Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications () G S G S G Top View of SOP 8 (8) (7) D D D D D D () G (6) (5) D D Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S () S (3) Ordering and Marking Information APM5A Assembly Material Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 5 C Handling Code TR : Tape & Reel Assembly Material L : Lead Free Device G : Halogen and Lead Free Device APM5A K : Note: ANPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). APM5A XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Absolute Maximum Ratings (T A = 5 C unless otherwise noted) Symbol Parameter N Channel P Channel Unit V DSS Drain-Source Voltage - S Gate-Source Voltage ± ± V I D * Continuous Drain Current =V(N) 8 -.3 I DM * Pulsed Drain Current =-V(P) 3-6 A I S * Diode Continuous Forward Current.5 - A T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 C P D * Power Dissipation T A =5 C T A = C.8 W R θja * Thermal Resistance-Junction to Ambient 6.5 C/W Note: *Surface Mounted on in pad area, t sec. Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics BV DSS I DSS I DSS Min. Typ. Max. Drain-Source Breakdown =V, I DS =5µA N-Ch - - Voltage =V, I DS =-5µA P-Ch - - - Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current (th) Gate Threshold Voltage I GSS Gate Leakage Current =±V, V DS =V R DS(ON) a Drain-Source On-State Resistance V DS =6V, =V - - N-Ch T J =85 C - - 3 V DS =-6V, =V - - - P-Ch T J =85 C - - -3 V DS =, I DS =5µA N-Ch.5.7 V DS =, I DS =-5µA P-Ch -.5 -.75 - N-Ch - - ± P-Ch - - ± =.5V, I DS =8A N-Ch - 6 =-.5V, I DS =-.3A P-Ch - 8 9 =.5V, I DS =5.A N-Ch - 3 36 =-.5V, I DS =-A P-Ch - 5 5 Unit V µa V µa mω
Electrical Characteristics (Cont.) (T A = 5 C unless otherwise noted) Symbol Parameter Test Conditions Diode Characteristics V SD a t rr q rr Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. I SD =.5A, =V N-Ch -.8.3 I SD =-A, =V P-Ch - -.7 -.3 I SD =-8A, dl SD /dt =A/µs N-Ch - 5 - P-Ch - - N-Ch - 7 - Reverse Recovery Charge I SD =-.3A, dl SD /dt =A/µs P-Ch - 6 - Unit V ns nc Dynamic Characteristics b N-Ch - - R G Gate Resistance =V,V DS =V,F=MHz P-Ch - 9 - C iss C oss C rss t d(on) t r t d(off) t f Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time =V, V DS =V, Frequency=.MHz N-Ch - 7 - P-Ch - 565 - N-Ch - 6 - P-Ch - 5 - =V, N-Ch - 5 - V DS =-V, Frequency=.MHz P-Ch - 95 - V DD =V, R L =Ω, I DS =A, V GEN =.5V, R G =6Ω V DD =-V, R L =Ω, I DS =-A, V GEN =-.5V, R G =6Ω N-Ch - 5 P-Ch - 6 N-Ch - P-Ch - 3 N-Ch - 73 P-Ch - 3 6 N-Ch - 3 P-Ch - 3 59 Ω pf ns N-Ch - 3 Q g Total Gate Charge V DS =V, =.5V, Gate Charge Characteristics b I DS =8A Q gs Gate-Source Charge Q gd Gate-Drain Charge V DS =-V, =-.5V, I DS =-.3A Notes: a : Pulse test ; pulse width 3µs, duty cycle %. b : Guaranteed by design, not subject to production testing. P-Ch - 6 8 N-Ch - - P-Ch - - N-Ch - - P-Ch -. - nc 3
Typical Characteristics Power Dissipation Drain Current.5. 8 Ptot - Power (W).5. ID - Drain Current (A) 6.5 T A =5 o C. 6 8 6 T A =5 o C,V G =.5V 6 8 6 Safe Operation Area Thermal Transient Impedance ID - Drain Current (A). Rds(on) Limit 3µs ms ms ms s DC T A =5 O C... Normalized Transient Thermal Resistance.....5. Single Pulse. Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E- E-3.. 3 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance ID - Drain Current (A) 8 6 8 6 = 3,, 5, 6, 7, 8, 9, V.5V V.5V RDS(ON) - On - Resistance (mω) 6 5 3 =.5V =.5V..5..5..5 3. 8 6 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage I D =8A.6 I DS =5µA RDS(ON) - On - Resistance (mω) 35 3 5 5 Normalized Threshold Voltage....8.6.. 3 5 6 7 8 9 VGS - Gate - Source Voltage (V). -5-5 5 5 75 5 5 5
Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance..75.5.5..75.5 =.5V I DS = 8A IS - Source Current (A) 3 T j =5 o C T j =5 o C.5 R ON @T j =5 o C: mω. -5-5 5 5 75 5 5.....6.8....6 VSD - Source - Drain Voltage (V) C - Capacitance (pf) 9 8 7 6 5 3 Crss Capacitance Coss Frequency=MHz Ciss 8 6 VDS - Drain - Source Voltage (V) VGS - Gate - source Voltage (V) 9 8 7 6 5 3 V DS =V I DS =8A Gate Charge 8 6 QG - Gate Charge (nc) 6
Typical Characteristics (Cont.) Power Dissipation Drain Current.5 5. Ptot - Power (W).5. -ID - Drain Current (A) 3.5 T A =5 o C. 6 8 6 T A =5 o C,V G =-.5V 6 8 6 Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A). Rds(on) Limit ms ms ms s DC T A =5 O C... Normalized Transient Thermal Resistance.....5 Single Pulse.. Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E- E-3.. 3 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 7
Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) 8 6 8 6 = -,-5,-6,-7-8,-9,-V -3V -V -.5V RDS(ON) - On - Resistance (mω) 8 6 8 6 = -.5V = -.5V..5..5..5 3. -VDS - Drain - Source Voltage (V) 8 6 -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 6 I D = -.3A.6 I DS = -5µA. RDS(ON) - On - Resistance (mω) 8 6 Normalized Threshold Voltage...8.6.. 3 5 6 7 8 9. -5-5 5 5 75 5 5 -VGS - Gate - Source Voltage (V) 8
Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward..8 = -.5V I DS = -.3A Normalized On Resistance.6....8.6 -IS - Source Current (A) T j =5 o C T j =5 o C. R ON @T j =5 o C: 8mΩ. -5-5 5 5 75 5 5...3.6.9..5.8 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 8 7 6 5 3 Crss Frequency=MHz Ciss Coss -VGS - Gate - source Voltage (V) 9 8 7 6 5 3 V DS = -V I DS = -.3A 8 6 -VDS - Drain - Source Voltage (V) 6 8 QG - Gate Charge (nc) 9
Package Information SOP-8 D SEE VIEW A E E h X 5 e b c A A A VIEW A L.5 GAUGE PLANE SEATING PLANE S Y M SOP-8 B O L MIN. MAX. MIN. A.75 A..5. MAX..69. A.5.9 b.3.5.. c.7.5.7. D.8 5..89.97 E 5.8 6..8. E 3.8..5.57 e.7 BSC.5 BSC h.5.5.. L..7.6.5 8 8 MILLIMETERS INCHES Note:. Follow JEDEC MS- AA.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side.
Carrier Tape & Reel Dimensions OD P P P A H A E OD B A T B W F K B A SECTION A-A SECTION B-B d T Application A H T C d D W E F SOP- 8 33.. 5 MIN..+. -. 3.+.5 -..5 MIN.. MIN...3.75. 5.5.5 P P P D D T A B K.. 8....5.5+. -..5 MIN..6+. -. 6.. 5.... (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 5
Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin ts Preheat t L Ramp-down 5 t 5 C to Peak Time Reliability Test Program Test item Method Description SOLDERABILITY MIL-STD-883D-3 5 C, 5 sec HOLT MIL-STD-883D-5.7 Hrs Bias @5 C PCT JESD--B, A 68 Hrs, %RH, C TST MIL-STD-883D-.9-65 C~5 C, Cycles Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (T L to T P ) 3 C/second max. 3 C/second max. Preheat C 5 C - Temperature Min (Tsmin) - Temperature Max (Tsmax) 5 C C 6- seconds 6-8 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L ) - Time (t L ) 83 C 6-5 seconds 7 C 6-5 seconds Peak/Classification Temperature (Tp) See table See table Time within 5 C of actual Peak Temperature (tp) -3 seconds - seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 5 C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package. Measured on the body surface.
Classification Reflow Profiles (Cont.) Table. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 <35 Volume mm 3 35 <.5 mm +/-5 C 5 +/-5 C.5 mm 5 +/-5 C 5 +/-5 C Table. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 Volume mm 3 35- Volume mm 3 > <.6 mm 6 + C* 6 + C* 6 + C*.6 mm.5 mm 6 + C* 5 + C* 5 + C*.5 mm 5 + C* 5 + C* 5 + C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 6 C+ C) at the rated MSL level. Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-56 Fax : 886-3-565 Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindain City, Taipei County 36, Taiwan Tel : 886--9-3838 Fax : 886--97-3838 3