IR MOSFET - StrongIRFET D V DSS 300V Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits G S R DS(on) typ. I D D max S G D TO-247AC 16m 19m A Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Pb-Free ; RoHS Compliant ; Halogen-Free G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity TO-247AC Tube 25 R DS(on), Drain-to -Source On Resistance (m ) 5 I D = 45A 125 85 65 45 T J = 125 C Drain Current (A) 75 50 I D, 25 T J = 25 C 25 5 2 4 6 8 12 14 16 18 20 V GS, Gate -to -Source Voltage (V) 0 25 50 75 125 150 175 T C, Case Temperature ( C) Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Maximum Drain Current vs. Case Temperature Final Datasheet Please read the important Notice and Warnings at the end of this document V2.1 www.infineon.com
Table of Contents Table of Contents Applications....... 1 Benefits........1 Ordering Table. 1 Table of Contents....2 1 Parameters 3 2 Maximum ratings, Thermal, and Avalanche characteristics 4 3 Electrical characteristics 5 4 Electrical characteristic diagrams 6 Package Information 14 Qualification Information 15 Revision History.. 16 Final Datasheet 2 V2.1
Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units V DS 300 V R DS(on) max 19 m I D A Final Datasheet 3 V2.1
Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at T J=25 C, unless otherwise specified) Parameter Symbol Conditions Values Unit Continuous Drain Current I D T C = 25 C, V GS @ V Continuous Drain Current I D T C = C, V GS @ V 71 A Pulsed Drain Current I DM T C = 25 C 375 Maximum Power Dissipation P D T C = 25 C 556 W Linear Derating Factor T C = 25 C 3.7 W/ C Peak Diode Recovery dv/dt T J = 175 C, I S = 22A, V DS = 150V 6.0 V/ns Gate-to-Source Voltage V GS - ± 20 V Operating Junction and T J - -55 to + 175 Storage Temperature Range T STG C Soldering Temperature, for seconds - - 300 (1.6mm from case) Mounting Torque, 6-32 or M3 Screw - - lbf in (1.1 N m) - Table 3 Thermal characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Junction-to-Case R JC T J approximately 90 C - - 0.27 Case-to-Sink, Flat Greased Surface R CS - - 0.24 - C/W Junction-to-Ambient R JA - - - 40 Table 4 Avalanche characteristics Parameter Symbol Values Unit Single Pulse Avalanche Energy E AS (Thermally limited) 1559 mj Avalanche Current I AR A See Fig 16, 17, 23a, 23b Repetitive Avalanche Energy E AR mj Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting T J = 25 C, L = 7.8mH, R G = 50, I AS = 20A, V GS = V. I SD 22A, di/dt 0A/µs, V DD V (BR)DSS, T J 175 C. Pulse width 400µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS. R is measured at T J approximately 90 C. Final Datasheet 4 V2.1
Electrical characteristics 3 Electrical characteristics Table 5 Static characteristics Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain-to-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 1mA 300 - - V Breakdown Voltage Temp. Coefficient V (BR)DSS/ T J Reference to 25 C, I D = 2.5mA - 0.12 - V/ C Static Drain-to-Source On-Resistance R DS(on) V GS = V, I D = 45A - 16 19 m Gate Threshold Voltage V GS(th) V DS = V GS, I D = 270µA 2.0-4.0 V V DS = 240V, V GS =0V - - Drain-to-Source Leakage Current I DSS V DS = 240V,V GS = 0V,T J =125 C - - 300 µa Gate-to-Source Forward Leakage I GSS V GS = 20V - - 200 na Gate Resistance R G - 1.3 - Table 6 Dynamic characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. Forward Trans conductance gfs V DS = 50V, I D = 45A 97 - - S Total Gate Charge Q g - 127 191 Gate-to-Source Charge Q gs I D = 45A - 44 - V DS = 150V Gate-to-Drain Charge Q gd V GS = V - 24 - Total Gate Charge Sync. (Qg Qgd) Q sync - 3 - Turn-On Delay Time t d(on) V DD = 150V - 25 - Rise Time t r I D = 45A - 44 - Turn-Off Delay Time t d(off) R G = 2.7-79 - Fall Time t f V GS = V - 32 - Input Capacitance C iss V GS = 0V - 30 - Output Capacitance C oss V DS = 50V - 863 - Reverse Transfer Capacitance C rss ƒ = 1.0MHz, See Fig.7-3.8 - Effective Output Capacitance (Energy Related) C oss eff.