65V A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) A V CE(sat) (Typ.).6V P D 234W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching Loss & Soft Switching 4) Pb - free Lead Plating ; RoHS Compliant Inner Circuit () (2) (3) () Gate (2) Collector (3) Emitter Applications PFC Packaging Specifications Packaging Tube UPS Power Conditioner IH Type Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 45 Packing code Marking C Absolute Maximum Ratings (at T C = 25 C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage V CES 65 V Gate - Emitter Voltage V GES 3 V Collector Current T C = 25 C I C 7 A T C = C I C A Pulsed Collector Current I CP * A Power Dissipation T C = 25 C P D 234 W T C = C P D 7 W Operating Junction Temperature T j to +75 C Storage Temperature T stg 55 to +75 C * Pulse width limited by T jmax. /9 5. - Rev.C
Thermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case R θ(j-c) - -.64 C/W IGBT Electrical Characteristics (at T j = 25 C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BV CES I C = μa, V GE = V 65 - - V Collector Cut - off Current I CES V CE = 65V, V GE = V - - μa Gate - Emitter Leakage Current I GES V GE = 3V, V CE = V - - na Gate - Emitter Threshold Voltage V GE(th) V CE = 5V, I C = 27.6mA 4.5 5.5 6.5 V Collector - Emitter Saturation Voltage V CE(sat) I C = A, V GE = 5V T j = 25 C -.6 2. T j = 75 C - 2. - V 2/9 5. - Rev.C
IGBT Electrical Characteristics (at T j = 25 C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input Capacitance C ies V CE = 3V - 22 - Output Capacitance C oes V GE = V - 85 - pf Reverse Transfer Capacitance C res f = MHz - 35 - Total Gate Charge Q g V CE = 3V - 79 - Gate - Emitter Charge Q ge I C = A - 2 - nc Gate - Collector Charge Q gc V GE = 5V - 29 - Turn - on Delay Time t d(on) I C = A, V CC = V - 34 - Rise Time t r V GE = 5V, R G = Ω - 5 - Turn - off Delay Time t d(off) T j = 25 C - - ns Fall Time t f Inductive Load - 47 - Turn - on Delay Time t d(on) I C = A, V CC = V - 34 - Rise Time t r V GE = 5V, R G = Ω - 5 - Turn - off Delay Time t d(off) T j = 75 C - 35 - ns Fall Time t f Inductive Load - 59 - I C = A, V CC = 5V Reverse Bias Safe Operating Area RBSOA V P = 65V, V GE = 5V FULL SQUARE - R G = Ω, T j = 75 C 3/9 5. - Rev.C
Electrical Characteristic Curves Fig. Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature Power Dissipation : P D [W] 2 2 2 8 8 25 5 75 25 5 75 8 7 5 3 T j 75ºC V GE 5V 25 5 75 25 5 75 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area µs 8.. T C = 25ºC Single Pulse µs 8 T j 75ºC V GE =5V 8 Collector To Emitter Voltage : V CE [V] Collector To Emitter Voltage : V CE [V] 4/9 5. - Rev.C
Electrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 8 T j = 25ºC V GE = V V GE = 5V V GE = 2V V GE = V V GE = 8V 8 T j = 75ºC V GE = V V GE = 5V V GE = 2V V GE = V V GE = 8V 2 3 4 5 2 3 4 5 Collector To Emitter Voltage : V CE [V] Collector To Emitter Voltage : V CE [V] Fig.7 Typical Transfer Characteristics V CE = V 5 3 T j = 75ºC T j = 25ºC 2 4 6 8 2 Gate To Emitter Voltage : V GE [V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature Collector To Emitter Saturation Voltage : V CE(sat) [V] 4 3 2 V GE = 5V I C = 8A I C = A I C = A 25 5 75 25 5 75 Junction Temperature : T j [ºC] 5/9 5. - Rev.C
Electrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : V CE(sat) [V] 5 5 I C = 8A I C = A I C = A T j = 25ºC 5 5 Fig. Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : V CE(sat) [V] 5 5 I C = 8A I C = A I C = A T j = 75ºC 5 5 Gate To Emitter Voltage : V GE [V] Gate To Emitter Voltage : V GE [V] Fig. Typical Switching Time vs. Collector Current Fig.2 Typical Switching Time vs. Gate Resistance Switching Time [ns] t d(off) t f t d(on) Switching Time [ns] t d(off) t f t r V CC =V, V GE =5V R G =Ω, T j =75ºC t r Inductive load 3 5 7 8 t d(on) V CC =V, I C =A V GE =5V, T j =75ºC Inductive load 3 5 Gate Resistance : R G [Ω] 6/9 5. - Rev.C
Electrical Characteristic Curves Fig.3 Typical Switching Energy Losses vs. Collector Current Fig.4 Typical Switching Energy Losses vs. Gate Resistance Switching Energy Losses [mj].. E off E on V CC =V, V GE =5V R G =Ω, T j =75ºC Inductive load 3 5 7 8 Switching Energy Losses [mj].. E off E on V CC =V, I C =A V GE =5V, T j =75ºC Inductive load 3 5 Gate Resistance : R G [Ω] Fig.5 Typical Capacitance vs. Collector To Emitter Voltage 5 Fig.6 Typical Gate Charge Capacitance [pf] Cres Cies Coes f=mhz V GE =V T j =25ºC.. Gate To Emitter Voltage : V GE [V] 5 V CC =3V I C =A T j =25ºC 3 5 7 8 Collector To Emitter Voltage : V CE [V] Gate Charge : Q g [nc] 7/9 5. - Rev.C
Electrical Characteristic Curves Fig.7 IGBT Transient Thermal Impedance Transient Thermal Impedance : Z thjc [ºC/W]...2 D=.5. Single Pulse Duty=t/t2.2.5 Peak T j =P DM Z thjc T C..... P DM t t2 Pulse Width : t[s] 8/9 5. - Rev.C
Inductive Load Switching Circuit and Waveform Gate Drive Time 9% D.U.T. V GE % VG 9% Fig.8 Inductive Load Circuit I C % t d(on) t r t d(off) t f t on t off V CE V CE(sat) Fig.9 Inductive Load Waveform 9/9 5. - Rev.C
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