General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS, HID and general purpose applications. MDHT7N25 N-Channel MOSFET 25V, 1.4A,.55Ω Features V DS = 25V = 1.4A R DS(ON).55Ω Applications Power Supply PFC LED TV @V GS = 1V D SOT-223 G D S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 25 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C=25 o C 1.4 A T C=1 o C.89 A Pulsed Drain Current (1) M 5.2 A Power Dissipation T C=25 o C P D 2.5 W Derate above 25 o C.2 W/ o C Peak Diode Recovery dv/dt (3) dv/dt 5.5 V/ns Repetitive Pulse Avalanche Energy (4) E AR.25 mj Avalanche current (1) I AR 1.4 A Single Pulse Avalanche Energy (4) E AS 115 mj Junction and Storage Range T J, T stg -55~15 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 5 o C/W *When mounted on the minimum pad size recommended (PCB Mount) 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDHT7N25URH -55~15 o C SOT-223 Reel and Tape Halogen Free Electrical Characteristics (Ta =25 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 25μA, V GS = V 25 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 25μA 3. - 5. Drain Cut-Off Current SS V DS = 25V, V GS = V - - 1 μa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - 1 na Drain-Source ON Resistance R DS(ON) V GS = 1V, =.7A.43.55 Ω Forward Transconductance g fs V DS = 3V, =.7A - 1.5 - S Dynamic Characteristics Total Gate Charge Q g - 11 - Gate-Source Charge Q gs V DS = 2V, = 6.2A, V GS = 1V - 2.7 - Gate-Drain Charge Q gd - 4.8 - Input Capacitance C iss - 4 - Reverse Transfer Capacitance C rss V DS = 25V, V GS = V, f = 1.MHz - 8 - Output Capacitance C oss - 78 - Turn-On Delay Time t d(on) - 11 - Rise Time t r V GS = 1V, V DS = 125V, = 6.2A, - 3 - Turn-Off Delay Time t d(off) R G = 25Ω - 22 - Fall Time t f - 22 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - 1.4 - A Source-Drain Diode Forward Voltage V SD I S = 1.4A, V GS = V - - 1.4 V Body Diode Reverse Recovery Time t rr - 135 - ns I F = 6.2A, dl/dt = 1A/μs (3) Body Diode Reverse Recovery Charge Q rr -.62 - μc V nc pf ns Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX)=15 C. 3. I SD 1.4A, di/dt 3A/us, V DD BVdss, R g =25Ω, Starting T J=25 C 4. L=94mH, I AS=1.4A, V DD=5V, R g =25Ω, Starting T J=25 C 2
(A) R DS(ON), (Normalized) Drain-Source On-Resistance BV DSS, (Normalized) Drain-Source Breakdown Voltage,Drain Current [A] R DS(ON) [Ω ] 18 15 12 9 6 3 V gs =5.V =5.5V =6.V =6.5V =7.V =8.V =8.5V =9.V =9.5V =1V =15V =2V 5 1 15 V DS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics Notes 1. 25 μs Pulse Test 2. T C =25 1.5 1..5. VGS=1V V GS =2V 4 8 12 16,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 3. 1.2 2.5 1. V GS = 1 V 2. =.7A 1. V GS = V 2. = 25 μa 1.1 2. 1.5 1. 1..9.5. -5 5 1 15 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 1 15 T J, Junction [ o C] Fig.4 Breakdown Voltage Variation vs. 1 * Notes ; 1. Vds=3V 1 R Reverse Drain Current [A] 1 1 15 25-55 15 25 1. V GS = V 2. 25 μs Pulse Test.1 3 4 5 6 7 8 9 1 11 V GS [V] Fig.5 Transfer Characteristics.1.2.4.6.8 1. V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
Power (W), Drain Current [A], Drain Current [A] Z θ JC (t), Thermal Response V GS, Gate-Source Voltage [V] Capacitance [pf] 1 8 6 4 2 Note : = 7A 1 2 3 4 5 6 7 8 9 1 11 12 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 5V 125V 2V 8 7 6 5 4 3 2 1 C oss C iss C rss 1 1 V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ; 1. V GS = V 2. f = 1 MHz 1 1 Operation in This Area is Limited by R DS(on) 1 s 1 s D=.5 1 1-1 1-2 Single Pulse T J =Max rated T C =25 1 ms 1 ms 1 ms 1 s 1 s DC 1-1 1 1 1 1 2 V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area 1 1 1 1-1.2.1.5.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JA =5. /W 1-5 1-4 1-3 1-2 1-1 1 1 1 1 2 1 3 t 1, Rectangular Pulse Duration [sec] Fig.1 Transient Thermal Response Curve 1.6 5 single Pulse R thja = 5. /W T C = 25 4 1.2 3.8 2 1.4 1E-4 1E-3.1.1 1 1 1 1 Pulse Width (s) Fig.11 Single Pulse Maximum Power Dissipation. 25 5 75 1 125 15 T C, Case [ ] Fig.12 Maximum Drain Current vs. Case 4
Physical Dimension SOT-223 Dimensions are in millimeters, unless otherwise specified 5
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