FDZ93P P-Channel.5V Specified PowerTrench BGA MOSFET V,.6A, 6mΩ Features Max r DS(on) = 6mΩ at V GS =.5V, I D =.6A Max r DS(on) = 7mΩ at V GS =.5V, I D = 3.6A Occupies only.5 mm of PCB area. Less than 5% of the area of SSOT-6. Ultra-thin package: less than.8 mm height when mounted to PCB. Outstanding thermal transfer characteristics: times better than SSOT-6. Ultra-low Qg x r DS(on) figure-of-merit. RoHS Compliant. GATE BOTTOM General Description November 6 Combining Fairchild's advanced.5v specified PowerTrench process with state of the art BGA packaging process, the FDZ93P minimizes both PCB space and r DS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capability,ultra-low profile packaging, low gate charge, and low r DS(on). Application Battery management Load switch Battery protection TOP G S D tm MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ± V Drain Current -Continuous T I A = 5 C (Note a).6 D -Pulsed A P D Power Dissipation T A = 5 C (Note a).7 W T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient (Note a) 7 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity E FDZ93P 7 8mm 3 units 6 Fairchild Semiconductor Corporation
Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 5µA, V GS = V V BV DSS Breakdown Voltage Temperature I T J Coefficient D = 5µA, referenced to 5 C 3 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6V, V GS = V µa I GSS Gate to Source Leakage Current V GS = ±V, V DS = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5µA.6.8.5 V V GS(th) T J r DS(on) (note ) Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance I D = 5µA, referenced to 5 C 3 mv/ C V GS =.5V, I D =.6A 36 6 V GS =.5V, I D = 3.6A 58 7 V GS =.5V, I D =.6A,T J =5 C 7 65 I D(on) On to State Drain Current V GS =.5V, V DS = 5V A g FS Forward Transconductance V DS = 5V, I D =.6A 3 S Dynamic Characteristics C iss Input Capacitance 75 pf V DS = V, V GS = V, C oss Output Capacitance 67 pf f = MHz C rss Reverse Transfer Capacitance 9 pf R g Gate Resistance f = MHz 6 Ω Switching Characteristics (note ) t d(on) Turn-On Delay Time ns V DD = V, I D = A t r Rise Time ns V GS =.5V, R GEN = 6Ω t d(off) Turn-Off Delay Time 35 ns t f Fall Time 7 3 ns Q g(tot) Total Gate Charge at V V DS = V,I D =.6A 7.5 nc Q gs Gate to Source Gate Charge V GS =.5V.5 nc Q gd Gate to Drain Miller Charge. nc mω Drain-Source Diode Characteristics I S Maximum continuous Drain-Source Diode Forward Current. A V SD Source to Drain Diode Forward Voltage V GS = V, I S =.A (Note ).7. V t rr Reverse Recovery Time 7 ns I F =.6A, di/dt = A/µs Q rr Reverse Recovery Charge 5 nc Notes: : R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. The thermal resistance from the junction to the circuit board side of the solder ball, R θjb is defined for reference. For R θjc the thermal reference point for the case is defined as the top surface of the copper chip carrier. R θjc and R θjb are guaranteed by design while R θja is determined by the user's board design. a. 7 C/W when mounted on a in pad of oz copper,.5 X.5 X.6 thick PCB b. 57 C/W when mounted on a minimum pad of oz copper : Pulse Test: Pulse Width < 3µs, Duty cycle <.%.
Typical Characteristics T J = 5 C unless otherwise noted r DS(ON),NORMALIZED -ID, DRAIN CURRENT (A) DRAIN TO SOURCE ON-RESISTANCE 8 6 PULSE DURATION = 3µs DUTY CYCLE = %MAX..5..5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure..6....8 I D = -.6A V GS = -.5V V GS = -3.V V GS = -3.5V V GS = -.V r DS(ON), NORMALIZED.6 6 8 -I D, DRAIN CURRENT(A) On Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage.6-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO DRAIN TO SOURCE ON-RESISTANCE SOURCE ON-RESISTANCE (mω).6..8.. 5 5 V GS = -.V T J = 5 o C I D = -.3A PULSE DURATION = 3µs DUTY CYCLE = %MAX T J = 5 o C V GS = -.5V V GS = -3.V V GS = - 3.5V PULSE DURATION = 3µs DUTY CYCLE = %MAX 3 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage -I D, DRAIN CURRENT (A) 8 6 PULSE DURATION = 3µs DUTY CYCLE = %MAX T J = 5 o C T J = -55 o C T J = 5 o C V DS =-5V.5..5..5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE DRAIN CURRENT (A).. E-3 V GS = V T J = 5 o C T J = 5 o C T J = -55 o C E-....6.8.. -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = 5 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -ID, DRAIN CURRENT (A) 5 3 6 8 Q g, GATE CHARGE(nC) Figure 7. 5 r DS(on) LIMIT V DD = -5V V DD = -V V DD = -5V. -V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage. VGS = -.5V SINGLE PULSE Rthja = 57 O C/W T A = 5 O C.. -V DS, DRAIN to SOURCE VOLTAGE (V) us ms ms ms s s DC 5 CAPACITANCE (pf) P(PK), PEAK TRANSIENT POWER (W) 3 5 5 5 f = MHz V GS = V T A = 5 o C C iss C oss C rss - - 3 t, PULSE WIDTH (s) SINGLE PULSE Rthja = 57 O C/W FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: 5 T I = I A 5 ----------------------- 5 Figure 9. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, Z θjc.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. SINGLE PULSE P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A E-3 - -3 - - 3 t, RECTANGULAR PULSE DURATION (s) Figure. Transient Thermal Response Curve
Dimensional Pad and Layout 5
FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E CMOS EnSigna FACT FAST FASTr FPS FRFET FACT Quiet Series GlobalOptoisolator GTO HiSeC I C i-lo ImpliedDisconnect IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro Across the board. Around the world. The Power Franchise Programmable Active Droop OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power7 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM TinyBoost TinyBuck TinyPWM TinyPower TinyLogic TINYOPTO TruTranslation UHC UniFET UltraFET VCX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I