A, 4V,.55 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies (SMPS) Uninterruptable Power Supply High Speed Power Switching Features Low Gate Charge Q g results in Simple Drive Requirement September 22 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Improved Body Diode Package Symbol JEDEC TO-22AB JEDEC TO-263AB DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) G D S Absolute Maximum Ratings T J = 25 C unless otherwise noted Symbol Parameter Ratings Units S Drain to Source Voltage 4 V Gate to Source Voltage ±3 V Drain Current I D Continuous (T C = 25 o C, = V) A Continuous (T C = o C, = V) 6.3 A Pulsed 4 A P D Power dissipation Derate above 25 o C Thermal Characteristics 147 1.18 T J, T STG Operating and Storage Temperature -55 to 15 Soldering Temperature for seconds 3 (1.6mm from case) Mounting Torque, 8-32 or M3 Screw ibf*in (1.1N*m) W W/ o C o C o C R θjc Thermal Resistance Junction to Case.85 o C/W R θcs Thermal Resistance Case to Sink, Flat, Greased Surface.5 TYP o C/W R θja Thermal Resistance Junction to Ambient 62 o C/W 22 Fairchild Semiconductor Corporation Rev. C
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity IRF74A IRF74A TO-22AB Tube NA 5 RF1S74A RF1S74AST TO-263AB 33mm 24mm 8 Electrical Characteristics T J = 25 C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units Statics B VDSS Drain to Source Breakdown Voltage I D = 25µA, = V 4 - - V B VDSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, ID = 1mA -.48 - r DS(ON) Drin to Source On-Resistance = V, I D = 6A -.4.55 Ω (th) Gate Threshold Voltage =, I D = 25µA 2. 3.6 4. V V I DS = 35V - - 1 DSS Zero Gate Voltage Drain Current µa = V T C = 15 o - - 25 I GSS Gate to Source Leakage Current = ±2V - - ± na Dynamics g fs Forward Transconductance = 5V, I D = 6A 4.9 - - S Q g(tot) Total Gate Charge = V, - 17.2 22 nc Q gs Gate to Source Gate Charge = 32V, - 4.5 6. nc Q gd Gate to Drain Miller Charge I D = A - 5.8 7.5 nc t d(on) Turn-On Delay Time = 2V, - 6 - ns t r Rise Time I D = A - 8 - ns t d(off) Turn-Off Delay Time R G = Ω, - 21 - ns t f Fall Time R D = 19.5Ω - 7 - ns C ISS Input Capacitance - 6 - pf = 25V, = V, C OSS Output Capacitance - 15 - pf f = 1MHz C RSS Reverse Transfer Capacitance - 7.8 - pf C OSS C OSS Output Capacitance Output Capacitance Avalanche Characteristics Drain-Source Diode Characteristics = V, = 1V, f = 1MHz = V, = 32V, f = 1MHz - 149 - pf - 52 - pf E AS Single Pulse Avalanche Energy 63 - - mj I AR Avalanche Current - - A E AR Repetitive Avalanche Energy 12.5 - - mj I S I SM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) MOSFET symbol showing the integral reverse p-n junction diode. - - A - - 4 A V SD Source to Drain Diode Voltage I SD = 18A S - - 1.25 V I SD = 9A - - V t rr Reverse Recovery Time I SD = A, di SD /dt = A/ms - 24 36 ns Q RR Reverse Recovered Charge I SD = A, di SD /dt = A/ms - 1.9 2.9 µc G D 22 Fairchild Semiconductor Corporation Rev. C
Typical Characteristic I D, DRAIN TO SOURCE CURRENT (A) T C = 25 o C DESCENDING V 7V 6V 5.5V 5V 4.5V I D, DRAIN TO SOURCE CURRENT (A) T C = 15 o C DESCENDING V 6V 5.5V 5V 4.5V Figure 1. Output Characteristics Figure 2. Output Characteristics I D, DRAIN CURRENT (A) = 5V T J = 25 o C T J = 15 o C 3 4 5 6 7 8 r DS(ON), DRAIN TO SOURCE ON RESISTANCE (W).8.6.4.2 = V, I D = A -5-25 25 5 75 125 15, GATE TO SOURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE ( o C) Figure 3. Transfer Characteristics Figure 4. Drain To Source On Resistance vs Junction Temperatrue C, CAPACITANCE (pf) 4 = V, f = 1MHz C ISS 3 C OSS 2 C RSS 1 C ISS = C GS + C GD C OSS @ C DS + C GD C RSS = C GD, GATE TO SOURCE VOLTAGE (V) 16 I D = A 12 2V 8 32V 4 8V 2 3 4 Q g, GATE CHARGE (nc) Figure 5. Capacitance vs Drain To Source Voltage Figure 6. Gate Charge Waveforms For Constant Gate Current 22 Fairchild Semiconductor Corporation Rev. C
Typical Characteristic I SD, SOURCE TO DRAIN CURRENT (A) T J = 15 o C T J = 25 o C I D, DRAIN CURRENT (A) OPERATION IN THIS AREA LIMITED BY R DS(ON) T C = 25 o C ms 1ms ms.2.4.6.8 1.2 1.4 1.6 1.8 2. V SD, SOURCE TO DRAIN VOLTAGE (V) Figure 7. Source to Drain Diode Forward Voltage Figure 8. Maximum Safe Operating Area I D, DRAIN CURRENT (A) 8 6 4 2 25 5 75 125 15 T C, CASE TEMPERATURE ( C) Figure 9. Maximum Drain Current vs Case Temperature Z qjc, NORMALIZED THERMAL RESPONSE -1-2.5.2..5.2.1 SINGLE PULSE -3-6 -5-4 -3-2 -1 t 1, RECTANGULAR PULSE DURATION (s) Figure. Normalized Transient Thermal Impedance, Junction to Case P D DUTY FACTOR, D = t 1 / t 2 PEAK T J = (P D X Z qjc X R qjc ) + T C t 1 t 2 22 Fairchild Semiconductor Corporation Rev. C
Test Circuits and Waveforms L VARY t P TO OBTAIN REQUIRED PEAK I AS R G DUT + - I AS t P BS V t P I AS.1W t AV Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms Q g(tot) R L = V + Q g(5) - = 5V DUT = 1V I g(ref) Q g(th) Q gs Q gd I g(ref) Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms t ON t OFF t d(on) t d(off) R L t r t f 9% 9% + - % % R GS DUT 9% % 5% PULSE WIDTH 5% Figure 15. Switching Time Test Circuit Figure 16. Switching Time Waveform 22 Fairchild Semiconductor Corporation Rev. C
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