SGLN5D September 2 IGBT SGLN5D General Description Fairchild s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGLN5D is designed for the Induction Heating applications. Features High Speed Switching Low Saturation Voltage : V CE(sat) = 3.7 V @ = A High Input Impedance Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven C G G C E TO-26 E Absolute Maximum Ratings = 25 C unless otherwise noted Symbol Description SGLN5D Units V CES Collector-Emitter Voltage 5 V S Gate-Emitter Voltage ± 25 V Collector Current @ T = 25 C A C Collector Current @ = C 2 A M () Pulsed Collector Current 2 A I F Diode Continuous Forward Current @ = C A I FM Diode Maximum Forward Current A P D Maximum Power Dissipation @ = 25 C 2 W Maximum Power Dissipation @ = C 8 W T J Operating Junction Temperature -55 to +5 C T stg Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for Soldering Purposes, /8 from Case for 5 Seconds 3 C Notes : () Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction-to-Case --.625 C/W R θjc (DIODE) Thermal Resistance, Junction-to-Case --.83 C/W R θja Thermal Resistance, Junction-to-Ambient -- 25 C/W 2 Fairchild Semiconductor International SGLN5D Rev. A
Electrical Characteristics of IGBT = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector-Emitter Breakdown Voltage = V, = 25uA 5 -- -- V ES Collector Cut-Off Current V CE = V CES, = V -- -- 25 ua I GES G-E Leakage Current = S, V CE = V -- -- ± na SGLN5D On Characteristics (th) G-E Threshold Voltage = ma, V CE = 3.5 5. 7.5 V V CE(sat) Collector to Emitter Saturation Voltage = A, = 5V -- 3.7.7 V Dynamic Characteristics C ies Input Capacitance -- -- pf V CE = V, = V, C oes Output Capacitance -- 7 -- pf f = MHz C res Reverse Transfer Capacitance -- 3 -- pf Switching Characteristics t d(on) Turn-On Delay Time -- 9 2 ns V CC = 6V, = A, t r Rise Time -- 23 7 ns R G = 5Ω, = 5V, t d(off) Turn-Off Delay Time -- 25 ns Resistive Load, = 25 C t f Fall Time -- 23 ns Q g Total Gate Charge -- 7 nc V CE = 6V, = A, Q ge Gate-Emitter Charge -- 25 25 nc = 5V Q gc Gate-Collector Charge -- 5 6 nc Electrical Characteristics of DIODE = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V FM Diode Forward Voltage I F = A --.3.8 V t rr Diode Reverse Recovery Time I F = A, di/dt = 2A/us -- 7 3 ns 2 Fairchild Semiconductor International SGLN5D Rev. A
Collector Current, 8 6 2 5V 2V V 2V = 8V Collector Current, 2 8 6 2 = 5V SGLN5D 2 6 8 2 6 8 Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 6 5 3 2 = 5V = 8A = A = 2A Capacitance [pf] 6 5 3 2 C ies C oes C res =V, f=mhz =25 o C 25 5 75 25 Case Temperature, [ o C] Fig 3. Collector to Emitter Saturation Voltage vs. Case Temperature Fig. Typical Capacitance vs. Collector to Emitter Voltage Collector - Emitter Voltage, V CE 2 6 2 8 2A A 8A 2 6 2 8 2A A 8A = 25 C 8 2 6 2 Gate - Emitter Voltage, 8 2 6 2 Gate - Emitter Voltage, Fig 5. Saturation Voltage vs. Fig 6. Saturation Voltage vs. 2 Fairchild Semiconductor International SGLN5D Rev. A
Switching Time [ns] = ± 5V, R G = 5Ω td(off) Switching Time [ns] = ± 5V, R G = 5Ω td(on) tr SGLN5D 2 3 5 6 7 8 Collector Current, 2 3 5 6 7 8 9 Collector Current, Fig 7. Turn-Off Characteristics vs. Collector Current Fig 8. Turn-On Characteristics vs. Collector Current Switching Loss [ µj] = ± 5V, R G = 5Ω Eon Switching Time [ns] V CC = 6V, = ± 5V = A td(off) 2 3 5 6 7 8 9 Collector Current, Gate Resistance, R G [Ω] Fig 9. Switching Loss vs. Collector Current Fig. Turn-Off Characteristics vs. Gate Resistance Switching Time [ns] V CC = 6V, = ± 5V = A tr td(on) Switching Loss [µj] V CC = 6V, = ± 5V = A Eon Eon Gate Resistance, R G [Ω] Gate Resistance, R G [Ω] Fig. Turn-On Characteristics vs. Gate Resistance Fig 2. Switching Loss vs. Gate Resistance 2 Fairchild Semiconductor International SGLN5D Rev. A
Gate - Emitter Voltage, V GE 2 8 6 2 R L = 5Ω, V CC = 6V Collector Current,. MAX (Pulsed) MAX (Continuous) Single Nonrepetitive Pulse Curves must be derated linearly with increase in temperature DC Operation ms µs 5µs SGLN5D 25 5 75 25 5.. Gate Charge, Qg [nc] Fig 3. Gate Charge Characteristics Fig. SOA Characteristics 5 3 5 27 Reverse Recovery Time, t rr [ns] 35 3 25 2 5 5 IF = A Reverse Recovery Time, t rr [ns] 2 2 8 5 2 9 6 di/dt = 5A/us A/us 2A/us 5 5 2 25 3 di/dt [A/us] 3 2 3 5 6 7 8 9 Forward Current, IF Fig 5. Typical T rr vs. di/dt Fig 6. Typical T rr vs. Forward Current Reverse Current, I R [ua].. = 25 25 Instantaneous Forward Current, I F =25 25 E-3 3. 6. 9..2k.5k Reverse Voltage, V R...6.8..2..6 Instantaneous Voltage, V F Fig 7. Reverse Current vs. Reverse Voltage Fig 8. Typical Forward Voltage Drop vs. Forward Current 2 Fairchild Semiconductor International SGLN5D Rev. A
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