Dual Common-Cathode Schottky Rectifier

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Dual Common-Cathode Schottky Rectifier TO-220AB MBR25xxCT PIN 3 CASE 2 3 TO-263AB ITO-220AB 2 3 MBRF25xxCT PIN 3 FEATURES Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Meets MSL level, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder dip 260 C, 40 s (for TO-220AB and ITO-220AB package) Complant to RoHS 2002/95/EC and in accordance to WEEE 2002/96/EC MBRB25xxCT 2 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. HEATSIN PRIMARY CHARACTERISTICS I F(AV) 2 x 2.5 A V RRM 35 V to 60 V I FSM 50 A V F 0.73 V at 30 A, 0.65 V at 5 A T J max. 50 C MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B02 E3 suffix for consumer grade, meets JESD 20 class A whisker test, HE3 suffix for high reliability grade (AEC-Q0 qualified), meets JESD 20 class 2 whisker test Polarity: As marked Mounting Torque: 0 in-lbs maximum MAXIMUM RATINGS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT Maximum repetitive peak reverse voltage V RRM 35 45 50 60 Working peak reverse voltage V RWM 35 45 50 60 V Maximum DC blocking voltage V DC 35 45 50 60 Maximum average forward rectified current at T C = 30 C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode total device 25 I F(AV) per diode 2.5 I FSM 50 Peak repetitive reverse surge current per diode at t p = 2 μs, khz I RRM.0 0.5 Peak non-repetitive reverse energy (8/20 μs waveform) per diode E RSM 25 mj Electrostatic discharge capacitor voltage human body model: C = 00 pf, R =.5 kω V C 25 kv Voltage rate of change (rated V R ) dv/dt 0 000 V/μs A A Document Number: 88675 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 5-Jun-0 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

MAXIMUM RATINGS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT Operating junction temperature range T J - 65 to + 50 C Storage temperature range T STG - 65 to + 75 Isolation voltage (ITO-220AB only) from terminal to heatsink t = min V AC 500 V ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT T C = 25 C - 0.75 I F = 5 A Maximum instantaneous T C = 25 C - 0.65 V forward voltage per diode () F V T C = 25 C 0.82 - I F = 30 A T C = 25 C 0.73 - Maximum instantaneous T C = 25 C 0.2.0 reverse current at blocking I () R ma voltage per diode T C = 25 C 40 50 Note () Pulse test: 300 μs pulse width, % duty cycle THERMAL CHARACTERISTICS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance from junction to case per diode R θjc.5 4.5.5 C/W ORDERING INFORMATION (Example) PACAGE PREFERRED P/N UNIT WEIGHT (g) PACAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR2545CT-E3/45.85 45 50/tube Tube ITO-220AB MBRF2545CT-E3/45.99 45 50/tube Tube TO-263AB MBRB2545CT-E3/45.35 45 50/tube Tube TO-263AB MBRB2545CT-E3/8.35 8 800/reel Tape and reel TO-220AB MBR2545CT-E3/4W.85 4W 50/tube Tube TO-220AB MBR2545CTHE3/45 ().85 45 50/tube Tube ITO-220AB MBRF2545CTHE3/45 ().99 45 50/tube Tube TO-263AB MBRB2545CTHE3/45 ().35 45 50/tube Tube TO-263AB MBRB2545CTHE3/8 ().35 8 800/reel Tape and reel Note () AEC-Q0 qualified www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88675 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 5-Jun-0

Average Forward Current (A) Transient Thermal Impedance ( C/W) Junction Capacitance (pf) RATINGS AND CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 30 Resistive or Inductive Load 24 8 2 6 0 0 50 00 50 Case Temperature ( C) Fig. - Forward Current Derating Curve Instantaneous Reverse Current (ma) 00 0 0. 0.0 T J = 75 C 0.00 0 20 40 60 80 00 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Peak Forward Surge Current (A) 50 25 00 75 50 25 0 T J = T J Max. 8.3 ms Single Half Sine-Wave 0 00 Number of Cycles at 60 Hz 0 000 000 00 0. f =.0 MHz V sig = 50 mvp-p 0 00 Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 00 00 Instantaneous Forward Current (A) 0.0 0. T J = 50 C Pulse Width = 300 µs % Duty Cycle 0.0 0 0. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9.0 Instantaneous Forward Voltage (V) 0 0. 0.0 0. 0 00 t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Document Number: 88675 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 5-Jun-0 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

PACAGE OUTLINE DIMENSIONS in inches (millimeters) 0.45 (0.54) MAX. 0.370 (9.40) 0.360 (9.4) TO-220AB 0.54 (3.9) 0.48 (3.74) 0.3 (2.87) 0.03 (2.62) 0.85 (4.70) 0.75 (4.44) 0.055 (.39) 0.045 (.4) 45 REF. 0.404 (0.26) 0.384 (9.75) ITO-220AB 0.076 (.93) REF. 0.076 (.93) REF. 0.40 (3.56) DIA. 0.25 (3.7) DIA. 0.90 (4.83) 0.70 (4.32) 0.0 (2.79) 0.00 (2.54) 0.35 (3.43) DIA. 0.22 (3.08) DIA. 0.60 (4.06) 0.40 (3.56) 0.057 (.45) 0.045 (.4) 0.05 (2.67) 0.095 (2.4) PIN 2 3 0.635 (6.3) 0.625 (5.87) 0.035 (0.90) 0.028 (0.70) 0.04 (2.65) 0.096 (2.45) 0.205 (5.20) 0.95 (4.95) 0.45 (3.68) 0.35 (3.43) 0.350 (8.89) 0.330 (8.38).48 (29.6).8 (28.40) 0.560 (4.22) 0.530 (3.46) 0.022 (0.56) 0.04 (0.36) 0.603 (5.32) 0.573 (4.55) 0.0 (2.79) 0.00 (2.54) 0.600 (5.24) 0.580 (4.73) 0.560 (4.22) 0.530 (3.46) 0.057 (.45) 0.045 (.4) 0.025 (0.64) 0.05 (0.38) 0.05 (2.67) 0.095 (2.4) PIN 2 3 0.67 (7.04) 0.65 (6.54) 0.9 (4.85) 0.7 (4.35) 0.057 (.45) 0.045 (.4) 0.035 (0.89) 0.025 (0.64) 0.205 (5.2) 0.95 (4.95) 0.350 (8.89) 0.330 (8.38) 0.0 (2.79) 0.00 (2.54) 0.028 (0.7) 0.020 (0.5) TO-263AB 0.4 (0.45) 0.380 (9.65) 0.245 (6.22) MIN. 0.90 (4.83) 0.60 (4.06) 0.055 (.40) 0.045 (.4) Mounting Pad Layout 0.42 (0.66) MIN. 0.360 (9.4) 0.320 (8.3) 0.037 (0.940) 0.027 (0.686) 0.05 (2.67) 0.095 (2.4) 2 0.624 (5.85) 0.59 (5.00) 0.205 (5.20) 0.95 (4.95) 0.055 (.40) 0.047 (.9) 0 to 0.0 (0 to 0.254) 0.0 (2.79) 0.090 (2.29) 0.02 (0.53) 0.04 (0.36) 0.40 (3.56) 0.0 (2.79) 0.670 (7.02) 0.59 (5.00) 0.08 (2.032) MIN. 0.05 (2.67) 0.095 (2.4) 0.33 (8.38) MIN. 0.5 (3.8) MIN. www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88675 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 5-Jun-0

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