(er) V GS = 0V, V DS = 0V to 240V - 552 - Output Capacitance (Time Related) C oss eff.(tr) V GS = 0V, V DS = 0V to 240V - 961 - nc ns pf Table 7 Reverse Diode Values Parameter Symbol Conditions Unit Min. Typ. Max. Continuous Source Current MOSFET symbol D I S - - (Body Diode) showing the G A Pulsed Source Current integral reverse I SM S - - 375 (Body Diode) p-n junction diode. Diode Forward Voltage V SD T J = 25 C, I S = 45A,V GS = 0V - - 1.2 V T J = 25 C - 156 - Reverse Recovery Time t rr T J = 125 C - 215 - V T J = 25 C DD = 150V - 521 - Reverse Recovery Charge Q rr I F = 45A, T J = 125 C di/dt = A/µs - 1145 - T J = 25 C - 5.0 - Reverse Recovery Current I RRM T J = 125 C - 7.8 - ns nc A Final Datasheet 5 V2.1
Electrical characteristic diagrams 4 Electrical characteristic diagrams I D, Drain-to-Source Current (A) 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 60µs PULSE WIDTH Tj = 25 C 1 0.1 1 60µs PULSE WIDTH Tj = 175 C 1 0.1 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Figure 3 Typical Output Characteristics Figure 4 Typical Output Characteristics I D, Drain-to-Source Current (A) 0 1.0 T J = 175 C T J = 25 C V DS = 50V 60µs PULSE WIDTH R DS(on), Drain-to-Source On Resistance (Normalized) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 I D = 45A V GS = V 0. 2 3 4 5 6 7 V GS, Gate-to-Source Voltage (V) 0.0-60 -20 20 60 140 180 T J, Junction Temperature ( C) Figure 5 Typical Transfer Characteristics Figure 6 Normalized On-Resistance vs. Temperature Final Datasheet 6 V2.1
C, Capacitance (pf) Electrical characteristic diagrams 0000 000 00 0 V GS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C rss C iss C oss V GS, Gate-to-Source Voltage (V) 14 12 8 6 4 2 I D = 45A V DS = 60V V DS = 150V V DS = 240V 1 1 0 V DS, Drain-to-Source Voltage (V) 0 0 25 50 75 125 150 175 200 Q G, Total Gate Charge (nc) Figure 7 Typical Capacitance vs. Drain-to-Source Voltage Figure 8 Typical Gate Charge vs. Gate-to-Source Voltage 0 I SD, Reverse Drain Current (A) 1 T J = 175 C T J = 25 C V GS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 V SD, Source-to-Drain Voltage (V) Figure 9 Typical Source-Drain Diode Forward Voltage Final Datasheet 7 V2.1
V (BR)DSS, Electrical characteristic diagrams 0 I D, Drain-to-Source Current (A) µsec OPERATION IN THIS AREA LIMITED BY R DS (on) msec 1msec 1 Tc = 25 C Tj = 175 C Single Pulse 0.1 0.1 1 V DS, Drain-to-Source Voltage (V) DC Figure Maximum Safe Operating Area Drain-to-Source Breakdown Voltage (V) 360 350 Id = 2.5mA 25 20 340 330 320 Energy (µj) 15 3 5 300-60 -40-20 0 20 40 60 80 120 140 160 180 T J, Temperature ( C ) 0 0 50 150 200 250 300 350 V DS, Drain-to-Source Voltage (V) Figure 11 Drain-to-Source Breakdown Voltage Figure 12 Typical Coss Stored Energy Final Datasheet 8 V2.1
Electrical characteristic diagrams R DS (on), Drain-to -Source On Resistance (m ) 30 4.5 26 22 18 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = V Gate threshold Voltage (V) V GS(th), 4.0 3.5 3.0 2.5 2.0 1.5 I D = 270µA ID = 1.0mA I D = 1.0A 14 0 25 50 75 125 150 175 200 I D, Drain Current (A) 1.0-75 -50-25 0 25 50 75 125 150 175 T J, Temperature ( C ) Figure 13 Typical On-Resistance vs. Drain Current Figure 14 Threshold Voltage vs. Temperature 1 Thermal Response ( Z thjc ) C/W 0.1 0.01 D = 0.50 0.20 0. 0.05 0.02 0.01 0.001 SINGLE PULSE Notes: ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Figure 15 Maximum Effective Transient Thermal Impedance, Junction-to-Case Final Datasheet 9 V2.1
