Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 75 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) S D G TO-220AB AUIRL3705Z AUIRL3705Z AUIRL3705ZS AUIRL3705ZL HEXFET Power MOSFET 55V 6.5m 8.0m 86A 75A D S G D 2 Pak AUIRL3705ZS D S G D TO-262 AUIRL3705ZL G D S Gate Drain Source Base part number Package Type Standard Pack Form Quantity Orderable Part Number AUIRL3705Z TO-220 Tube 50 AUIRL3705Z AUIRL3705ZL TO-262 Tube 50 AUIRL3705ZL AUIRL3705ZS D 2 -Pak Tube 50 AUIRL3705ZS Tape and Reel Left 800 AUIRL3705ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V (Silicon Limited) 86 I D @ T C = C Continuous Drain Current, V GS @ V (Silicon Limited) 6 I D @ T C = 25 C Continuous Drain Current, V GS @ V (Package Limited) 75 A I DM Pulsed Drain Current 340 P D @T C = 25 C Maximum Power Dissipation 30 W Linear Derating Factor 0.88 W/ C V GS Gate-to-Source Voltage ± 6 V E AS Single Pulse Avalanche Energy (Thermally Limited) 20 E AS (tested) Single Pulse Avalanche Energy Tested Value 80 mj I AR Avalanche Current See Fig.5,6, 2a, 2b A E AR Repetitive Avalanche Energy mj T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 300 Mounting torque, 6-32 or M3 screw lbf in (.N m) Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.4 R CS Case-to-Sink, Flat, Greased Surface 0.50 R JA Junction-to-Ambient 62 C/W R JA Junction-to-Ambient ( PCB Mount, steady state) 40 HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 205--29
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.055 V/ C Reference to 25 C, I D = ma 6.5 8.0 V GS = V, I D = 52A R DS(on) Static Drain-to-Source On-Resistance m V GS = 5.0V, I D = 43A 2 VGS = 4.5V, ID = 30A V GS(th) Gate Threshold Voltage.0 3.0 V V DS = V GS, I D = 250µA gfs Forward Trans conductance 50 S V DS = 25V, I D = 52A I DSS Drain-to-Source Leakage Current 20 V DS = 55V, V GS = 0V µa 250 V DS = 55V,V GS = 0V,T J =25 C I GSS Gate-to-Source Forward Leakage 200 V GS = 6V na Gate-to-Source Reverse Leakage -200 V GS = -6V Dynamic Electrical Characteristics @ T J = 25 C (unless otherwise specified) Q g Total Gate Charge 40 60 I D = 43A Q gs Gate-to-Source Charge 2 nc V DS = 44V Q gd Gate-to-Drain Charge 2 V GS = 5.0V t d(on) Turn-On Delay Time 7 V DD = 28V t r Rise Time 240 I D = 43A ns t d(off) Turn-Off Delay Time 26 R G = 4.3 t f Fall Time 83 V GS = 5.0V Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 2880 V GS = 0V C oss Output Capacitance 420 V DS = 25V C rss Reverse Transfer Capacitance 220 ƒ =.0MHz pf C oss Output Capacitance 500 V GS = 0V, V DS =.0V ƒ =.0MHz C oss Output Capacitance 330 V GS = 0V, V DS = 44V ƒ =.0MHz C oss eff. Effective Output Capacitance 5 V GS = 0V, V DS = 0V to 44V Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 75 (Body Diode) showing the A Pulsed Source Current integral reverse I SM 340 (Body Diode) p-n junction diode. V SD Diode Forward Voltage.3 V T J = 25 C,I S = 52A,V GS = 0V t rr Reverse Recovery Time 6 24 ns T J = 25 C,I F = 43A, V DD = 28V Q rr Reverse Recovery Charge 7.4 nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.) Limited by T Jmax, starting T J = 25 C, L = 0.09mH, R G = 25, I AS = 52A, V GS =V. Part not recommended for use above this value. Pulse width.0ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Limited by T Jmax, see Fig.2a, 2b, 5, 6 for typical repetitive avalanche performance. This value determined from sample failure population % tested to this value in production. This is only applied to TO-220AB package. This is applied to D 2 Pak, When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at T J of approximately 90 C Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 205--29
I D, Drain-to-Source Current ) G fs, Forward Transconductance (S) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) 0 VGS TOP 2V V 8.0V 5.0V 4.5V 3.5V 3.0V BOTTOM 2.8V 0 VGS TOP 2V V 8.0V 5.0V 4.5V 3.5V 3.0V BOTTOM 2.8V 0. 2.8V 60µs PULSE WIDTH Tj = 25 C 0.0 0. 0 V DS, Drain-to-Source Voltage (V) 2.8V 60µs PULSE WIDTH Tj = 75 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics 0 20 T J = 75 C 80 T J = 25 C 60 T J = 75 C 0. T J = 25 C V DS = 5V 60µs PULSE WIDTH 0 2 4 6 8 2 4 6 40 20 0 V DS = 8.0V 0 20 40 60 80 20 V GS, Gate-to-Source Voltage (V) I D,Drain-to-Source Current (A) Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Transconductance vs. Drain Current 3 205--29
