UG(F,B)FCT & UG(F,B)GCT, BYT8(F,B)-300 & BYT8(F,B)-400 Dual Common-Cathode Ultrafast Soft Recovery Rectifier TO-0AB 3 BYT8, UG Series PIN PIN PIN 3 CASE TO-63AB ITO-0AB 3 BYT8F, UGF Series PIN PIN PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time Low switching losses, high efficiency Low forward voltage drop High forward surge capability Meets MSL level, per J-STD-00C, LF maximum peak of 45 C (for TO-63AB package) Solder dip 60 C, 40 s (for TO-0AB and ITO-0AB package) Component in accordance to RoHS 00/95/EC and WEEE 00/96/EC BYT8B, UGB Series PIN PIN HEATSIN PRIMARY CHARACTERISTICS I F(AV) 5 A x V RRM 300 V, 400 V I FSM 60 A t rr 35 ns V F.05 V T J max. 50 C TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. MECHANICAL DATA Case: TO-0AB, ITO-0AB, TO-63AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-00B and JESD-BD E3 suffix for commercial grade, meets JESD 0 class A whisker test, HE3 suffix for high reliability grade (AEC Q qualified), meets JESD 0 class whisker test Polarity: As marked Mounting Torque: in-lbs maximum MAXIMUM RATINGS (T C = 5 C unless otherwise noted) PARAMETER SYMBOL BYT8-300 UGFCT BYT8-400 UGGCT Maximum repetitive peak reverse voltage V RRM 300 400 V Maximum working reverse voltage V RWM 300 400 V Maximum RMS voltage V RMS 80 Maximum DC blocking voltage V DC 300 400 V Maximum average forward rectified current at T C = C total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I FSM 60 A Operating junction and storage temperature range T J, T STG - 40 to + 50 C Isolation voltage (ITO-0AB only) from terminal to heatsink t = min V AC 500 V I F(AV) 5.0 UNIT A Document Number: 8855
UG(F,B)FCT & UG(F,B)GCT, BYT8(F,B)-300 & BYT8(F,B)-400 ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT I Maximum instantaneous F = 5 A, forward voltage per diode () I F = A I F = 5 A T J = 50 C V F.30.40.05 V Maximum reverse current per diode at V RRM T J = C I R 00 µa time per diode I F = 0.5 A, I R =.0 A, I rr = 0.5 A t rr 35 ns time per diode current per diode Maximum stored charge per diode Note: I F =.0 A, di/dt = A/µs, V R = 30 V, I rr = 0. I RM I F = 5 A, di/dt = 50 A/µs, V R = 30 V, T C = C I F = A, di/dt = 0 A/µs, V R = 30 V, I rr = 0. I RM t rr 50 ns I RM 3.0 A Q rr 50 nc () Pulse test: 300 µs pulse width, % duty cycle THERMAL CHARACTERISTICS (T C = 5 C unless otherwise noted) PARAMETER SYMBOL BYT8 UG BYT8F UGF BYT8B UGB UNIT Typical thermal resistance junction to case per diode R θjc 4.5 6.7 4.5 C/W ORDERING INFORMATION (Example) PACAGE PREFERRED P/N UNIT WEIGHT (g) PACAGE CODE BASE QUANTITY DELIVERY MODE TO-0AB BYT8-400-E3/45.80 45 50/tube Tube ITO-0AB BYT8F-400-E3/45.95 45 50/tube Tube TO-63AB BYT8B-400-E3/45.77 45 50/tube Tube TO-63AB BYT8B-400-E3/8.77 8 800/reel Tape reel TO-0AB BYT8-400HE3/45 ().80 45 50/tube Tube ITO-0AB BYT8F-400HE3/45 ().95 45 50/tube Tube TO-63AB BYT8B-400HE3/45 ().77 45 50/tube Tube TO-63AB BYT8B-400HE3/8 ().77 8 800/reel Tape reel Note: () Automotive grade AEC Q qualified Document Number: 8855
