Standard Module 3~ M = I = D FSM = I 3~ Bridge Part number Backside: isolated 4/5 8 /2 Features / dvantages: pplications: Package: --Pack Package with DCB ceramic Improved temperature and power cycling Planar passivated chips ery low forward voltage drop ery low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation oltage: 3 ~ Industry standard outline ohs compliant Soldering pins for PCB mounting Height: 7 mm Base plate: DCB ceramic educed weight dvanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Symbol SM M I I Definition = = J T = 5 C atings typ. max. 7 F forward voltage drop I = 3,4 F T C= C thermal resistance junction to case, K/W D max. non-repetitive reverse blocking voltage reverse current I = F Conditions 3 J F threshold voltage T J = 5 C,8 for power loss calculation only r F slope resistance 7,8 mω thjc thch max. repetitive reverse blocking voltage J bridge output current thermal resistance case to heatsink I F = 9 I F = 9 rectangular d = ⅓ P tot total power dissipation W J J T = 25 C I FSM max. forward surge current T J = 45 C = C J junction capacitance = 4 ; f = MHz 8 J C T J = 5 C I²t value for fusing T = 45 C T J = 5 C T = 5 C J J = = = min.,3 4,5,48,,5 Unit µ m K/W k²s k²s k²s k²s J pf 5 5 55,,7,3,2
Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal T J virtual junction temperature -4 5 C T op operation temperature -4 25 C Weight M D dspp/pp dspb/pb --Pack T stg storage temperature -4 25 C ISOL mounting torque 2 creepage distance on surface striking distance through air isolation voltage t = second t = minute terminal to terminal terminal to backside 5/ Hz, MS; I ISOL m, 2, 3 3 37 2,5 g Nm mm mm Date Code Prod. Index Part Number (Typ) Lot No.: yyww Data Matrix: Typ (-9), DC+Prod.Index (2-25), FKT# (2-3) leer (33), lfd.# (33-3) Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. Blister 24 4973 Equivalent Circuits for Simulation * on die level T = 5 C I J max threshold voltage,8 max slope resistance *, mω
Outlines --Pack,5 +,2 3, ±,5 2 2 3, 2 52 (see ) x45 * = = *4 *7 * *7 *4 2,2 7 2 8 3 9 4 5 3 max.,25 7 ±,25 35 3 5,5,75 ±,3,75 ±,3 4 Ø 2,5 Ø,,5 * 5 Ø 2, 5,5 *,5 *4 * *4 25 25,75 ±,3 25 25,75 ±,3 Marking on product ufdruck der Typenbezeichnung * Ø,8 ±,2 emarks / Bemerkungen:. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm 2. General tolerance / llgemeintoleranz : DIN ISO 278 -T-c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad 2 +,2 4/5 8 /2
5 5 Hz.8 x M 2 = I F [] 4 I FSM [] 4 3 T J = 45 C I 2 t 2 [ 2 s] T J = 45 C T J = 5 C T J = 5 C 2 T J = 25 C 5 C T J = 25 C.4..8..2.4. F [] 2-3 -2 - t [s] 4 t [ms] Fig. Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode Fig. 3 I 2 t vs. time per diode P tot [W] 32 24 DC =.5.4.33.7.8 thj :. KW.8 KW KW 2 KW 4 KW 8 KW I F()M [] 4 DC =.5.4.33.7.8 8 2 4 8 2 2 24 28 32 I dm [] 25 5 75 25 5 75 T [ C] 25 5 75 25 5 T C [ C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode.2..8 Z thjc. [K/W].4.2. t [ms] Fig. Transient thermal impedance junction to case vs. time per diode Constants for Z thjc calculation: i th (K/W) t i (s).7.4 2.23.25 3.235.45 4.423.242 5.228.