (Z S =Z L =50 Ohms, V CE =5V, I CQ =270mA, 25 C) Gain, Gmax 45 35 25 15 5-5 Insertion Gain & Isolation Isolation Gmax Gain 0 1 2 3 4 5 6 7 8 Frequency (GHz) S11 vs Frequency 0-12 -24-36 -48-60 Isolation Gain 25 20 15 10 5 0 Insertion Gain vs Temperature T = -40, 25, 85 C -5-10 0 1 2 3 4 5 6 7 8 Frequency (GHz) S22 vs Frequency 4 GHz 5 GHz 3 GHz 2 GHz 8 GHz 3 GHz 2 GHz 5 GHz 4 GHz 8 GHz 1 GHz 0.0 inf 1 GHz 0.0 inf 50 MHz S11 S22 50 MHz Note: S-parameters are de-embedded to the device leads with Z S =Z L =50Ω. The data represents typical performace of the device. De-embedded s-parameters can be downloaded from our website (www.sirenza.com). IC (ma) DC-IV Curves 700 600 500 400 300 200 100 0 0 2 4 6 8 VCE (V) I b = - ma, ma steps T=25 C support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6

Pin Function Description 1 Base RF input. 2 Emitter Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. 3 Collector RF output. 4 Emitter Same as pin 2. Recommended Mounting Configuration for Optimum RF and Thermal Performance Ground Plane Plated Thru Holes (0.020" DIA) SOT-89 Package Machine Screws Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items should be implemented to maximize MTTF and RF performance. 1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL] 2. Incorporate a large ground pad area with multiple plated-through vias around pin 4 of the device. [CRITICAL] 3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as close to the ground tab (pin 4) as possible. [RECOMMENDED] 4. Use 2 ounce copper to improve the PCB s heat spreading capability. [RECOMMENDED] 4 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances..161.177.068 P2 4 2.016.019.118 1 3.096.041.059.015 Part Symbolization The part will be symbolized with the P2 ( P2Z for RoHS version) designator and a dot signifying pin 1 on the top surface of the package. Alternate marking SGA9289Z or SGA9289 on line one with Trace Code on line two. Ordering Information Part Number Reel Size Devices/Reel SGA-9289 13 3000 SGA-9289Z 13 3000 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6

6 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.