NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable Pb Free Packages are Available Applications Load/Power Switches Power Supply Converter Circuits Battery Management Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc. MAXIMUM RATINGS (T J = 5 C unless otherwise stated) Parameter Symbol Value Units Drain to Source Voltage V DSS V Gate to Source Voltage V GS ±6. V Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State T A = 5 C I D 95 ma T A = 85 C 66 Steady State P D mw Pulsed Drain Current t p = s I DM. A Operating Junction and Storage Temperature T J, T STG 55 to 5 Continuous Source Current (Body Diode) I S 8 ma Lead Temperature for Soldering Purposes (/8 from case for s) THERMAL RESISTANCE RATINGS C T L 6 C Parameter Symbol Value Units Junction to Ambient Steady State (Note ) SC 75 / SOT 46 SC 89 R JA 46 4 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Surface mounted on FR4 board using in sq pad size (Cu area =.7 in sq [ oz] including traces). V (BR)DSS V Gate Source SC 75 / SOT 46 CASE 46 STYLE 5 R DS(on) TYP.7 @ 4.5 V.7 @.5 V @.8 V.5 @.5 V N Channel MOSFET SC 75, SC 89 Top View I D MAX 95 ma MARKING DIAGRAM & PIN ASSIGNMENT Drain XX M SC 89 CASE 46C Gate Source XX = Device Code M = Date Code* = Pb Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Drain ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 4 December, 4 Rev. 7 Publication Order Number: NTA45N/D
NTA45N, NTE45N, NVA45N, NVE45N ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = 5 A 6 V Drain to Source Breakdown Voltage Temperature Coefficient V (BR)DSS /T J 8.4 mv/ C Zero Gate Voltage Drain Current I DSS V GS = V, V DS = 6 V na Gate to Source Leakage Current I GSS V DS = V, V GS = ±4.5 V ±. A ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 5 A 5.76. V Negative Threshold Temperature Coefficient V GS(TH) /T J.5 mv/ C Drain to Source On Resistance R DS(on) V GS = 4.5 V, I D = 6 ma 7 m V GS =.5 V, I D = 5 ma 7 75 V GS =.8 V, I D = 5 ma 4 7 V GS =.5 V, I D = 4 ma 5 95 Forward Transconductance g FS V DS = V, I D = 4 ma.4 S CHARGES AND CAPACITANCES Input Capacitance C ISS pf Output Capacitance C OSS V GS = V, f =. MHz, V DS = 6 V 6 Reverse Transfer Capacitance C RSS Total Gate Charge Q G(TOT).8 nc Threshold Gate Charge Q G(TH) V GS = 4.5 V, V DS = V,. Gate to Source Charge Q GS I D =. A. Gate to Drain Charge Q GD SWITCHING CHARACTERISTICS (Note ) Turn On Delay Time t d(on).7 ns Rise Time t r V GS = 4.5 V, V DD = V, 4.4 Turn Off Delay Time t d(off) I D =. A, R G = 5 Fall Time t f 7.6 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD VGS = V, I S = ma T J = 5 C 7. V T J = 5 C.54 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Pulse Test: pulse width s, duty cycle %.. Switching characteristics are independent of operating junction temperatures.
NTA45N, NTE45N, NVA45N, NVE45N TYPICAL ELECTRICAL CHARACTERISTICS.. V. V GS =.6 V to 5. V.8.8 V..6 V.4 V.5..5..5..5 4. V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure. On Region Characteristics. V DS V..8 T J = 5 C T J = 5 C. T J = 55 C.8..6. V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( )... V GS = 4.5 V T J = 5 C T J = 5 C T J = 55 C....5.7 R DS(on), DRAIN TO SOURCE RESISTANCE ( )... V GS =.5 V T J = 5 C T J = 5 C T J = 55 C....5.7 Figure. On Resistance vs. Drain Current and Temperature Figure 4. On Resistance vs. Drain Current and Temperature R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED).6.4...8 I D =.5 A V GS = 4.5 V C, CAPACITANCE (pf) 6 8 4 T J = 5 C V GS = V C ISS C OSS 5 5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( C) Figure 5. On Resistance Variation with Temperature C RSS 4 8 6 DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance Variation
NTA45N, NTE45N, NVA45N, NVE45N TYPICAL ELECTRICAL CHARACTERISTICS V GS, GATE TO SOURCE VOLTAGE (VOLTS) 5 4 Q GS Q GD Q T I D =. A T A = 5 C.8..6 Q G, TOTAL GATE CHARGE (nc). I S, SOURCE CURRENT (AMPS) V GS = V.5.. T J = 5 C. T J = 5 C..8 V SD, SOURCE TO DRAIN VOLTAGE (VOLTS) Figure 7. Gate to Source Voltage vs. Total Gate Charge Figure 8. Diode Forward Voltage vs. Current r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE. D =.5....5... SINGLE PULSE....... t, TIME (s) Figure 9. Normalized Thermal Response ORDERING INFORMATION Device Marking Package Shipping NTA45NT TR SC 75 / SOT 46 / Tape & Reel NTA45NTG TR SC 75 / SOT 46 / Tape & Reel NTE45NTG TP SC 89 NVA45NTG VR SC 75 / SOT 46 NVE45NTG VP SC 89 / Tape & Reel / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 4
NTA45N, NTE45N, NVA45N, NVE45N PACKAGE DIMENSIONS SC 75/SOT 46 CASE 46 ISSUE F b PL. (.8) M D E e D H E. (.8) E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.7.8.9.7..5 A..5....4 b.5...6.8. C..5.5.4.6. D.55.6.65.59.6.67 E.7.8.9.7..5 e. BSC.4 BSC L..5..4.6.8 H E.5.6.7.6.6.65 C L A A STYLE 5: PIN. GATE. SOURCE. DRAIN SOLDERING FOOTPRINT*.56.4.8.7.787..58...9 SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 5
NTA45N, NTE45N, NVA45N, NVE45N PACKAGE DIMENSIONS SC 89 CASE 46C ISSUE C M K A X G PL B Y S D PL.8 (.) M X C Y J N NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: MILLIMETERS. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 46C OBSOLETE, NEW STANDARD 46C. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.5.6.7.59.6.67 B.75.85.95..4.4 C.7.8.4.8. D..8..9.. G.5 BSC. BSC H.5 REF. REF J..5..4.6.8 K..5..6. L. REF.4 REF M N S.5.6.7.59.6.67 T SEATING PLANE SOLDERING FOOTPRINT*.5..5...4..9 SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: 675 75 or 8 44 86 Toll Free USA/Canada Fax: 675 76 or 8 44 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 79 9 Japan Customer Focus Center Phone: 8 587 5 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTA45N/D