FCH04N65EF N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 4 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 36 mω Ultra Low Gate Charge (Typ. Q g = 229 nc) Low Effective Output Capacitance (Typ. C oss(eff.) = 63 pf) 0% Avalanche Tested RoHS Compliant Applications LCD / LED / PDP TV Telecom / Server Power Supplies Solar Inverter AC - DC Power Supply Description SuperFET II MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET MOSFET s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D G G D S TO-247 long leads S Absolute Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Parameter FCH04N65EF-F55 Unit V DSS Drain to Source Voltage 650 V V GSS I D Gate to Source Voltage Drain Current Thermal Characteristics - DC ±20 - AC (f > Hz) ±30 - Continuous (T C = 25 o C) 76 - Continuous (T C = 0 o C) 48. I DM Drain Current - Pulsed (Note ) 228 A E AS Single Pulsed Avalanche Energy (Note 2) 2025 mj I AR Avalanche Current (Note ) 5 A E AR Repetitive Avalanche Energy (Note ) 5.95 mj dv/dt P D MOSFET dv/dt 0 Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation (T C = 25 o C) 595 W V A V/ns - Derate Above 25 o C 4.76 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 Seconds 300 o C Symbol Parameter FCH04N65EF-F55 Unit R θjc Thermal Resistance, Junction to Case, Max. 0.2 R θja Thermal Resistance, Junction to Ambient, Max. 40 206 Semiconductor Components Industries, LLC. September-207, Rev. 2 o C/W Publication Order Number: FCH04N65EF-F55/D
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCH04N65EF-F55 FCH04N65EF TO-247 G03 Tube N/A N/A 30 units Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics V GS = 0 V, I D = ma, T J = 25 C 650 - - BV DSS Drain to Source Breakdown Voltage V V GS = 0 V, I D = ma, T J = 50 C 700 - - ΔBV DSS Breakdown Voltage Temperature I / ΔT J Coefficient D = ma, Referenced to 25 o C - 0.72 - V/ o C V DS = 650 V, V GS = 0 V - - I DSS Zero Gate Voltage Drain Current μa V DS = 520 V, T C = 25 o C - 45 - I GSS Gate to Body Leakage Current V GS = ±20 V, V DS = 0 V - - ±0 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D = 7.6 ma 3-5 V R DS(on) Static Drain to Source On Resistance V GS = V, I D = 38 A - 36 4 mω g FS Forward Transconductance V DS = 20 V, I D = 38 A - 7.7 - S Dynamic Characteristics C iss Input Capacitance - 9446 2560 pf V DS = 0 V, V GS = 0 V, C oss Output Capacitance - 366 490 pf f = MHz C rss Reverse Transfer Capacitance - 35 - pf C oss Output Capacitance V DS = 380 V, V GS = 0 V, f = MHz - 97 - pf C oss(eff.) Effective Output Capacitance V DS = 0 V to 400 V, V GS = 0 V - 63 - pf Q g(tot) Total Gate Charge at V V DS = 380 V, I D = 38 A, - 229 298 nc Q gs Gate to Source Gate Charge V GS = V - 50 - nc Q gd Gate to Drain Miller Charge (Note 4) - 90 - nc ESR Equivalent Series Resistance f = MHz - 0.6 - Ω Switching Characteristics t d(on) Turn-On Delay Time - 55 20 ns t r Turn-On Rise Time V DD = 380 V, I D = 38 A, - 65 40 ns t d(off) Turn-Off Delay Time V GS = V, R g = 4.7 Ω - 75 360 ns t f Turn-Off Fall Time (Note 4) - 48 6 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 76 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 228 A V SD Drain to Source Diode Forward Voltage V GS = 0 V, I SD = 38 A - -.2 V t rr Reverse Recovery Time V GS = 0 V, I SD = 38 A, - 207 - ns Q rr Reverse Recovery Charge di F /dt = 0 A/μs -.5 - μc Notes:. Repetitive rating: pulse width limited by maximum junction temperature. 2. I AS = 5 A, R G = 25 Ω, starting T J = 25 C. 3. I SD 38 A, di/dt 200 A/μs, V DD 380 V, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics ID, Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 500 0 V GS = 20.0V.0V 8.0V 7.0V 6.5V 6.0V 5.5V. 250μs Pulse Test 2. T C = 25 o C 0. V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics. V DS = 20V 2. 250μs Pulse Test 3 4 5 6 7 8 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.06 0.05 0.04 V GS = V V GS = 20V *Note: T C = 25 o C 0.03 0 40 80 20 60 200 240 I D, Drain Current [A] IS, Reverse Drain Current [A] ID, Drain Current[A] 200 0 00 0 0. 0.0 50 o C 25 o C 50 o C -55 o C 25 o C. V GS = 0V 2. 250μs Pulse Test 0.00 0.0 0.5.0.5 2.0 V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics 0000 000 00 C iss C oss 0 *Note:. V GS = 0V C rss 2. f = MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0. 0 00 V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics V DS = 30V V DS = 325V 8 V DS = 520V 6 4 2 *Note: I D = 38A 0 0 50 0 50 200 250 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage ID, Drain Current [A] Figure 7. Breakdown Voltage Variation vs. Temperature.5..05.00 0.95. V GS = 0V 2. I D = ma 0.90-75 -50-25 0 25 50 75 0 25 50 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 500 0 0. Operation in This Area is Limited by R DS(on) ms DC. T C = 25 o C 0μs μs 2. T J = 50 o C 3. Single Pulse 0.0 0 00 V DS, Drain-Source Voltage [V] RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] 2.5 2.0.5.0 Figure 8. On-Resistance Variation vs. Temperature 0.5. V GS = V 2. I D = 38A 0.0-75 -50-25 0 25 50 75 0 25 50 T J, Junction Temperature [ o C] 80 60 40 20 Figure. Maximum Drain Current vs. Case Temperature 0 25 50 75 0 25 50 T C, Case Temperature [ o C] Figure. Eoss vs. Drain to Source Voltage 52.0 4.6 E OSS, [μj] 3.2 20.8.4 0 0 0 200 300 400 500 600 700 V DS, Drain to Source Voltage [V] 4
Typical Performance Characteristics (Continued) Z θjc (t), Thermal Response [ o C/W] 0.5 0. 0.0 Figure 2. Transient Thermal Response Curve 0.5 0.2 0. 0.05 0.02 0.0 Single pulse. Z θjc (t) = 0.2 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.00-5 -4-3 -2-0 t, Rectangular Pulse Duration [sec] P DM t t 2 5
I G = const. Figure 5. Gate Charge Test Circuit & Waveform R L V V DS DS 90% V V GS DD R G V V GS DUT % V GS t d(on) t r t d(off) tf t on t off Figure 6. Resistive Switching Test Circuit & Waveforms V GS Figure 7. Unclamped Inductive Switching Test Circuit & Waveforms 6
V GS R G DUT I SD Driver + V DS _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 8. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7
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