Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N These Devices are Pb Free and are RoHS Compliant Applications Power Management Load Switch Level Shift Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA s, Video Games, Hand Held Computers, etc. MAXIMUM RATINGS (T J = 5 C unless otherwise stated) Parameter Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS ± V Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State = 5 C I D 8 ma Steady State = 5 C P D mw Pulsed Drain Current t P s I DM 74 ma Operating Junction and Storage Temperature T J, T STG 55 to 5 Continuous Source Current (Body Diode) I SD 8 ma Lead Temperature for Soldering Purposes (/8 from case for s) C T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction to Ambient Steady State (Note ) R JA 46 C/W. Surface mounted on FR4 board using in sq. pad size (Cu area =.7 in sq. [ oz] including traces). V (BR)DSS R DS(on) Typ @ V GS I D MAX (Note ) V.5 @ 4.5 V 8 ma. @.5 V Gate Source SC 75 / SOT 46 CASE 46 STYLE 5 N Channel SC 75 ( Leads) (Top View) PIN CONNECTIONS Drain MARKING DIAGRAM TF M TF = Specific Device Code M = Date Code = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, October, Rev. Publication Order Number: NTA4N/D
ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS, I D = A V Zero Gate Voltage Drain Current I DSS, V DS = V. A Gate to Source Leakage Current I GSS V DS = V, V GS = ± V ± A ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V DS = V, I D = A.5..5 V Drain to Source On Resistance R DS(on), I D = ma.5. V GS =.5 V, I D = ma..5 Forward Transconductance g FS V DS = V, I D = ma 8 ms CAPACITANCES Input Capacitance C ISS.5 Output Capacitance C OSS V DS = 5 V, f = MHz, 5 Reverse Transfer Capacitance C RSS.5 6. SWITCHING CHARACTERISTICS (Note ) Turn On Delay Time Rise Time t r, V DS = 5 V, 5 Turn Off Delay Time t d(off) I D = ma, R G = 98 Fall Time t f 6 t d(on) pf ns DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD, I S = ma.66.8 V. Pulse Test: pulse width s, duty cycle %.. Switching characteristics are independent of operating junction temperatures. ns
TYPICAL PERFORMANCE CURVES..8.6.4...6. V GS = 5 V V GS =.8 V V GS =.4 V. V GS =. V V GS = V V GS =.4 V.4.8..6 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure. On region Characteristics T J = 5 C..6. VDS = 5 V T J = 5 C T J = 55 C.6.8..4.6.8 V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics T J = 5 C RESISTANCE ( ).5.5 T J = 5 C T J = 5 C T J = 55 C RESISTANCE ( ).5.5 T J = 5 C V GS =.5 V.5.5..5. Figure. On resistance versus Drain Current and Temperature.5.5..5. Figure 4. On resistance versus Drain Current and Gate Voltage RESISTANCE (NORMALIZED).8.6.4..8.6.4. I D =. A 5 5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( C) Figure 5. On resistance Variation with Temperature I DSS, LEAKAGE (na) T J = 5 C T J = 5 C 5 5 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 6. Drain to Source Leakage Current versus Voltage
TYPICAL PERFORMANCE CURVES C, CAPACITANCE (pf) 5 5 Ciss Crss T J = 5 C 5 Crss VDS = V 5 5 5 V GS VDS GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Ciss Coss t, TIME (ns) V DD = 5 V I D = ma t d(off) t f t r t d(on) R G, GATE RESISTANCE ( ) Figure 8. Resistive Switching Time Variation versus Gate Resistance I S, SOURCE CURRENT (A)..6. T J = 5 C.5.55.6.65.7.75.8 V SD, SOURCE TO DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current ORDERING INFORMATION Order Number Package Shipping NTA4NTG NVA4NTG SC 75 (Pb Free) SC 75 (Pb Free) / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 4
PACKAGE DIMENSIONS SC 75 / SOT 46 CASE 46 ISSUE F b PL. (.8) M D C E L e D H E A A. (.8) E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.7.8.9.7..5 A..5....4 b.5...6.8. C..5.5.4.6. D.55.6.65.59.6.67 E.7.8.9.7..5 e. BSC BSC L..5..4.6.8 H E.5.6.7.6.6.65 STYLE 5: PIN. GATE. SOURCE. DRAIN SOLDERING FOOTPRINT*.56.8.7.787..58...9 SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: 675 75 or 8 44 86 Toll Free USA/Canada Fax: 675 76 or 8 44 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 79 9 Japan Customer Focus Center Phone: 8 587 5 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTA4N/D