Order code V DS R DS(on) max. I D

Datasheet N-channel 6 V, 165 mω typ., 18 A, MDmesh DM6 Power MOSFET in a TO 22FP package Features Order code V DS R DS(on) max. I D STF26N6DM6 6 V 195 mω 18 A TO-22FP D(2) 1 2 3 Fast-recovery body diode Lower R DS(on) per area vs previous generation Low gate charge, input capacitance and resistance 1% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) AM15572v1_no_tab Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q rr ), recovery time (t rr ) and excellent improvement in R DS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STF26N6DM6 Product summary Order code Marking Package Packing STF26N6DM6 26N6DM6 TO-22FP Tube DS12863 - Rev 1 - December 218 For further information contact your local STMicroelectronics sales office. www.st.com

Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ±25 V I Drain current (continuous) at T C = 25 C 18 A D Drain current (continuous) at T C = 1 C 11 A I DM (1) Drain current (pulsed) 6 A P TOT Total power dissipation at T C = 25 C 3 W dv/dt (2) Peak diode recovery voltage slope 5 V/ns dv/dt (3) MOSFET dv/dt ruggedness 1 V/ns V ISO T stg T j Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, T C = 25 C) Storage temperature range Operating junction temperature range 2.5 kv -55 to 15 C 1. Pulse width is limited by safe operating area. 2. I SD 18 A, di/dt 9 A/µs, V DS(peak) < V (BR)DSS, V DD = 4 V 3. V DS 48 V Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 4.17 C/W R (1) thj-amb Thermal resistance junction-ambient 5 C/W 1. When mounted on FR-4 board of inch², 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I AR Avalanche current, repetitive or not repetitive (pulse width limited by T jmax ) 4 A E AS Single pulse avalanche energy (starting T J = 25 C, I D = I AR, V DD = 5 V) 36 mj DS12863 - Rev 1 page 2/13

Electrical characteristics 2 Electrical characteristics T C = 25 C unless otherwise specified Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage V GS = V, I D = 1 ma 6 V V GS = V, V DS = 6 V 5 µa I DSS Zero gate voltage drain current V GS = V, V DS = 6 V, T C = 125 C (1) 1 µa I GSS Gate-body leakage current V DS = V, V GS = ±25 V ±5 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 25 µa 3.25 4 4.75 V R DS(on) Static drain-source on-resistance V GS = 1 V, I D = 9 A 165 195 mω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance - 94 - pf C oss Output capacitance V DS = 1 V, f = 1 MHz, V GS = V - 75 - pf C rss Reverse transfer capacitance - 4 - pf C oss eq. (1) Equivalent output capacitance V DS = to 48 V, V GS = V - 157 - pf R G Intrinsic gate resistance f = 1 MHz, I D = A - 4.8 - Ω Q g Total gate charge V DD = 48 V, I D = 18 A, - 24 - nc Q gs Gate-source charge V GS = to 1 V - 6 - nc (see Figure 14. Test circuit for gate Q gd Gate-drain charge charge behavior) - 11.5 - nc 1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from to 8% V DSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 3 V, I D = 9 A, - 13 - ns t r Rise time R G = 4.7 Ω, V GS = 1 V - 11 - ns t d(off) Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and - 39 - ns t f Fall time Figure 18. Switching time waveform) - 8 - ns DS12863 - Rev 1 page 3/13

Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 18 A I (1) SDM Source-drain current (pulsed) - 6 A V (2) SD Forward on voltage V GS = V, I SD = 18 A - 1.6 V t rr Reverse recovery time I SD = 18 A, di/dt = 1 A/µs, - 1 ns Q rr Reverse recovery charge V DD = 6 V -.35 µc I RRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode - 7 A recovery times) t rr Reverse recovery time I SD = 18 A, di/dt = 1 A/µs, - 17 ns Q rr Reverse recovery charge V DD = 6 V, T j = 15 C - 1.2 µc I RRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 12 A 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 3 µs, duty cycle 1.5 %. DS12863 - Rev 1 page 4/13

Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Normalized thermal impedance I D (A) GADG6122181128SOA 1 1 Operation in this area is limited by RDS(on) tp = 1 μs tp = 1 ms 1 TC = 25 C, TJ 15 C, single pulse tp = 1 ms 1-1 1-1 1 1 1 1 2 tp = 1 μs V DS (V) Figure 3. Output characteristics Figure 4. Transfer characteristics I D (A) 5 GADG2911218826OCH V GS = 1 V V GS = 9 V V GS = 8 V I D (A) 5 V DS = 2 V GADG2911218826TCH 4 4 3 V GS = 7 V 3 2 2 1 V GS = 6 V 1 4 8 12 16 2 V DS (V) 4 5 6 7 8 9 V GS (V) Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations V DS (V) 6 V DD = 48 V, I D = 18 A GADG2911218831QVG V GS (V) 12 C (pf) GADG2911218831CVR 5 V DS Qg 1 1 3 C ISS 4 3 Qgs Qgd 8 6 1 2 C OSS 2 1 4 2 1 1 f = 1 MHz C RSS 4 8 12 16 2 24 Q g (nc) 1 1 1 1 1 2 V DS (V) DS12863 - Rev 1 page 5/13

Electrical characteristics (curves) Figure 7. Static drain-source on-resistance Figure 8. Normalized on-resistance vs temperature R DS(on) (mω) GADG29112181528RID R DS(on) (norm.) GADG2911218832RON 18 2.5 175 17 165 V GS = 1 V 2. 1.5 V GS = 1 V 16 1. 155.5 15 3 6 9 12 15 18 I D (A) -75-25 25 75 125 T j ( C) Figure 9. Normalized gate threshold voltage vs temperature Figure 1. Normalized V (BR)DSS vs temperature V GS(th) (norm.) GADG2911218154VTH V (BR)DSS (norm.) GADG2911218151BDV 1.1 1.1 1. 1.5.9 I D = 25 µa 1. I D = 1 ma.8.95.7.9.6-75 -25 25 75 125 T j ( C).85-75 -25 25 75 125 T j ( C) Figure 11. Output capacitance stored energy Figure 12. Source-drain diode forward characteristics E OSS (µj) GADG2911218155EOS V SD (V) GADG29112181528SDF 1 1.1 T J = -5 C 8 6 4 1..9.8.7 T J = 25 C T J = 15 C 2.6 1 2 3 4 5 6 V DS (V).5 3 6 9 12 15 18 I SD (A) DS12863 - Rev 1 page 6/13

Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior V DD RL VD RL + 22 μf 3.3 μf VDD V GS I G = CONST 1 Ω D.U.T. VGS pulse width RG D.U.T. pulse width 22 μf + 2.7 kω 47 kω V G 1 kω AM1469v1 AM1468v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit G 25 Ω A D D.U.T. S B A fast diode B A B G 1 µh 3.3 1 D µf + µf VDD D.U.T. VD ID L + 22 µf 3.3 µf VDD + _ RG S Vi pulse width D.U.T. AM1471v1 AM147v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform t on t off V(BR)DSS t d(on) t r t d(off) t f VD 9% 9% IDM ID 1% V DS 1% VDD VDD V GS 9% AM1472v1 1% AM1473v1 DS12863 - Rev 1 page 7/13

Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS12863 - Rev 1 page 8/13

TO-22FP package information 4.1 TO-22FP package information Figure 19. TO-22FP package outline 71251_Rev_12_B DS12863 - Rev 1 page 9/13

TO-22FP package information Table 8. TO-22FP package mechanical data Dim. mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E.45.7 F.75 1 F1 1.15 1.7 F2 1.15 1.7 G 4.95 5.2 G1 2.4 2.7 H 1 1.4 L2 16 L3 28.6 3.6 L4 9.8 1.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DS12863 - Rev 1 page 1/13

Revision history Table 9. Document revision history Date Version Changes 7-Dec-218 1 First release. DS12863 - Rev 1 page 11/13

Contents Contents 1 Electrical ratings...2 2 Electrical characteristics...3 2.1 Electrical characteristics (curves)... 5 3 Test circuits...7 4 Package information...8 4.1 TO-22FP package information...8 Revision history...11 DS12863 - Rev 1 page 12/13

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 218 STMicroelectronics All rights reserved DS12863 - Rev 1 page 13/13