Dual CommonCathode Schottky Rectifier TO0AB ITO0AB FEATURES Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop High forward surge capability MBR5xxCT PIN 3 CASE 3 TO63AB 3 MBRF5xxCT PIN 3 High frequency operation Meets MSL level, per JSTD00, LF maximum peak of 45 C (for TO63AB package) Solder dip 60 C, 40 s (for TO0AB and ITO0AB package) Component in accordance to RoHS 00/95/EC and WEEE 00/96/EC MBRB5xxCT HEATSIN PRIMARY CHARACTERISTICS I F(AV) 7.5 A x V RRM 35 V to 60 V I FSM 50 A V F 0.57 V, 0.65 V T J max. 50 C TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dctodc converters or polarity protection application. MECHANICAL DATA Case: TO0AB, ITO0AB, TO63AB Epoxy meets UL 94V0 flammability rating Terminals: Matte tin plated leads, solderable per JSTD00 and JESDB0 E3 suffix for consumer grade, meets JESD 0 class A whisker test, HE3 suffix for high reliability grade (AEC Q0 qualified), meets JESD 0 class whisker test Polarity: As marked Mounting Torque: 0 inlbs maximum MAXIMUM RATINGS (T C = 5 C unless otherwise noted) PARAMETER SYMBOL MBR535CT MBR545CT MBR550CT MBR560CT UNIT Maximum repetitive peak reverse voltage V RRM 35 45 50 60 V Working peak reverse voltage V RWM 35 45 50 60 V Maximum DC blocking voltage V DC 35 45 50 60 V Maximum average forward rectified current at T C = 05 C total device per diode I F(AV) 5 7.5 A Peak forward surge current 8.3 ms single half sinewave superimposed on rated load per diode Peak repetitive reverse surge current per diode at t p =.0 µs, khz I FSM 50 A I RRM.0 0.5 A Voltage rate of change (rated V R ) dv/dt 0 000 V/µs Operating junction temperature range T J 65 to + 50 C
MAXIMUM RATINGS (T C = 5 C unless otherwise noted) PARAMETER SYMBOL MBR535CT MBR545CT MBR550CT MBR560CT UNIT Storage temperature range T STG 65 to + 75 C Isolation voltage (ITO0AB only) from terminal to heatsink t = min V AC 500 V ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MBR535CT MBR545CT MBR550CT MBR560CT UNIT Maximum instantaneous forward voltage per diode () I F = 7.5 A I F = 7.5 A I F = 5 A I F = 5 A T C = 5 C T C = 5 C T C = 5 C T C = 5 C V F 0.57 0.84 0.7 0.75 0.65 V Maximum instantaneous reverse current at rated DC blocking voltage per diode () T C = 5 C T C = 5 C I R 0. 5.0 50 ma Note: () Pulse test: 300 µs pulse width, % duty cycle THERMAL CHARACTERISTICS (T C = 5 C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT Maximum thermal resistance per diode R θja R θjc 60 3.0 5.0 60 3.0 C/W ORDERING INFORMATION (Example) PACAGE PREFERRED P/N UNIT WEIGHT (g) PACAGE CODE BASE QUANTITY DELIVERY MODE TO0AB MBR545CTE3/45.85 45 50/tube Tube ITO0AB MBRF545CTE3/45.99 45 50/tube Tube TO63AB MBRB545CTE3/45.35 45 50/tube Tube TO63AB MBRB545CTE3/8.35 8 800/reel Tape reel TO0AB MBR545CTHE3/45 ().85 45 50/tube Tube ITO0AB MBRF545CTHE3/45 ().99 45 50/tube Tube TO63AB MBRB545CTHE3/45 ().35 45 50/tube Tube TO63AB MBRB545CTHE3/8 ().35 8 800/reel Tape reel Note: () Automotive grade AEC Q0 qualified
