256K (32K x 8) OTP EPROM AT27C256R

Similar documents
4-Megabit (512K x 8) OTP EPROM AT27C040

1-Megabit (128K x 8) Unregulated Battery-Voltage OTP EPROM AT27BV010

4-Megabit (512K x 8) OTP EPROM AT27C040. Features. Description. Pin Configurations


8Mb (1M x 8) One-time Programmable, Read-only Memory

SOIC (SOP) NC A8 A9 A10 A11 A12 A13 A14 A15 A16 NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 BYTE/VPP GND O15/A-1 GND O7 O14 O6 O13 O5 O12 O4 VCC

1-Megabit (64K x 16) OTP EPROM AT27C1024

4-Megabit (256K x 16) OTP EPROM AT27C4096

8Mb (1M x 8) One-time Programmable, Read-only Memory

1Mb (128K x 8) Low Voltage, One-time Programmable, Read-only Memory

256K (32K x 8) Unregulated Battery. Programmable, Read-only Memory

256K (32K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM AT27BV256

512K (64K x 8) Unregulated Battery. Programmable, Read-only Memory

Fast read access time 70ns Low-power CMOS operation 100μA max standby 30mA max active at 5MHz. JEDEC standard packages 32-lead PDIP 32-lead PLCC

Battery-Voltage. 1-Megabit (128K x 8) Unregulated OTP EPROM AT27BV010. Features. Description. Pin Configurations

1Mb (128K x 8) Unregulated Battery Voltage, One-time Programmable, Read-only Memory

Battery-Voltage. 1-Megabit (64K x 16) Unregulated. High-Speed OTP EPROM AT27BV1024. Features. Description. Pin Configurations

1-Megabit (128K x 8) OTP EPROM AT27C010

256K (32K x 8) Paged Parallel EEPROM AT28C256

1Mb (64K x 16) Unregulated Battery Voltage, High-speed, One-time Programmable, Read-only Memory

8-Megabit (1M x 8) OTP EPROM AT27C080. Features. Description. Pin Configurations

1-Megabit (64K x 16) OTP EPROM AT27C1024

2-megabit (256K x 8) Unregulated Battery-Voltage High-speed OTP EPROM AT27BV020

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory AT29BV040A

2-Megabit (128K x 16) OTP EPROM AT27C2048

512K (64K x 8) Multiplexed. Addresses/Outputs. Low-voltage OTP EPROM AT27LV520

HT27C020 OTP CMOS 256K 8-Bit EPROM

Am27C Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM

NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM

NM27P Bit (256k x 8) POP Processor Oriented CMOS EPROM

NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM

NM27C ,288-Bit (64K x 8) High Performance CMOS EPROM

FM27C ,144-Bit (32K x 8) High Performance CMOS EPROM

NTE27C256 12D, NTE27C256 15D, NTE27C256 70D Integrated Circuit 256 Kbit (32Kb x 8) UV EPROM 28 Lead DIP Type Package

NMC27C32B Bit (4096 x 8) CMOS EPROM

NTE27C D Integrated Circuit 2 Mbit (256Kb x 8) UV EPROM

NMC27C64 65,536-Bit (8192 x 8) CMOS EPROM

PY263/PY264. 8K x 8 REPROGRAMMABLE PROM FEATURES DESCRIPTION. EPROM Technology for reprogramming. Windowed devices for reprogramming.

27C Bit ( x 8) UV Erasable CMOS PROM Military Qualified

ELECTROSÓN M27C Mbit (128Kb x8) UV EPROM and OTP EPROM

P4C164LL. VERY LOW POWER 8Kx8 STATIC CMOS RAM FEATURES DESCRIPTION V CC. Current (Commercial/Industrial) Operating: 55 ma CMOS Standby: 3 µa

P4C1257/P4C1257L. ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS FEATURES DESCRIPTION. Full CMOS. Separate Data I/O

P4C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES DESCRIPTION V CC. Current (Commercial/Industrial) Operating: 70mA/85mA CMOS Standby: 100µA/100µA

NM27C Bit (64K x 8) High Performance CMOS EPROM

P4C1299/P4C1299L. ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES DESCRIPTION. Full CMOS, 6T Cell. Data Retention with 2.0V Supply (P4C1299L)

M27C Mbit (512Kb x 8) UV EPROM and OTP EPROM. Feature summary

Obsolete Product(s) - Obsolete Product(s)

P4C1041 HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM

M27C256B. 256 Kbit (32Kb 8) UV EPROM and OTP EPROM. Feature summary

E M27V Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM

Pm39LV512 / Pm39LV010

256K (32K x 8) CMOS EPROM TSOP A11 A3 14 V PP A12 A7 A6 A5 A4 A3 PLCC VSOP A13 A14 A Microchip Technology Inc.