Average Forward Current (A) Junction Capacitance (pf) UG(F,B)FCT & UG(F,B)GCT, BYT8(F,B)-300 & BYT8(F,B)-400 RATINGS AND CHARACTERISTICS CURVES (T A = 5 C unless otherwise noted) 5 Resistive or Inductive Load 5 0 0 50 50 Case Temperature ( C) Figure. Forward Current Derating Curve Instantaneous Reverse Current (µa) 0.0 T J = C 0. 0 40 60 80 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics Per Diode Peak Forward Surge Current (A) T C = 5 C 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz Stored Charge/Reverse Recovery Time (nc/ns) 0 80 60 40 0 at A, 0 A/µs 0 5 50 Junction Temperature ( C) at 5 A, 50 A/µs at 5 A, 50 A/µs at A, A/µs at A, 0 A/µs t rr Q rr 75 5 Figure. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 5. Reverse Switching Characteristics Per Diode Instantaneous Forward Current (A).0 0. Pulse Width = 300 µs % Duty Cycle T J = C f =.0 MHz V sig = 50 mvp-p 0.0 0. 0.4 0.6 0.8.0..4.6.8 Instantaneous Forward Voltage (V) 0. Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode Document Number: 8855 3
UG(F,B)FCT & UG(F,B)GCT, BYT8(F,B)-300 & BYT8(F,B)-400 PACAGE OUTLINE DIMENSIONS in inches (millimeters) 0.45 (.54) MAX. 0.370 (9.40) 0.360 (9.4) TO-0AB 0.54 (3.9) 0.48 (3.74) 0.3 (.87) 0.3 (.6) 0.85 (4.70) 0.75 (4.44) 0.055 (.39) 0.045 (.4) 45 REF. 0.404 (.6) 0.384 (9.75) ITO-0AB 0.076 (.93) REF. 0.076 (.93) REF. 0.40 (3.56) DIA. 0.5 (3.7) DIA. 0.90 (4.83) 0.70 (4.3) 0. (.79) 0. (.54) 0.35 (3.43) DIA. 0. (3.08) DIA. 0.60 (4.06) 0.40 (3.56) 0.057 (.45) 0.045 (.4) 0.5 (.67) 0.095 (.4) PIN 3 0.635 (6.3) 0.65 (5.87) 0.035 (0.90) 0.08 (0.70) 0.4 (.65) 0.096 (.45) 0.05 (5.0) 0.95 (4.95) 0.45 (3.68) 0.35 (3.43) 0.350 (8.89) 0.330 (8.38).48 (9.6).8 (8.40) 0.560 (4.) 0.530 (3.46) 0.0 (0.56) 0.04 (0.36) 0.603 (5.3) 0.573 (4.55) 0. (.79) 0. (.54) 0.600 (5.4) 0.580 (4.73) 0.560 (4.) 0.530 (3.46) 0.057 (.45) 0.045 (.4) 0.05 (0.64) 0.05 (0.38) 0.5 (.67) 0.095 (.4) PIN 3 0.67 (7.04) 0.65 (6.54) 0.9 (4.85) 0.7 (4.35) 0.057 (.45) 0.045 (.4) 0.035 (0.89) 0.05 (0.64) 0.05 (5.) 0.95 (4.95) 0.350 (8.89) 0.330 (8.38) 0. (.79) 0. (.54) 0.08 (0.7) 0.00 (0.5) TO-63AB 0.4 (.45) 0.380 (9.65) 0.45 (6.) MIN. 0.90 (4.83) 0.60 (4.06) 0.055 (.40) 0.045 (.4) Mounting Pad Layout 0.4 (.66) MIN. 0.360 (9.4) 0.30 (8.3) 0.037 (0.940) 0.07 (0.686) 0.5 (.67) 0.095 (.4) 0.64 (5.85) 0.59 (5.00) 0.05 (5.0) 0.95 (4.95) 0.055 (.40) 0.047 (.9) 0 to 0.0 (0 to 0.54) 0. (.79) 0.090 (.9) 0.0 (0.53) 0.04 (0.36) 0.40 (3.56) 0. (.79) 0.670 (7.0) 0.59 (5.00) 0.08 (.03) MIN. 0.5 (.67) 0.095 (.4) 0.33 (8.38) MIN. 0.5 (3.8) MIN. Document Number: 8855 4
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