MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies; or wherever full wave silicon gate controlled devices are needed. Off State Voltages to 800 All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat Dissipation Gate Triggering Guaranteed in Four Modes Device Marking: Logo, Device Type, e.g., MAC3A6, Date Code TRIACS 5 AMPERES RMS 00 thru 800 VOLTS MT G MAXIMUM RATINGS (T J = 5 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage (1) (T J = 0 to 15 C, Sine Wave 50 to 60 Hz, Gate Open) MAC3A6 MAC3A8 MAC3A On State Current RMS Full Cycle Sine Wave 50 to 60 Hz (T C = 80 C) Peak Non repetitive Surge Current (One Full Cycle, 60 Hz, T C = 80 C) Preceded and followed by rated current V DRM, V RRM 00 600 800 I T(RMS) 5 A I TSM 50 A Circuit Fusing (t = 8.3 ms) I t 60 A s Peak Gate Current (t μsec; T C = +80 C) Peak Gate Voltage (t μsec; T C = +80 C) Peak Gate Power (t μsec; T C = +80 C) Average Gate Power (T C = 80 C, t = 8.3 ms) I GM A V GM P GM 0 Watts P G(AV) Watts Operating Junction Temperature Range T J 0 to 15 C Storage Temperature Range T stg 0 to 150 C Mounting Torque 8.0 in. lb. (1) V DRM and V RRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device Package Shipping MAC3A6 TO0AB 500/Box MAC3A8 MAC3A 1 3 TO 0AB CASE 1A STYLE TO0AB TO0AB PIN ASSIGNMENT 1 Main Terminal 1 Main Terminal 3 Gate Main Terminal 500/Box 500/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 006 August, 006 Rev. 1 Publication Order Number: MAC3A/D
THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R θjc 1. C/W Thermal Resistance, Junction to Ambient R θja 60 C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for Seconds T L 60 C ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise indicated; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current T J = 5 C (V D = Rated V DRM, V RRM ; Gate Open) T J = 15 C ON CHARACTERISTICS Peak On State Voltage (I TM = 35 A Peak, Pulse Width ms, Duty Cycle %) Gate Trigger Current (Continuous dc) (V D = 1 V, R L = 0 Ω) MT(+), G(+); MT( ), G( ); MT(+), G( ) MT( ), G(+) Gate Trigger Voltage (Continuous dc) (V D = 1 V, R L = 0 Ω) MT(+), G(+); MT( ), G( ); MT(+), G( ) MT( ), G(+) Gate Non trigger Voltage (V D = 1 V, T J = 15 C, R L = 0 Ω) All Quadrants Holding Current (V D = 1 Vdc, Gate Open, Initiating Current = 00 ma) Turn On Time (V D = Rated V DRM, I TM = 35 A Peak, I G = 00 ma) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (V D = Rated V DRM, Exponential Waveform, T C = 15 C) Critical Rate of Rise of Commutation Voltage (V D = Rated V DRM, I TM = 35 A Peak, Commutating di/dt = 1.6 A/ms, Gate Unenergized, T C = 80 C) I DRM, I RRM μa ma 1. 1.85 I GT V GT 0 30 1.1 1.3 50 75.5 V GD 0. ma 50 ma t gt 1.5 μs dv/dt 0 V/μs dv/dt(c) 5.0 V/μs
Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol V DRM I DRM V RRM I RRM Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current I RRM at V RRM on state Quadrant 1 MainTerminal + Maximum On State Voltage Holding Current off state + Voltage I DRM at V DRM Quadrant 3 MainTerminal Quadrant Definitions for a Triac MT POSITIVE (Positive Half Cycle) + (+) MT (+) MT Quadrant II ( ) I GT (+) I GT Quadrant I I GT + I GT ( ) MT ( ) MT Quadrant III ( ) I GT (+) I GT Quadrant IV MT NEGATIVE (Negative Half Cycle) All polarities are referenced to. With in phase signals (using standard AC lines) quadrants I and III are used. 3
T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 15 115 5 95 85 75 0 5.0 15 0 5 I T(RMS), RMS ON STATE CURRENT (AMPS), AVERAGE POWER DISSIPATION (WATTS) PD 0 30 0 0 0 5.0 15 0 5 I T(RMS), RMS ON STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure. On State Power Dissipation NORMALIZED CURRENT 3.0 V D = 1 V R L = 0 Ω NORMALIZED VOLTAGE 3.0 V D = 1 V R L = 0 Ω 0.1 0.1 60 0 0 0 0 0 60 80 0 60 0 0 0 0 0 60 80 0 Figure 3. Typical Gate Trigger Current Figure. Typical Gate Trigger Voltage NORMALIZED HOLD CURRENT I TM = 00 ma Gate Open 0.1 60 0 0 0 0 0 60 80 0 i TM, INSTANTANEOUS ON STATE CURRENT (AMPS) 00 0 50 5.0 0.1 0 T J = 5 C 3.0.0, INSTANTANEOUS ON STATE VOLTAGE (VOLTS) Figure 5. Typical Hold Current Figure 6. Typical On State Characteristics
PACKAGE DIMENSIONS TO 0AB CASE 1A 07 ISSUE Z H Q Z L V G B 1 3 N D A K F T U C T SEATING PLANE S R J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, 198.. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 70 0.60 1.8 15.75 B 80 0.05 9.66 18 C 0.160 0.190.07.8 D 0.05 0.035 0.6 0.88 F 0.1 0.17 3.61 3.73 G 0.095 0.5..66 H 0.1 0.155.80 3.93 J 0.01 0.0 6 5 K 00 6 1.70 1.7 L 0.05 0.060 1.15 1.5 N 0.190.83 5.33 Q 0.0 0..5 3.0 R 0.080 0.1.79 S 0.05 0.055 1.15 1.39 T 35 55 5.97 6.7 U 0.000 0.050 0.00 1.7 V 0.05 1.15 Z 0.080 STYLE : PIN 1. MAIN TERMINAL 1. MAIN TERMINAL 3.. MAIN TERMINAL ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8017 USA Phone: 303 675 175 or 800 3 3860 Toll Free USA/Canada Fax: 303 675 176 or 800 3 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 1 33 790 9 Japan Customer Focus Center Phone: 81 3 5773 3850 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MAC3A/D