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) 000 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 6.0 5.0 I D = 52A V DS = 44V V DS = 28V V DS = V 00 4.0 C iss 3.0 0 C oss 2.0 C rss.0 0.0 0 20 30 40 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 0.00 0 OPERATION IN THIS AREA LIMITED BY R DS (on).00 T J = 75 C.00 T J = 25 C µsec V GS = 0V.00 0.0 0.5.0.5 2.0 V SD, Source-to-Drain Voltage (V) Tc = 25 C Tj = 75 C Single Pulse msec msec 0 V DS, Drain-to-Source Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 205--29
I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) 90 80 Limited By Package 2.0 I D = 43A V GS = 5.0V 70 60 50 40 30 20 0 25 50 75 25 50 75 T C, Case Temperature ( C).5.0 0.5-60 -40-20 0 20 40 60 80 20 40 60 80 T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Normalized On-Resistance vs. Temperature D = 0.50 Thermal Response ( Z thjc ) 0. 0.0 0.00 0.20 0. 0.05 0.02 0.0 SINGLE PULSE ( THERMAL RESPONSE ) J J 2 2 Ci= i Ri Ci= i Ri R R 2 R R 2 E-006 E-005 0.000 0.00 0.0 0. C C t, Rectangular Pulse Duration (sec) Ri ( C/W) i (sec) 0.543 0.000384 0.5985 0.002778 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 205--29
V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) 5V V DS L DRIVER 500 R G 20V tp D.U.T I AS 0.0 + - V DD A 400 300 I D TOP 5.7A 8.5A BOTTOM 52A Fig 2a. Unclamped Inductive Test Circuit tp V (BR)DSS 200 0 25 50 75 25 50 75 Starting T J, Junction Temperature ( C) I AS Fig 2b. Unclamped Inductive Waveforms Fig 2c. Maximum Avalanche Energy vs. Drain Current 3.0 2.5 Fig 3a. Gate Charge Test Circuit 2.0 I D = 250µA Vds Id.5 Vgs.0 Vgs(th) 0.5-75 -50-25 0 25 50 75 25 50 75 200 T J, Temperature ( C ) Qgs Qgs2 Qgd Qgodr Fig 4. Threshold Voltage vs. Temperature Fig 3b. Gate Charge Waveform 6 205--29
E AR, Avalanche Energy (mj) Duty Cycle = Single Pulse Avalanche Current (A) 0.0 0.05 0. Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses 0..0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 5. Avalanche Current vs. Pulse width 50 25 75 50 25 TOP Single Pulse BOTTOM % Duty Cycle I D = 52A Notes on Repetitive Avalanche Curves, Figures 5, 6: (For further info, see AN-5 at www.infineon.com). Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 2a, 2b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 4, 5). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav) = Transient thermal resistance, see Figures 3) 0 25 50 75 25 50 75 Starting T J, Junction Temperature ( C) P D (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E AS (AR) = P D (ave) t av Fig 6. Maximum Avalanche Energy vs. Temperature 7 205--29
Fig 7. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 8 205--29
TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number IR Logo AUL3705Z YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 205--29
D 2 Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak (TO-263AB) Part Marking Information Part Number IR Logo AUL3705ZS YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 205--29
TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number IR Logo AUL3705ZL YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 205--29
D 2 Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) 0.368 (.045) 0.342 (.035) FEED DIRECTION TRL.85 (.073).65 (.065).60 (.457).40 (.449) 5.42 (.609) 5.22 (.60) 24.30 (.957) 23.90 (.94).90 (.429).70 (.42) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) 27.40 (.079) 23.90 (.94) 4 330.00 (4.73) MAX. 60.00 (2.362) MIN. NOTES :. COMFORMS TO EIA-48. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (.039) 24.40 (.96) 3 30.40 (.97) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 2 205--29
Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Highest Compliant passing voltage. Automotive (per AEC-Q) Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 Pak N/A D 2 -Pak TO-262 MSL Class M4 (+/- 425V) AEC-Q-002 Class HC (+/- 2000V) AEC-Q-00 Class C5 (+/- 25V) AEC-Q-005 Yes Revision History Date Updated datasheet with corporate template /29/205 Corrected ordering table on page. Comments Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 205 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 3 205--29