FDS899 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology for extremely low r DS(on) High power and current handling capability RoHS compliant SO-8 D D D D Pin General Description These N-Channel Logic Level MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications Inverter Power suppliers MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ± V Drain Current -Continuous (Note a) 6 I D -Pulsed E AS Drain-Source Avalanche Energy (Note 3) 6 mj Power Dissipation for Dual Operation P D Power Dissipation for Single Operation (Note a).6 W (Note b).9 T J, T STG Operating and Storage Junction Temperature Range -55 to 5 C Thermal Characteristics G S G S A R θja Thermal Resistance-Single operation, Junction to Ambient (Note a) 8 R θja Thermal Resistance-Single operation, Junction to Ambient (Note b) 35 R θjc Thermal Resistance, Junction to Case (Note ) Package Marking and Ordering Information C/W Device Marking Device Reel Size Tape Width Quantity FDS899 FDS899 3 mm 5 units 6 Semiconductor Components industries, LLC. October-7, Rev. Publication Order Number: FDS899/D
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 5µA, V GS = V V BV DSS T J Breakdown Voltage Temperature Coefficient I D = 5µA, referenced to 5 C 33 mv/ C V DS = 3V, V GS = V µa I DSS Zero Gate Voltage Drain Current T J = 55 C µa I GSS Gate to Source Leakage Current V GS = ±V,V DS = V ± na On Characteristics (Note ) V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5µA.9 3 V V GS(th) T J Gate to Source Threshold Voltage Temperature Coefficient I D = 5µA, referenced to 5 C -.6 mv/ C V GS = V, I D = 6A 9 r DS(on) Drain to Source On Resistance V GS =.5V, I D =.5A 6 36 mω V GS = V, I D = 6A,T J = 5 C 9 3 g FS Forward Transconductance V DS = V,I D = 6A S Dynamic Characteristics C iss Input Capacitance 75 955 pf V DS = V, V GS = V, C oss Output Capacitance 5 pf f = MHz C rss Reverse Transfer Capacitance 6 9 pf R g Gate Resistance f = MHz. Ω Switching Characteristics t d(on) Turn-On Delay Time 9 8 ns V DD = V, I D = A t r Rise Time 5 ns V GS = V, R GEN = 6Ω t d(off) Turn-Off Delay Time 3 37 ns t f Fall Time 3 6 ns Q g Total Gate Charge 7.7 nc Q gs Gate to Source Gate Charge V DS = V, I D = 6A,V GS = 5V. nc Q gd Gate to Drain Miller Charge.8 nc Drain-Source Diode Characteristics and Maximum Ratings V SD Source to Drain Diode Forward Voltage V GS = V, I S = 6A (note ).8. V t rr Reverse Recovery Time (note 3) 7 6 ns I F = 6A, d if /d t = A/µs Q rr Reverse Recovery Charge 7 nc Notes: : R θja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θja is determined by the user s board design. a) 8 C/W when mounted on a in pad of oz copper b) 35 C/W when mounted on a minimum pad. Scale : on letter size paper : Pulse Test: Pulse Width < 3 us, Duty Cycle <.%. 3: Starting T J = 5 C, L = mh, I AS = 7.3A, V DD = V, V GS = V.
Typical Characteristics T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 8 Figure 3. V GS = V V GS =.5V V GS = 3.5V V GS = 3.V DUTY CYCLE = %MAX..5..5..5.6....8 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On Region Characteristics I D = 6A V GS = V.6-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) Normalized On Resistance vs Junction Temperature NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rds(on), DRAIN TO 3..5..5. V GS = 3.V DUTY CYCLE = %MAX V GS = 3.5V V GS =.5V V GS = V.5 8 6 I D, DRAIN CURRENT(A) Figure. Normalized On-Resistance vs Drain Current and Gate Voltage SOURCE ON-RESISTANCE (mω) 7 6 5 3 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure. I D = 3.5A DUTY CYCLE = %MAX T J = 5 o C T J = 5 o C On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 6 8 DUTY CYCLE = %MAX T J = 5 o C.5..5 3. 3.5. V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics V DD = V T J = 5 o C T J = -55 o C IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = 5 o C T J = -55 o C E-3...6.8.. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 6 8 6 Q g, GATE CHARGE(nC) Figure 7. Figure 9. V DD = V V DD = V V DD = 3V CAPACITANCE (pf) 3 Gate Charge Characteristics Figure 8. T J = 5 o C T J = 5 o C. -3 - - 3 t AV, TIME IN AVALANCHE(ms) Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) C iss C oss C rss f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) 7 6 5 3 Figure. Capacitance vs Drain to Source Voltage V GS =.5V V GS = V R θja = 8 o C/W 5 5 75 5 5 T A, Ambient TEMPERATURE ( o C) Maximum Continuous Drain Current vs Ambient Temperature ID, DRAIN CURRENT (A). LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) TJ = MAX RATED us ms ms ms s T A = 5 o C DC... 3 V DS, DRAIN-SOURCE VOLTAGE (V) s ), PEAK TRANSIENT POWER (W) P(PK V GS = V R θja = 35 C/W T A = 5 C.7 - -3 - - 3 t, PULSE WIDTH (s) Figure. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power Dissipation
Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. DUTY FACTOR: D = t /t E-3-3 - - 3 t, RECTANGULAR PULSE DURATION (s) Figure 3. Transient Thermal Response Curve R θja (t) = r(t)*r θja R θja = 35 o C/W P (PK) t t T J -T A =P*R θja 5
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