V 58 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop Low Tail Current valanche Rated MXIMUM RTINGS Parameter High Freq. Switching to KHz Ultra Low Leakage Current RBSO and SCSO Rated G C E TO-47 ll Ratings: T C = 5 C unless otherwise specified. UNIT G C E ES Collector-Emitter Voltage GR V EC Collector-Gate Voltage (R GE = K ) Emitter-Collector Voltage 5 Volts V GE Gate-Emitter Voltage ± Continuous Collector Current @ T C = 5 C 58 M Continuous Collector Current @ T C = 9 C Pulsed Collector Current @ T C = 5 C mps I LM RBSO Clamped Inductive Load Current @ R g = T C = 5 C E S Single Pulse valanche Energy 65 P D Total Power Dissipation Watts T J,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.63" from Case for Sec. -55 to C STTIC ELECTRICL CHRCTERISTICS Characteristic / Test Conditio MIN TYP MX UNIT BES RBES Collector-Emitter Breakdown Voltage (V GE = V, =.5m) Collector-Emitter Reverse Breakdown Voltage (V GE = V, = m) -5 V GE (TH) Gate Threshold Voltage (E = V GE, = 7µ, T j = 5 C) 3 4 5 Volts E (ON) ES Collector-Emitter On Voltage (, =, T j = 5 C) Collector Cut-off Current (E = ES, V GE = V, T j = 5 C).6..5 Collector-Emitter On Voltage (, =, T j = 5 C) Collector Cut-off Current (E = ES, V GE = V, T j = 5 C)..8 µ I GES Gate-Emitter Leakage Current (V GE = ±V, E = V) ± n CUTION: These Devices are Seitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. PT Website - http://www.advancedpower.com US 5 S.W. Columbia Street Bend, Oregon 977-35 Phone: (54) 38-88 FX: (54) 388-364 EUROPE Chemin de Magret F-337 Merignac - France Phone: (33) 5 57 9 5 5 FX: (33) 5 56 47 97 6
DYNMIC CHRCTERISTICS Characteristic Test Conditio MIN TYP MX UNIT C ies C oes C res Q g Q ge Q gc Input Capacitance Output Capacitance Reverse Trafer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Capacitance V GE = V E = 5V f = MHz Gate Charge C = ES = 8 9 5 9 pf nc Resistive Switching (5 C) C = ES = 3 6 4 8 47 5 Turn-on Switching Energy Turn-off Switching Energy Inductive Switching ( C) LMP (Peak) =.66ES = T J = + C 7 65 4 8.5... E ts Total Switching Losses.5 3. E ts Total Switching Losses Inductive Switching (5 C) LMP (Peak) =.66ES = 7 8 4 3 34 7.. gfe Forward Traconductance E = V, = 6 S THERML ND MECHNICL CHRCTERISTICS Characteristic MIN TYP MX UNIT R JC R J Junction to Case Junction to mbient C/W W T Package Weight. 6. oz gm Torque Mounting Torque (using a 6-3 or 3mm Binding Head Machine Screw). lb in N m Repetitive Rating: Pulse width limited by maximum junction temperature. IC =, C = V, R GE = 5, L = 44µH, T j = 5 C 3 See MIL-STD-7 Method 347 PT Reserves the right to change, without notice, the specificatio and information contained herein.
C, CPCITNCE (pf), COLLECTOR CURRENT (MPERES), COLLECTOR CURRENT (MPERES) 5V 5V 4 8 6 4 8 6 Figure, Typical Output Characteristics (T J = 5 C) Figure, Typical Output Characteristics (T J = C) 3 4 5 5 Figure 3, Typical Output Characteristics @ Figure 4, Maximum Forward Safe Operating rea 3,, µsec. Pulse Test f = MHz 8V 7V 6V C ies C res... 8 Q g, TOTL GTE CHRGE (nc) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage. V GE =5, & 9V T C =-55 C T C =+5 C T C =+ C C oes V GE, GTE-TO-EMITTER VOLTGE (VOLTS), COLLECTOR CURRENT (MPERES), COLLECTOR CURRENT (MPERES) 5 6 8 4 OPERTION LIMITED BY E (ST) T C =+5 C T J =+ C SINGLE PULSE = E =V V GE =5, & 9V E =V 8V 7V 6V E =48V µs ms ms Z JC, THERML IMPEDNCE ( C/W)..5..5 D=...5.. SINGLE PULSE. -5-4 -3 - -. RECTNGULR PULSE DURTION (SECONDS) Figure 7, Maximum Effective Traient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t t Duty Factor D = t /t Peak T J = P DM x Z θjc + T C
, COLLECTOR CURRENT (MPERES) TOTL SWITCHING ENERGY LOSSES () BES, COLLECTOR-TO-EMITTER BREKDOWN E (ST), COLLECTOR-TO-EMITTER VOLTGE (NORMLIZED) STURTION VOLTGE (VOLTS) 4. 3.5 3..5..5. - -5 5 75 5 5 75 5 T C, CSE TEMPERTURE ( C) Figure 8, Typical E (ST) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature...9.8.7 - -5 5 75 5 8 R G, GTE RESISTNCE (OHMS) Figure, Breakdown Voltage vs Junction Temperature Figure, Typical Switching Energy Losses vs Gate Resistance. - -5 5 75 5, COLLECTOR CURRENT (MPERES) Figure, Typical Switching Energy Losses vs. Junction Temperature Figure 3, Typical Switching Energy Losses vs Collector Current C =.66 ES V GE = +5V R G = C =.66 ES V GE = +5V = C =.66 ES V GE = +5V T J = +5 C R G =.. F, FREQUENCY (KHz) Figure 4,Typical Load Current vs Frequency SWITCHING ENERGY LOSSES () SWITCHING ENERGY LOSSES (), COLLECTOR CURRENT (MPERES).5..5...8.6.4. For Both: Duty Cycle = % T J = +5 C T sink = +9 C Gate drive as specified Power dissapation = 7W I LOD = I RMS of fundamental
HRGE *DRIVER SME TYPE S C =.66 ES E ts = + B 9% % 9% 9% uh LMP B R G % E (ST) % DRIVER* t=us Figure 5, Switching Loss Test Circuit and Waveforms E (off) 9% V GE (on) C R L =.5 ES % V GE (off) E (on) From Gate Drive Circuitry R G Figure 6, Resistive Switching Time Test Circuit and Waveforms 4.69 (.85) 5.3 (.9).49 (.59).49 (.98) T-47 Package Outline 6.5 (.4) BSC 5.49 (.6) 6.6 (.6) 5.38 (.) 6. (.44) Collector.8 (.89).46 (.845) 3. (.38) 3.8 (.) 4. (.77) Max..87 (.3) 3. (.3). (.6).79 (.3) 9.8 (.78).3 (.8). (.). (.55). (.87).59 (.) 5.45 (.5) BSC -Plcs. Dimeio in Millimeters and (Inches).65 (.65).3 (.84) Gate Collector Emitter PT's devices are covered by one or more of the following U.S.patents: 4,895,8 5,45,93 5,89,434 5,8,34 5,9,5 5,6,336 5,56,583 4,748,3 5,83, 5,3,474 5,434,95 5,58,58