Avalanche Current (A) Electrical characteristic diagrams Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150 C and Tstart =25 C (Single Pulse) 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25 C and Tstart = 150 C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Figure 16 Avalanche Current vs. Pulse Width E AR, Avalanche Energy (mj) 1800 1600 1400 1200 0 800 600 400 200 0 TOP Single Pulse BOTTOM 1.0% Duty Cycle I D = 20A 25 50 75 125 150 175 Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 16, 17: (For further info, see AN-5 at www.infineon.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = tav f Z thjc(d, t av) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3 BV I av) = T/ Z thjc I av = 2 T/ [1.3 BV Z th] E AS (AR) = P D (ave) t av Figure 17 Maximum Avalanche Energy vs. Temperature Final Datasheet V2.1
Electrical characteristic diagrams I RRM (A) 70 60 50 40 30 I F = 30A V R = 150V T J = 25 C T J = 125 C I RRM (A) 80 70 60 50 40 30 I F = 45A V R = 150V T J = 25 C T J = 125 C 20 20 0 200 300 400 500 600 700 800 900 0 di F /dt (A/µs) 0 200 300 400 500 600 700 800 900 0 di F /dt (A/µs) Figure 18 Typical Recovery Current vs. dif/dt Figure 19 Typical Recovery Current vs. dif/dt Q RR (nc) 5000 4000 3000 2000 I F = 30A V R = 150V T J = 25 C T J = 125 C Q RR (nc) 6000 5000 4000 3000 I F = 45A V R = 150V T J = 25 C T J = 125 C 2000 0 0 0 200 300 400 500 600 700 800 900 0 di F /dt (A/µs) 0 200 300 400 500 600 700 800 900 0 di F /dt (A/µs) Figure 20 Typical Stored Charge vs. dif/dt Figure 21 Typical Stored Charge vs. dif/dt Final Datasheet 11 V2.1
Electrical characteristic diagrams Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Figure 23a Unclamped Inductive Test Circuit Figure 23b Unclamped Inductive Waveforms Final Datasheet 12 V2.1
Electrical characteristic diagrams Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms Figure 25a Gate Charge Test Circuit Figure 25b Gate Charge Waveform Final Datasheet 13 V2.1
Package Information 5 Package Information TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE30 135H 56 57 PART NUMBER DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Final Datasheet 14 V2.1
Qualification Information 6 Qualification Information Qualification Information Qualification Level Industrial (per JEDEC JESD47F) Moisture Sensitivity Level TO-247AC N/A RoHS Compliant Yes Applicable version of JEDEC standard at the time of product release. Final Datasheet 15 V2.1
Revision History Revision History Major changes since the last revision Page or Reference Revision Date Description of changes All pages 2.0 2017-11-14 First release data sheet. All pages 2.1 Datasheet updated with RTH from 0.48C/W to 0.27C/W -page 4 Corrected fig 2,,15,16,17 based on Rth change-page1, 8 & 9, Corrected I D /I S from 75A to A -page1,3,4 Corrected I DM /I SM from 300A to 375A, PD from 313W to 556W, Linear derating from 2.1W/C to 3.7W/C page 3 Final Datasheet 16 V2.1
Trademarks of Infineon Technologies AG µhvic, µipm, µpfc, AU-ConvertIR, AURIX, C166, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC, DAVE, DI-POL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR, HEXFET, HITFET, HybridPACK, imotion, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, my-d, NovalithIC, OPTIGA, OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PRO-SIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH, SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2015-05-06 Published by Infineon Technologies AG 81726 Munich, Germany 2016 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.