SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base oltage CBO 8 5 3 dc Emitter Base oltage EBO dc Collector Current Continuous IC madc Total Device Dissipation @ Derate above 25 C PD 625 5. mw mw/ C 2 3 CASE 29 4, STYLE 7 TO 92 (TO 226AA) Total Device Dissipation @ TC = 25 C Derate above 25 C PD.5 2 Watt mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 55 to +5 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 2 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W ELECTRICAL CHARACTERISTICS ( unless otherwise noted) OFF CHARACTERISTICS Collector Emitter Breakdown oltage (IC = madc, IB = ) Collector Base Breakdown oltage (IC = µadc) Emitter Base Breakdown oltage (IE = Adc, IC = ) Collector Emitter Leakage Current (CES = 4 ) (CES = 2 ) (CES = 2, ) Characteristic Symbol Min Typ Max Unit (BR)CEO (BR)CBO (BR)EBO ICES 65 45 3 8 5 3 4. 4. 4. na µa Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996
ELECTRICAL CHARACTERISTICS ( unless otherwise noted) (Continued) ON CHARACTERISTICS DC Current Gain (IC = µadc, CE = ) (IC = madc, CE = ) (IC = madc, CE = ) Collector Emitter Saturation oltage (IC = madc, IB =.5 madc) (IC = madc, IB = see Note ) (IC = madc, IB = madc) Base Emitter Saturation oltage (IC = madc, IB =.5 madc) (IC = madc, IB = madc) Base Emitter On oltage (IC = madc, CE = dc) (IC = madc, CE = dc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (IC = ma, CE =, f = MHz) Output Capacitance (CB =, IC =, f =. MHz) Characteristic Symbol Min Typ Max Unit A B/557B/558B C A B/557B/558B C A B/557B/558B C hfe CE(sat) BE(sat) BE(on) ft 2 2 2 2 8 42.55 9 5 27 7 29 2 8 3.75.3 5..62 28 32 36 8 8 22 46 8.3.6.65 2 MHz Cob 3. 6. pf Noise Figure (IC = madc, CE =, RS = k, f =. khz, f = 2 Hz) NF db Small Signal Current Gain (IC = madc, CE =, f =. khz) /558 A B/557B/558B C hfe 25 25 25 24 45 22 33 6 9 26 9 Note : IC = madc on the constant base current characteristics, which yields the point IC = madc, CE =.. 2 Motorola Small Signal Transistors, FETs and Diodes Device Data
/ hfe, NORMALIZED DC CURRENT GAIN.5..7.5.3 CE = IC, COLLECTOR CURRENT (madc), OLTAGE (OLTS)..9.6.5.3. BE(sat) @ IC/IB = BE(on) @ CE = CE(sat) @ IC/IB =.5. 2 5 2..5. 2 5 IC, COLLECTOR CURRENT (madc) Figure. Normalized DC Current Gain Figure 2. Saturation and On oltages. CE, COLLECTOR EMITTER OLTAGE ().6.2 IC = ma IC = 2 ma IC = 5 ma.2.. IB, BASE CURRENT (ma) IC = 2 ma IC = ma 2 B, TEMPERATURE COEFFICIENT (m/ C) θ.2.6 2.4 2.8 55 C to +25 C. Figure 3. Collector Saturation Region Figure 4. Base Emitter Temperature Coefficient C, CAPACITANCE (pf) 7. 5. 3.. Cib Cob.6. 4. 6. 2 3 4 R, REERSE OLTAGE (OLTS) f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 4 3 2 5 8 6 4 3 2.5 IC, COLLECTOR CURRENT (madc) CE =. 3. 2 3 5 Figure 5. Capacitances Figure 6. Current Gain Bandwidth Product Motorola Small Signal Transistors, FETs and Diodes Device Data 3
. hfe, DC CURRENT GAIN (NORMALIZED)..5 CE =, OLTAGE (OLTS).6 BE(sat) @ IC/IB = BE @ CE = CE(sat) @ IC/IB =.. 2 5 2 IC, COLLECTOR CURRENT (AMP).5. 2 5 2 Figure 7. DC Current Gain Figure 8. On oltage CE, COLLECTOR EMITTER OLTAGE (OLTS).6.2 IC = ma 2 ma 5 ma ma 2 ma.2.5..5. IB, BASE CURRENT (ma) 2 B, TEMPERATURE COEFFICIENT (m/ C) θ..4.8 θb for BE 55 C to 25 C 2.2 2.6 3..5. 2 5 2 Figure 9. Collector Saturation Region Figure. Base Emitter Temperature Coefficient C, CAPACITANCE (pf) 4 2 Cib 8. 6. Cob 4...5. 2 5 R, REERSE OLTAGE (OLTS) f T, CURRENT GAIN BANDWIDTH PRODUCT 2 5 2 CE =. Figure. Capacitance Figure 2. Current Gain Bandwidth Product 4 Motorola Small Signal Transistors, FETs and Diodes Device Data
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)..7.5.3..7.5.3.2.. D =.5..5 SINGLE PULSE SINGLE PULSE.5. 5. P(pk) 2 5 2. k k 5. k k t, TIME (ms) t t2 DUTY CYCLE, D = t/t2 ZθJC(t) = (t) RθJC RθJC = 83.3 C/W MAX ZθJA(t) = r(t) RθJA RθJA = 2 C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) RθJC(t) Figure 3. Thermal Response 2 5. s BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 3 ms 3 45 65 CE, COLLECTOR EMITTER OLTAGE () The safe operating area curves indicate IC CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 4 is based upon TJ(pk) = 5 C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to % provided TJ(pk) 5 C. TJ(pk) may be calculated from the data in Figure 3. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. Figure 4. Active Region Safe Operating Area Motorola Small Signal Transistors, FETs and Diodes Device Data 5
PACKAGE DIMENSIONS SEATING PLANE R A X X H N F G P N B L K C D J SECTION X X NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.75 5 4.45 5.2 B.7 4.32 5.33 C 5.65 3.8 4.9 D.6.22.4.55 F.6.9.4.48 G.45.55.5.39 H.95.5 2.42 2.66 J.5.2.39.5 K. 2.7 L 5 6.35 N.8.5 4 2.66 P. 2.54 R.5 2.93.35 3.43 CASE 29 4 (TO 226AA) ISSUE AD STYLE 7: PIN. COLLECTOR 2. BASE 3. EMITTER 6 Motorola Small Signal Transistors, FETs and Diodes Device Data /D