_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching PWM Server power supply Charger
General Description uses advanced GreenMOS TM technology to provide low R DS(ON) low gate charge fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. V DS min@tjmax pulse R DS(ON) max @ VGS= V Q g 700 V 60 A 200 mω 24.8 nc Schematic and Package Information SCHEMATIC DIAGRAM D PIN ASSIGNMENT-TOP VIEW G S1 S2 G: Gate D: Drain S1: Driver Source S2: Power Source PDFN8 8 Absolute Maximum Ratings at T j=25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage V DS 650 V Gate source voltage V GS ±30 V Continuous drain current 1) T C=25 Continuous drain current 1) T C=0 12.5 20 A Pulsed drain current 2) T C=25 pulse 60 A Power dissipation 3) T C=25 P D 151 W Single pulsed avalanche energy 5) E AS 600 mj Single pulsed avalanche current 5) I AS.9 A Repetitive avalanche energy E AR 0.8 mj Repetitive avalanche current I AR.9 A MOSFET dv/dt ruggedness V DS=0 480 V dv/dt 50 V/ns Reverse diode dv/dt V DS=0 480 V I SD dv/dt 15 V/ns Operation and storage temperature T stgt j -55 to 150 Oriental Semiconductor Copyright reserved 2017 2 / 9
Thermal Characteristics Parameter Symbol Value Unit Thermal resistance junction-case R θjc 0.82 C/W Thermal resistance junction-ambient 4) R θja 62 C/W Electrical Characteristics at T j=25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition 650 V GS=0 V =250 μa Drain-source breakdown voltage BV DSS 700 774 V V GS=0 V =250 μa T j=150 Gate threshold voltage V GS(th) 2.9 3.9 V V DS=V GS =250 μa 0.16 0.2 V GS= V = A Drain-source on-state resistance R DS(ON) 0.42 Ω V GS= V = A T j=150 Gate-source leakage current I GSS 0 V GS=30 V na -0 V GS=-30 V Drain-source leakage current SS 1 μa V DS=650 V V GS=0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss 1433 pf Output capacitance C oss 925 pf Reverse transfer capacitance C rss 3.9 pf Turn-on delay time t d(on) 40.1 ns Rise time t r 49.8 ns Turn-off delay time t d(off) 57.3 ns Fall time t f 63.7 ns V GS=0 V V DS=50 V ƒ=1 MHz V GS= V V DS=520 V R G=25 Ω =20 A Oriental Semiconductor Copyright reserved 2017 3 / 9
Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g 24.8 nc Gate-source charge Q gs 7.2 nc Gate-drain charge Q gd 8.2 nc Gate plateau voltage V plateau 5.6 V =20 A V DS=520 V V GS= V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 20 Pulsed source current I SP 60 A V GS<V th Diode forward voltage V SD 1.4 V I S=20 A V GS=0 V Reverse recovery time t rr 380 ns Reverse recovery charge Q rr 5.3 μc Peak reverse recovery current I rrm 25.7 A V R=400 V I S=20 A di/dt=0 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper in a still air environment with T a=25 C. 5) V DD=150 V R G=25 Ω L=.8 mh starting T j=25 C. Oriental Semiconductor Copyright reserved 2017 4 / 9
Electrical Characteristics Diagrams Drain-source current (A) 30 28 26 24 7V 22 V 20 6V 18 16 14 12 8 6 5V 4 2 V GS = 4.5V 0 0 5 V DS Drain-source voltage (V) Drain current(a) V DS =20 V 125 25 1 0 2 4 6 8 V GS Gate-source voltage(v) Figure 1 Typ. output characteristics Figure 2 Typ. transfer characteristics 4 C Capacitance(pF) 3 2 1 C iss C oss V GS Gate-source voltage(v) 8 6 4 2 C rss 0 0 20 40 60 80 0 V DS Drain-source voltage (V) 0 0 4 8 12 16 20 24 Q g Gate charge(nc) Figure 3 Typ. capacitances Figure 4 Typ. gate charge BV DSS Drain-source breakdown voltage (V) 850 800 750 700 650 600-80 -40 0 40 80 120 160 T j Junction temperature ( ) R DS(on) On-resistance( ) 0.5 0.4 0.3 0.2 0.1 0.0-75 -50-25 0 25 50 75 0 125 150 175 T j Juntion temperature ( ) Figure 5 Drain-source breakdown voltage Figure 6 Drain-source on-state resistance Oriental Semiconductor Copyright reserved 2017 5 / 9
4.5 4.0 V th Threshold voltage (V) 3.5 3.0 2.5 2.0 Is Source current(a) 1 125 25 1.5-80 -40 0 40 80 120 160 T j Junction Temperature ( ) 0.1 0.4 0.6 0.8 1.0 1.2 V SD Source-drain voltage(v) Figure 7 Threshold voltage Figure 8 Forward characteristic of body diode 22 0.24 20 R DS(ON) On-resistance( ) 0.22 0.20 0.18 V GS =7 V V GS = V Drain-source current (A) 18 16 14 12 8 6 4 0.16 2 2 4 6 8 12 14 16 18 20 Drain current(a) 0 0 25 50 75 0 125 150 T C Case temperature ( ) Figure 9 Drain-source on-state resistance Figure Drain current 0 Drain current(a) 1 R DS(ON) Limited us 0 s 1ms ms 0ms DC 0.1 1 0 00 V DS Drain-source voltage(v) Figure 11 Safe operation area T C=25 Oriental Semiconductor Copyright reserved 2017 6 / 9
Test circuits and waveforms Figure 1 Gate charge test circuit & waveform Figure 2 Switching time test circuit & waveforms Figure 3 Unclamped inductive switching (UIS) test circuit & waveforms Figure 4 Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright reserved 2017 7 / 9
Package Information Figure1 PDFN8 8 package outline dimension Oriental Semiconductor Copyright reserved 2017 8 / 9
Ordering Information Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box PDFN8 8 2500 2 5000 5 25000 Product Information Product Package Pb Free RoHS Halogen Free PDNF8 8 yes yes yes Oriental Semiconductor Copyright reserved 2017 9 / 9