I D, Drain Current (A) IR MOSFET StrongIRFET IRF6B27 HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters G D S V DSS R DS(on) typ. max I D 6V 7.3m 9.m 6A Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free* RoHS Compliant, Halogen-Free S D G TO-22AB IRF6B27 G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF6B27 TO-22 Tube 5 IRF6B27 R DS (on), Drain-to -Source On Resistance ( m ) 3 I D = 36A 6 25 5 2 4 5 3 2 5 4 8 2 6 2 V GS, Gate-to-Source Voltage (V) 25 5 75 25 5 75 T C, CaseTemperature ( C) Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 26-5
Absolute Maximum Rating IRF6B27 Symbol Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, VGS @ V (Silicon Limited) 6 I D @ T C = C Continuous Drain Current, V GS @ V (Silicon Limited) 42 A I DM Pulsed Drain Current 225 P D @T C = 25 C Maximum Power Dissipation 83 W Linear Derating Factor.56 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to + 75 Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 3 Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy 85 E AS (Thermally limited) Single Pulse Avalanche Energy 24 mj I AR Avalanche Current A See Fig 5, 6, 23a, 23b E AR Repetitive Avalanche Energy mj Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.8 R CS Case-to-Sink, Flat Greased Surface.5 C/W R JA Junction-to-Ambient 62 Static @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 6 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.47 V/ C Reference to 25 C, I D = ma 7.3 9. V R GS = V, I D = 36A DS(on) Static Drain-to-Source On-Resistance m 9. V GS = 6.V, I D = 8A V GS(th) Gate Threshold Voltage 2. 3.7 V V DS = V GS, I D = 5µA. V DS =4 V, V GS = V I DSS Drain-to-Source Leakage Current µa 5 V DS =4V,V GS = V,T J =25 C Gate-to-Source Forward Leakage V I GSS na GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V R G Gate Resistance 2. Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L =.3mH, R G = 5, I AS = 36A, V GS =V. I SD 36A, di/dt 63A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while VDS is rising from to 8% V DSS. R is measured at T J approximately 9 C. Limited by T Jmax, starting, L = mh, R G = 5, I AS = 6A, V GS =V. 2 26-5
IRF6B27 Dynamic Electrical Characteristics @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 5 S V DS = V, I D =36A Q g Total Gate Charge 44 66 I D = 36A Q gs Gate-to-Source Charge 2 V DS = 3V nc Q gd Gate-to-Drain Charge 4 V GS = V Q sync Total Gate Charge Sync. (Qg Qgd) 3 t d(on) Turn-On Delay Time 8.3 V DD = 3V t r Rise Time 37 I D = 36A ns t d(off) Turn-Off Delay Time 24 R G = 2.7 t f Fall Time 2 V GS = V C iss Input Capacitance 223 V GS = V C oss Output Capacitance 25 V DS = 25V C rss Reverse Transfer Capacitance 4 ƒ =.MHz, See Fig.7 pf Effective Output Capacitance C oss eff.(er) 23 V GS = V, V DS = V to 48V (Energy Related) C oss eff.(tr) Output Capacitance (Time Related) 295 V GS = V, V DS = V to 48V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol D I S 6 (Body Diode) showing the A G Pulsed Source Current integral reverse I SM 225 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.9.2 V,I S = 36A,V GS = V dv/dt Peak Diode Recovery dv/dt 2 V/ns T J = 75 C,I S = 36A,V DS = 4V t rr Reverse Recovery Time 26 V DD = 5V ns 27 I F = 36A, Q rr Reverse Recovery Charge 24 di/dt = A/µs nc 25 I RRM Reverse Recovery Current.7 A 3 26-5
