Silicon PIN Photodiode Description BPW4N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (λ p = 95 nm). The large active area combined with a flat case gives a high sensitivity at a wide viewing angle. Features Large radiant sensitive area (A = 7.5 mm 2 ) Wide angle of half sensitivity ϕ = ± 65 High radiant sensitivity Fast response times Small junction capacitance Plastic case with IR filter (λ = 95 nm) Suitable for near infrared radiation Lead-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC Absolute Maximum Ratings Applications High speed photo detector Parameter Test condition Symbol Value Unit Reverse Voltage V R 6 V Power Dissipation T amb 25 C P V 25 mw Junction Temperature T j C Storage Temperature Range T stg - 55 to + C Soldering Temperature t 5 s T sd 26 C Thermal Resistance Junction/ Ambient Electrical Characteristics 94 848 R thja 35 K/W Parameter Test condition Symbol Min Typ. Max Unit Breakdown Voltage I R = µa, E = V (BR) 6 V Reverse Dark Current V R = V, E = I ro 2 3 na Diode capacitance V R = V, f = MHz, E = C D 7 pf V R = 3 V, f = MHz, E = C D 25 4 pf
Optical Characteristics Parameter Test condition Symbol Min Typ. Max Unit Open Circuit Voltage E e = mw/cm 2, λ = 95 nm V o 35 mv Temp. Coefficient of V o Ee = mw/cm 2, λ = 95 nm TK Vo - 2.6 mv/k Short Circuit Current E e = mw/cm 2, λ = 95 nm I k 38 µa Temp. Coefficient of I k Ee = mw/cm 2, λ = 95 nm TK Ik. %/K Reverse Light Current E e = mw/cm 2, λ = 95 nm, V R = 5 V I ra 43 45 µa Angle of Half Sensitivity ϕ ± 65 deg Wavelength of Peak Sensitivity λ p 95 nm Range of Spectral Bandwidth λ.5 87 to 5 nm Noise Equivalent Power V R = V, λ = 95 nm NEP 4 x -4 W/ Hz Rise Time V R = V, R L = kω, λ = 82 nm t r ns Fall Time V R = V, R L = kω, λ = 82 nm t f ns Typical Characteristics (Tamb = 25 C unless otherwise specified) I ro - Reverse Dark Current ( na ) 94 843 I ra rel - Relative Reverse Light Current V R =V 2 4 6 8 T amb - Ambient Temperature ( C ) Figure. Reverse Dark Current vs. Ambient Temperature 94 849.4.2. 2 V R =5V λ = 95 nm 4 T amb - Ambient Temperature ( C ) 6 Figure 2. Relative Reverse Light Current vs. Ambient Temperature 8 I ra Reverse Light Current (µa) 94 844 I ra Reverse Light Current (µa) 94 845... V R =5V λ =95nm E e Irradiance ( mw/ cm 2 ) Figure 3. Reverse Light Current vs. Irradiance λ= 95 nm mw/cm 2.5mW/cm 2.2 mw/cm 2.mW/cm 2.5mW/cm 2 Figure 4. Reverse Light Current vs. Reverse Voltage.2mW/cm 2. V R Reverse Voltage ( V ) 2
C - Diode Capacitance ( pf ) D 94 847 S ( ) rel Relative Spectral Sensitivity 94 848 S rel Relative Sensitivity 94 846 8 6 4 2 E= f=mhz. V R - Reverse V oltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage.2..4.2 75 85 95 5 Wavelength ( nm ) 5 Figure 6. Relative Spectral Sensitivity vs. Wavelength..9.7 2.4.2.2.4 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 3 4 5 6 7 8 3
Package Dimensions in mm 96 295 4
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