Standard Module = 1 M I = 56 A FA F =.98 Single Diode Part number Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 Planar passivated chips ery low leakage current ery low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Supplies for power equipment Input rectifiers for PWM inverter Battery power supplies Field supply for motors Isolation oltage: 36 ~ Industry standard outline ohs compliant Base plate: Copper internally B isolated Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Symbol SM M I I Definition = 1 = 1 T = 14 C atings typ. max. 15 F forward voltage drop I = 5 A 1.9 I F T C= 85 C thermal resistance junction to case.72 K/W FA F(MS) max. non-repetitive reverse blocking voltage reverse current I = F Conditions 5 A F threshold voltage T = 14 C.8 for power loss calculation only r F slope resistance.38 mω thjc thch max. repetitive reverse blocking voltage average forward current MS forward current thermal resistance case to heatsink I F = A I F = A 18 sine d =.5 P tot total power dissipation 16 W T = 125 C I FSM max. forward surge current t = 1 ms; (5 Hz), sine T = 45 C = t = 1 ms; (5 Hz), sine C T = 14 C I²t value for fusing t = 1 ms; (5 Hz), sine T = 45 C t = 1 ms; (5 Hz), sine T = 14 C T = 14 C min..24 C J junction capacitance = ; f = 1 MHz 762 = = = 1 1 3 1.24.98 1.17 56 15. 16.2 12.8 13.8 1.13 1.9 812.8 788.8 Unit ma ma A A K/W MA²s MA²s ²s ²s pf
Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal 6 A T virtual junction temperature -4 14 C T op operation temperature -4 125 C Weight M D M T dspp/app dspb/apb Y1 T stg storage temperature -4 125 C ISOL mounting torque 4.5 terminal torque 11 creepage distance on surface striking distance through air isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside 5/6 Hz, MS; I ISOL 1 ma 16. 25. 36 3 65 7 13 g Nm Nm mm mm Production Index (PI) Date Code () yywwaa Part Number Lot.No: xxxxxx Circuit Data Matrix: part no. (1-19), + PI (2-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. Box 2 46485 Similar Part Package oltage class MDO5-12N1 Y1-2-CU 12 MDO5-16N1 Y1-2-CU 16 MDO5-18N1 MDO5-2N1 Y1-2-CU Y1-2-CU 1 MDO5-22N1 Y1-2-CU 22 Equivalent Circuits for Simulation * on die level T = 14 C I max threshold voltage.8 max slope resistance *.19 mω
Outlines Y1 2x M8 52 + -1,4 49 1 15 ±1 43 22.5 35 28.5 5 2 3 4 5 6 7 38 6.2 8 92 2 3
1 1 I TSM 6 5 Hz 8 % M T = 45 C T = 14 C 1 7 I 2 t 1 6 A 2 s = T = 45 C I FAM 6 18 sin.1.1.1 1 t [s] Fig. 1 Surge overload current I FSM : Crest value, t: duration 1 5 1 t [ms] T = 14 C 1 Fig. 2 I 2 t versus time (1-1 ms) 2 25 5 75 1 125 15 T C Fig. 3 Maximum forward current at case temperature 12 P tot 6 [W] 2 18 sin thka K/W.3.7.12.2.3.4.6 16 1 12 I F 6 2 T = 125 C T = 25 C 2 6 25 5 75 1 125 15 I FAM T A.2.4.6.8 1. 1.2 1.4 1.6 F [] Fig. 4 Power dissipation vs. forward current and ambient temperature Fig. 5 Forward current I F versus F 32 2 2 P tot 16 [W] 12 Circuit B2 4xMDO5 L thka K/W.15.3.4.5.7.1.14 3 6 9 12 I dam 25 5 75 1 125 15 T A Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature. = resistive load, L = inductive load
P tot [W] 5 3 thka K/W.1.2.3.45.6.8.12 Circuit B6 6xMDO5 3 6 9 12 15 I dam 25 5 75 1 125 15 T A Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Z thjc [K/W].12.1.8.6.4.2 18. 1-3 1-2 1-1 1 1 1 1 2 t [s] Fig. 7 Transient thermal impedance junction to case thjc for various conduction angles d: d thjc (K/W).72 18.768.81.92.111 Constants for Z thjc calculation: i thi (K/W) t i (s) 1.35.54 2.186.98 3.432.54 4.67 12 Z thjk [K/W].14.12.1.8.6.4.2 18. 1-3 1-2 1-1 1 1 1 1 2 t [s] Fig. 8 Transient thermal impedance junction to heatsink thjk for various conduction angles d: d thjk (K/W).96 18.1.15.116.135 Constants for Z thjk calculation: i thi (K/W) t i (s) 1.35.54 2.186.98 3.432.54 4.67 12 5.24 12
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