Optocoupler, Phototransistor Output

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Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES DC isolation test voltage 5 V RMS Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC APPLICATIONS Programmable logic controllers Modems 723-6 C E Answering machines General applications AGENCY APPROVALS UL577, file no. E57244 system code H, double protection A C 8 pin cul tested to CSA 22.2 bulletin 5A, UL577, file no. E52744 6 pin 723-7 C DESCRIPTION In the K827PH, K847PH parts each channel consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 8 pin (dual); 6 pin (quad) plastic dual inline package. ORDER INFORMATION PART K827PH K847PH Note K827PH and K847PH are marked as K827P and K847P respectively. REMARKS CTR 5 % to 6 %, DIP-8 CTR 5 % to 6 %, DIP-6 ABSOLUTE MAXIMUM RATINGS () (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 6 ma Forward surge current t P μs SM.5 A Power dissipation P diss mw Junction temperature T j 25 C OUTPUT Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current 5 ma Collector peak current /T =.5, ms M ma Power dissipation P diss 5 mw Junction temperature T j 25 C Document Number: 835 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev.., 4-Mar- 543

Vishay Semiconductors Optocoupler, Phototransistor Output ABSOLUTE MAXIMUM RATINGS () (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER AC isolation test voltage (RMS) t = min V ISO 5 V RMS Total power dissipation P tot 25 mw Operating ambient temperature range T amb - 4 to + C Storage temperature range T stg - 55 to + 25 C Soldering temperature (2) 2 mm from case, t s T sld 26 C Notes () Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTICS () (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 5 ma V F.25.6 V Junction capacitance V R = V, f = MHz C j 5 pf OUTPUT Collector emitter voltage = μa V CEO 7 V Emitter collector voltage I E = μa V ECO 7 V Collector dark current V CE = 2 V, =, E = EO na COUPLER Collector emitter saturation voltage = ma, = ma V CEsat.3 V Cut-off frequency = ma, V CE, R L = Ω f c khz Coupling capacitance f = MHz C k.3 pf Note () Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are noart of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT K827PH CTR 5 6 % / V CE, = 5 ma K847PH CTR 5 6 % www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 835 544 Rev.., 4-Mar-

Optocoupler, Phototransistor Output Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time V S, = 2 ma, R L = Ω (see figure ) V S, = 2 ma, R L = Ω (see figure ) V S, = 2 ma, R L = Ω (see figure ) V S, = 2 ma, R L = Ω (see figure ) V S, = 2 ma, R L = Ω (see figure ) V S, = 2 ma, R L = Ω (see figure ) V S, = ma, R L = kω (see figure 2) V S, = ma, R L = kω (see figure 2) t d 3 μs t r 3 μs t f 4.7 μs t s.3 μs 6 μs t off 5 μs 9 μs t off 8 μs R G = 5 Ω + 5 V IC = 2 ma; adjusted through input amplitude % 9 % t T =. = 5 µs 95 84 5 Ω Ω Channel I Channel II Oscilloscope R L = MΩ C L = 2 pf % t d t r (= t d + t r ) t r t d Pulse duration Delay time Rise time Turn-on time t s t f t off t s t f t off (= t s + t f ) t Storage time Fall time Turn-off time 96 698 Fig. - Test Circuit, Non-Saturated Operation Fig. 3 - Switching Times = ma + 5 V R G = 5 Ω T =. = 5 µs 5 Ω kω Channel I Channel II Oscilloscope R L MΩ C L 2 pf 95 843 Fig. 2 - Test Circuit, Saturated Operation Document Number: 835 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev.., 4-Mar- 545

Vishay Semiconductors Optocoupler, Phototransistor Output TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) P tot - Total Power Dissipation (mw) 3 Coupled device 25 2 Phototransistor 5 IR-diode 5 4 8 2 96 7 T amb - Ambient Temperature ( C) Fig. 4 - Total Power Dissipation vs. Ambient Temperature EO - Collector Dark Current, with Open Base (na) 95 26 V CE = 2 V = 25 5 75 T amb - Ambient Temperature ( C) Fig. 7 - Collector Dark Current vs. Ambient Temperature - Forward Current (ma). V CE 96 862..4.8.2.6 2. V F - Forward Voltage (V).. 95 27 - Forward Current (ma) Fig. 5 - Forward Current vs. Forward Voltage Fig. 8 - Collector Current vs. Forward Current CTR rel - Relative Current Transfer Ratio 2..5..5 95 25-25 25 5 V CE = 5 ma T amb - Ambient Temperature ( C) Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature 75 = 5 ma 2 ma ma 5 ma 2 ma ma.. 95 985 V CE - Collector Emitter Voltage (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 835 546 Rev.., 4-Mar-

Optocoupler, Phototransistor Output Vishay Semiconductors V CEsat - Collector Emitter Saturation Voltage (V)..8.6.4 CTR = 5 % used 2 % used.2 % used 95 28 Fig. - Collector Emitter Saturation Voltage vs. Collector Current /t off - Turn-on /Turn-off Time (µs) 8 6 4 2 t off Non-saturated operation V S R L = Ω 2 4 6 95 3 Fig. 3 - Turn-on/off Time vs. Collector Current 8 CTR - Current Transfer Ratio (%) V CE. 95 29 - Forward Current (ma) Fig. - Current Transfer Ratio vs. Forward Current /t off - Turn-on/Turn-off Time (µs) 5 4 3 2 Saturated operation V S R L = kω 5 5 95 3 - Forward Current (ma) t off 2 Fig. 2 - Turn-on/Turn-off Time vs. Forward Current Document Number: 835 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev.., 4-Mar- 547

Vishay Semiconductors Optocoupler, Phototransistor Output PACKAGE DIMENSIONS in millimeters Pin one ID 4 3 2 6.48 6.8 5 6 7 8 ISO method A 9.63 9.9.76.4 4 typ..79 7.62 typ. 3.3 3.8 i786.27.46.56 2.54 typ..5.89 3 to 9.2.3 2.79 3.3 5.84 6.35 Pin one ID 8 7 6 5 4 3 2 6.48 6.8 9 2 3 4 5 6 ISO method A 9.77 2.7.76.4 7.62 typ. 3.3 3.8 4.46.56 2.54 typ..27.5.89 3 to 9 typ..2.3 2.79 3.3 5.84 6.35 i787 PACKAGE MARKING K827P V YWW H 68 K847P V YWW H 68 2764-5 2764-5 www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 835 548 Rev.., 4-Mar-

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