Average Forward Current (A) Transient Thermal Impedance ( C/W) Junction Capacitance (pf) RATINGS AND CHARACTERISTICS CURVES (T A = 5 C unless otherwise noted) 5 Resistive or Inductive Load 0 5 0 5 0 0 50 00 50 Case Temperature ( C) Instantaneous Reverse Current (ma) 00 0 0. 0.0 MBR535CT MBR545CT MBR550CT & MBR560CT T J = 5 C T J = 75 C T J = 5 C 0.00 0 0 40 60 80 00 Percent of Rated Peak Reverse Voltage (%) Figure. Forward Current Derating Curve Figure 4. Typical Reverse Characteristics Per Diode Peak Forward Surge Current (A) 75 50 5 00 75 50 T J = T J Max. 8.3 ms Single Half SineWave 0 000 000 00 MBR535CT MBR545CT MBR550CT & MBR560CT T J = 5 C f =.0 MHz V sig = 50 mvpp 5 0 00 Number of Cycles at 60 Hz 0 0. 0 00 Reverse Voltage (V) Figure. Maximum NonRepetitive Peak Forward Surge Current Per Diode Figure 5. Typical Junction Capacitance Per Diode 00 00 Instantaneous Forward Current (A) 0 0. T J = 5 C Pulse Width = 300 µs % Duty Cycle T J = 5 C MBR535CT MBR545CT MBR550CT & MBR560CT 0 0.0 0 0. 0. 0.3 0.4 0.5 0.6 0.7 0.8 0.9.0.. Instantaneous Forward Voltage (V) 0. 0.0 0. 0 00 t Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 3
PACAGE OUTLINE DIMENSIONS in inches (millimeters) 0.45 (0.54) MAX. 0.370 (9.40) 0.360 (9.4) TO0AB 0.54 (3.9) 0.48 (3.74) 0.3 (.87) 0.03 (.6) 0.85 (4.70) 0.75 (4.44) 0.055 (.39) 0.045 (.4) 45 REF. 0.404 (0.6) 0.384 (9.75) ITO0AB 0.076 (.93) REF. 0.076 (.93) REF. 0.40 (3.56) DIA. 0.5 (3.7) DIA. 0.90 (4.83) 0.70 (4.3) 0.0 (.79) 0.00 (.54) 0.35 (3.43) DIA. 0. (3.08) DIA. 0.60 (4.06) 0.40 (3.56) 0.057 (.45) 0.045 (.4) 0.05 (.67) 0.095 (.4) PIN 3 0.635 (6.3) 0.65 (5.87) 0.035 (0.90) 0.08 (0.70) 0.04 (.65) 0.096 (.45) 0.05 (5.0) 0.95 (4.95) 0.45 (3.68) 0.35 (3.43) 0.350 (8.89) 0.330 (8.38).48 (9.6).8 (8.40) 0.560 (4.) 0.530 (3.46) 0.0 (0.56) 0.04 (0.36) 0.603 (5.3) 0.573 (4.55) 0.0 (.79) 0.00 (.54) 0.600 (5.4) 0.580 (4.73) 0.560 (4.) 0.530 (3.46) 0.057 (.45) 0.045 (.4) 0.05 (0.64) 0.05 (0.38) 0.05 (.67) 0.095 (.4) PIN 3 0.67 (7.04) 0.65 (6.54) 0.9 (4.85) 0.7 (4.35) 0.057 (.45) 0.045 (.4) 0.035 (0.89) 0.05 (0.64) 0.05 (5.) 0.95 (4.95) 0.350 (8.89) 0.330 (8.38) 0.0 (.79) 0.00 (.54) 0.08 (0.7) 0.00 (0.5) TO63AB 0.4 (0.45) 0.380 (9.65) 0.45 (6.) MIN. 0.90 (4.83) 0.60 (4.06) 0.055 (.40) 0.045 (.4) Mounting Pad Layout 0.4 (0.66) MIN. 0.360 (9.4) 0.30 (8.3) 0.037 (0.940) 0.07 (0.686) 0.05 (.67) 0.095 (.4) 0.64 (5.85) 0.59 (5.00) 0.05 (5.0) 0.95 (4.95) 0.055 (.40) 0.047 (.9) 0 to 0.0 (0 to 0.54) 0.0 (.79) 0.090 (.9) 0.0 (0.53) 0.04 (0.36) 0.40 (3.56) 0.0 (.79) 0.670 (7.0) 0.59 (5.00) 0.08 (.03) MIN. 0.05 (.67) 0.095 (.4) 0.33 (8.38) MIN. 0.5 (3.8) MIN. 4
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