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF6B27 VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 4.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics 2.5 I D = 36A T J = 75 C 2. V GS = V.5 V DS = 3V 6µs PULSE WIDTH. 3. 4. 5. 6. 7. 8. V GS, Gate-to-Source Voltage (V)..5-6 -4-2 2 4 6 8 2 4 6 8 T J, Junction Temperature ( C) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss 4 2 I D = 36A V DS = 48V V DS = 3V V DS= 2V 8 Coss Crss 6 4 2. V DS, Drain-to-Source Voltage (V) 2 3 4 5 6 Q G Total Gate Charge (nc) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 4 26-5
I SD, Reverse Drain Current (A) V (BR)DSS, Drain-to-Source Breakdown Voltage (V) Energy (µj) I D, Drain-to-Source Current (A) IRF6B27 T J = 75 C µsec T J = 25 C V GS = V..2.4.6.8..2 V SD, Source-to-Drain Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) msec msec. Tc = 25 C DC Tj = 75 C Single Pulse.. V DS, Drain-toSource Voltage (V) Fig. Maximum Safe Operating Area 75 Id =.ma.4.3 7.2 65. 6-6 -4-2 2 4 6 8 2468 T J, Temperature ( C ). 2 3 4 5 6 V DS, Drain-to-Source Voltage (V) Fig. Drain-to-Source Breakdown Voltage Fig 2. Typical C oss Stored Energy R DS (on), Drain-to -Source On Resistance ( m ) 24. 2. 6. V GS = 6.V V GS = 7.V V GS = 8.V V GS = V 2. 8. 4. 4 8 2 6 I D, Drain Current (A) Fig 3. Typical On-Resistance vs. Drain Current 5 26-5
E AR, Avalanche Energy (mj) Thermal Response ( Z thjc ) C/W IRF6B27 D =.5...2..5.2. SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) Fig 4. Maximum Effective Transient Thermal Impedance, Junction-to-Case Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse) Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 5. Avalanche Current vs. Pulse Width 8 6 4 2 TOP Single Pulse BOTTOM.% Duty Cycle I D = 36A 25 5 75 25 5 75 Starting T J, Junction Temperature ( C) Fig 6. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 5, 6: (For further info, see AN-5 at www.irf.com).avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = tav f Z thjc (D, t av ) = Transient thermal resistance, see Figures 4) PD (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 6 26-5
Q RR (nc) I RRM (A) Q RR (nc) V GS (th) Gate threshold Voltage (V) I RRM (A) IRF6B27 4.5 4. 3.5 2 8 I F = 24A V R = 5V 3. 2.5 2. I D = 25µA I D =.ma I D = ma 6 4.5 I D =.A 2. -75-5 -25 25 5 75 25 5 75 T J, Temperature ( C ) 2 4 6 8 di F /dt (A/µs) Fig 7. Threshold Voltage vs. Temperature Fig 8. Typical Recovery Current vs. dif/dt 2 8 I F = 36A V R = 5V 4 2 I F = 24A V R = 5V 6 8 4 6 2 4 2 4 6 8 2 2 4 6 8 di F /dt (A/µs) di F /dt (A/µs) Fig 9. Typical Recovery Current vs. dif/dt Fig 2. Typical Stored Charge vs. dif/dt 4 2 I F = 36A V R = 5V 8 6 4 2 2 4 6 8 di F /dt (A/µs) Fig 2. Typical Stored Charge vs. dif/dt 7 26-5
IRF6B27 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 2V tp D.U.T I AS. + - V DD A I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Vds Id Vgs VDD Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform 8 26-5
IRF6B27 TO-22AB Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information E X A M P L E : T H IS IS A N IR F L O T C O D E 7 8 9 ASSEM BLED O N W W 9, 2 IN TH E ASSEM BLY LIN E "C" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead - Free" IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E P A R T N U M B E R D A T E C O D E YEAR = 2 W EEK 9 LIN E C TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 26-5
IRF6B27 Qualification Information Qualification Level Industrial (per JEDEC JESD47F) Moisture Sensitivity Level TO-22 N/A RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 25 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 26-5