MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( Suffix) Electrically Similar to Popular TIP and TIP Series Epoxy Meets UL 9 V @ in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Max Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CB Vdc Emitter Base Voltage V EB Vdc Collector Current Continuous I C 6 Adc Collector Current Peak I CM Adc Base Current I B Adc Total Power Dissipation @ T C = C Derate above C Total Power Dissipation (Note ) @ T A = C Derate above C Operating and Storage Junction Temperature Range P D.6 P D.7. W W/ C W W/ C T J, T stg 6 to + C ESD Human Body Model HBM B V ESD Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. These ratings are applicable when surface mounted on the minimum pad sizes recommended. BASE SILICON POWER TRANSISTORS 6 AMPERES VOLTS, WATTS CASE STYLE CASE 69D STYLE MARKING DIAGRAMS AYWW JxCG COMPLEMENTARY COLLECTOR, EMITTER BASE A = Assembly Location Y = Year WW = Work Week JxC = Device Code x = or G = Pb Free Package COLLECTOR, EMITTER AYWW JxCG ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, August, Rev. Publication Order Number: MJDC/D
MJDC (NPN), MJDC (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 6. C/W Thermal Resistance, Junction to Ambient (Note ) R JA 7. C/W. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector Emitter Sustaining Voltage (Note ) (I C = madc, I B = ) Collector Cutoff Current (V CE = 6 Vdc, I B = ) Collector Cutoff Current (V CE = Vdc, V EB = ) Emitter Cutoff Current (V BE = Vdc, I C = ) ON CHARACTERISTICS (Note ) CEO(sus) I CEO I CES I EBO Vdc Adc Adc madc DC Current Gain (I C =. Adc, V CE = Vdc) (I C = Adc, V CE = Vdc) h FE 7 Collector Emitter Saturation Voltage (I C = 6 Adc, I B = 6 madc) Base Emitter On Voltage (I C = 6 Adc, V CE = Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note ) (I C = madc, V CE = Vdc, f test = MHz) Small Signal Current Gain (I C = Adc, V CE = Vdc, f = khz). Pulse Test: Pulse Width s, Duty Cycle %.. f T = h fe f test. CE(sat). V BE(on) f T h fe Vdc Vdc MHz
MJDC (NPN), MJDC (PNP) TYPICAL CHARACTERISTICS T A. T C V CC + V PD, POWER DISSIPATION (WATTS). T C T A SURFACE MOUNT 7 T, TEMPERATURE ( C) + V - 9 V s t r, t f ns DUTY CYCLE = % R B - V D SCOPE R B and R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D MUST BE FAST RECOVERY TYPE, e.g.: MSB USED ABOVE I B ma MSD6 USED BELOW I B ma REVERSE ALL POLARITIES FOR PNP. R C Figure. Power Derating Figure. Switching Time Test Circuit hfe, DC CURRENT GAIN 7 7 T J = C C - C V CE = V t, TIME ( s) μ.7....7. t r T J = C V CC = V I C /I B = t d @ V BE(off) V..6...6.....6 6..6 6 Figure. DC Current Gain Figure. Turn On Time V, VOLTAGE (VOLTS).6..8 T J = C V CE(sat) @ I C /I B =... V BE @ V CE = V. t f V BE(sat) @ I C /I B =.7.6.....6 6.6....6 t, TIME ( s) μ.7 t s T J = C V CC = V I C /I B = I B = I B 6 Figure. On Voltages Figure 6. Turn Off Time
MJDC (NPN), MJDC (PNP) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS).6..8. I C = A. A I B, BASE CURRENT (ma) T J = C A C, CAPACITANCE (pf) 7 T J = C C ib C ob V R, REVERSE VOLTAGE (VOLTS) Figure 7. Collector Saturation Region Figure 8. Capacitance r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED).7....7.. D =... SINGLE PULSE. R JC(t) = r(t) R JC R JC = 6. C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) JC(t) P (pk) t t DUTY CYCLE, D = t /t....... t, TIME (ms) Figure 9. Thermal Response.... dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED V CEO T C = C SINGLE PULSE T J = C s ms MJDC, C 7 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) s ms 7 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on T J(pk) = C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) C. T J(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure. Maximum Forward Bias Safe Operating Area
MJDC (NPN), MJDC (PNP) ORDERING INFORMATION MJDCRLG MJDCTG NJVMJDCTG* MJDCG MJDCG MJDCRLG NJVMJDCRLG* MJDCTG NJVMJDCTG* Device Package Type Package Shipping 69D,8 / Tape & Reel, / Tape & Reel, / Tape & Reel 7 Units / Rail 7 Units / Rail,8 / Tape & Reel,8 / Tape & Reel, / Tape & Reel, / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable
MJDC (NPN), MJDC (PNP) PACKAGE DIMENSIONS (SINGLE GAUGE) CASE ISSUE D L L b e E b b A D B DETAIL A c. (.) M C A C c H L GAUGE PLANE L L DETAIL A ROTATED 9 CW A H C Z SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.M, 99.. CONTROLLING DIMENSION: INCHES.. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b, L and Z.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.6 INCHES PER SIDE.. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.86.9.8.8 A.... b.6.89 b...76. b.8.7.6 c.8..6.6 c.8..6.6 D...97 6. E.6 6. 6.7 e.9 BSC.9 BSC H.7. 9.. L.7..78 L.8 REF.7 REF L. BSC BSC L.89.7 L.. Z.9 SOLDERING FOOTPRINT* 6...8...8 STYLE : PIN. BASE. COLLECTOR. EMITTER. COLLECTOR.8.8.6.6 6.7. SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6
MJDC (NPN), MJDC (PNP) PACKAGE DIMENSIONS CASE 69D ISSUE C V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH. S T SEATING PLANE F G A K D PL J. (.) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A...97 6. B.6 6. 6.7 C.86.9.9.8 D.7.69.88 E.8..6 8 F.7..9. G.9 BSC.9 BSC H...87. J.8..6 8 K..8 8.89 9.6 R.8.. S..6. V.89.7 Z.9 STYLE : PIN. BASE. COLLECTOR. EMITTER. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 USA Phone: 67 7 or 8 86 Toll Free USA/Canada Fax: 67 76 or 8 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 98 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 8 87 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJDC/D