General Description MDE1N26RH Single N-channel Trench MOSFET V, 12A, 2.6mΩ The MDE1N26 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. G S D Features = V = 12A @ = 1V Very low on-resistance R DS(ON) < 2.6 mω @ = 1V % UIL Tested % Rg Tested G D TO-263 S Absolute Maximum Ratings ( = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S V Gate-Source Voltage S ±2 V T C=25 o C (Silicon Limited) 283 Continuous Drain Current (1) T C=25 o C (Package Limited) 12 T C= o C (Silicon Limited) 2 Pulsed Drain Current (2) M 48 A Power Dissipation T C=25 o C P D 416 T C= o C 28 W Single Pulse Avalanche Energy (3) E AS 512 mj Junction and Storage Temperature Range, T stg -55~175 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient R θja 62.5 Thermal Resistance, Junction-to-Case R θjc.36 o C/W 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDE1N26RH -55~175 o C TO-263 Tube Halogen Free Electrical Characteristics ( =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25μA, = V - - V Gate Threshold Voltage (th) =, = 25μA 2. - 4. Drain Cut-Off Current SS = V, = V - - 1. μa Gate Leakage Current I GSS = ±2V, = V - - ±.1 Drain-Source ON Resistance R DS(ON) = 1V, = 5A - 2.3 2.6 mω Forward Transconductance g fs = 1V, = 5A - 11 - S Dynamic Characteristics Total Gate Charge Q g - 147 - Gate-Source Charge Q gs = 5V, = 5A, = 1V - 42 - nc Gate-Drain Charge Q gd - 28 - Input Capacitance C iss - 1,42 - Reverse Transfer Capacitance C rss = 4V, = V, f = 1.MHz - 36 - pf Output Capacitance C oss - 2,5 - Turn-On Delay Time t d(on) - 33 - Rise Time t r = 1V, = 5V, - 2 - Turn-Off Delay Time t d(off) = 5A, R G = 3.Ω - 123 - ns Fall Time t f - 45 - Gate Resistance Rg f=1 MHz - 3. - Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = 5A, = V -.9 1.2 V Body Diode Reverse Recovery Time t rr - 98 ns I F = 5A, dl/dt = A/μs Body Diode Reverse Recovery Charge Q rr - 275 nc Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited 2. Pulse width limited by max 3. E AS is tested at starting Tj = 25, L = 1.mH, I AS = 32A, = 1V. 2
R, Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance R DS(ON) [mohm], Drain-Source On-Resistance Drain-Source On-Resistance [mohm] 2 18 16 14 12 8 6 4 2..5 1. 1.5 2. 2.5 3. 2.5 2. 1.5 1. = 15V 1.V 8.V 6.V 5.V Fig.1 On-Region Characteristics 1. = 1 V 2. = 5 A 4.V, Drain-Source Voltage [V] 4. 3.5 3. 2.5 2. 1.5 2 18 16 14 12 1 8 = 1V 1. 5 15 2 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage = 5A 6 = 25C.5 4 2. -5-25 25 5 75 125 15 175, Junction Temperature [ o C] 3 4 5 6 7 8 9 1, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 9 = 1V = V 8 7 6 5 =25C 1 4 =25C 3 2 1 1 1 2 3 4 5 6 7 8, Gate-Source Voltage [V]..3.6.9 1.2 1.5 V SD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3
Z thjc (t), Thermal Response, Gate-Source Voltage [V] Capacitance [pf] 1 Fig.7 Gate Charge Characteristics 1 3 1 2 1 1 8 6 4 2 = 5A = 5V 2 4 6 8 12 14 16 Operation in This Area is Limited by R DS(on) Q G, Total Gate Charge [nc] DC 1 us us 1 ms 1 ms ms 16 14 12 8 6 4 2 3 25 2 15 C rss C oss 1 2 3 4 Fig.8 Capacitance Characteristics C iss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd, Drain-Source Voltage [V] 1. = V 2. f = 1 MHz 1 1-1 Single Pulse =Max rated T C =25C o 1-1 1 1 1 1 2, Drain-Source Voltage [V] 5 25 5 75 125 15 175 T C, Case Temperature [C ] Fig.9 Maximum Safe Operating Area Fig.1 Maximum Drain Current vs. Case Temperature 1 1-1 D=.5.2.1.5 1-2.2.1 Single pulse : Notes ط Duty Factor, D=t 1 /t 2 PEAK = P DM * Z thjc * R thjc (t) + T C 1-3 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve 4
Package Dimension TO-263 Dimensions are in millimeters unless otherwise specified 5
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