IS39LV040 / IS39LV010 / IS39LV512

Highperformance EE PLD ATF22V10B. Features. Logic Diagram. Pin Configurations. All Pinouts Top View

M27C Mbit (256Kb x 8) UV EPROM and OTP EPROM

P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM

M27C Mbit (256Kb x16) UV EPROM and OTP EPROM

524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM

5V 128K X 8 HIGH SPEED CMOS SRAM


Highperformance EE PLD ATF22V10B ATF22V10BQ ATV22V10BQL

M27W Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM

M27C Megabit (512K x 8) OTP EPROM

KEY FEATURES. Immune to Latch-UP Fast Programming. ESD Protection Exceeds 2000 V Asynchronous Output Enable GENERAL DESCRIPTION TOP VIEW A 10

2K x 8 Reprogrammable PROM

SPI Serial EEPROMs AT25128A AT25256A

M27C Mbit (1Mb x 8) UV EPROM and OTP EPROM

GLS27SF / 1 / 2 / GLS27SF010 / GLS27SF020

M27C Mbit (128Kb x8) UV EPROM and OTP EPROM

TC4421/TC A High-Speed MOSFET Drivers. General Description. Features. Applications. Package Types (1)

M27C Kbit (64K x8) UV EPROM and OTP EPROM. Features

E M27C Mbit (2Mb x 8 or 1Mb x 16) UV EPROM and OTP EPROM

M27128A. NMOS 128 Kbit (16Kb x 8) UV EPROM

I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 A 16 I/O 7

8K x 8 EPROM CY27C64. Features. Functional Description. fax id: 3006

E M27C Mbit (2Mb x8 or 1Mb x16) UV EPROM and OTP EPROM

GENERAL DESCRIPTION FEATURES. FEDR27V3202F Semiconductor This version: Oct MR27V3202F

28C256T. 256K EEPROM (32K x 8-Bit) Memory DESCRIPTION: FEATURES: Logic Diagram 28C256T. RAD-PAK radiation-hardened against natural space radiation


DS1270W 3.3V 16Mb Nonvolatile SRAM


2M Async Fast SRAM. Rev. No. History Issue Date 1.0 Initial issue Apr..15,2014

4M Async Fast SRAM. Rev. No. History Issue Date 1.0 Initial issue Apr.15,2014

EEPROM AS58LC K x 8 EEPROM Radiation Tolerant. PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS MIL-PRF-38535

QS54/74FCT373T, 2373T. High-Speed CMOS Bus Interface 8-Bit Latches MDSL QUALITY SEMICONDUCTOR, INC. 1 DECEMBER 28, 1998

Highperformance EE PLD ATF16LV8C

1M Async Fast SRAM. Revision History CS16FS1024(3/5/W) Rev. No. History Issue Date

E M27C Mbit (2Mb x 8 or 1Mb x 16) UV EPROM and OTP EPROM

16M Async Fast SRAM. Rev. No. History Issue Date 1.0 Initial issue Apr. 15,2014

DS Tap High Speed Silicon Delay Line

EEPROM AS8ER128K32 FUNCTIONAL BLOCK DIAGRAM. 128K x 32 Radiation Tolerant EEPROM. PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS

NM93C56 2K-Bit Serial CMOS EEPROM (MICROWIRE Bus Interface)

TMS27C BY 16-BIT UV ERASABLE TMS27PC BY 16-BIT PROGRAMMABLE READ-ONLY MEMORIES

CD4538 Dual Precision Monostable

64-Macrocell MAX EPLD

I/O 1 I/O 2 I/O 3 A 10 6

128K (16K x 8-Bit) CMOS EPROM

FST Bit Bus Switch

Functional Block Diagram. Row Decoder. 512 x 512 Memory Array. Column I/O. Input Data Circuit. Column Decoder A 9 A 14. Control Circuit

DS in-1 Silicon Delay Line

Transcription:

Features Fast Read Access Time 45 ns Low-Power CMOS Operation 100 µa Max Standby 20 ma Max Active at 5 MHz JEDEC Standard Packages 28-lead PDIP 32-lead PLCC 28-lead TSOP and SOIC 5V ± 10% Supply High Reliability CMOS Technology 2,000V ESD Protection 200 ma Latchup Immunity Rapid Programming Algorithm 100 µs/byte (Typical) CMOS and TTL Compatible Inputs and Outputs Integrated Product Identification Code Industrial and Automotive Temperature Ranges Green (Pb/Halide-free) Packaging Option 256K (32K x 8) OTP EPROM 1. Description The is a low-power, high-performance 262,144-bit one-time programmable read-only memory (OTP EPROM) organized 32K by 8 bits. It requires only one 5V power supply in normal read mode operation. Any byte can be accessed in less than 45 ns, eliminating the need for speed reducing WAIT states on high-performance microprocessor systems. Atmel s scaled CMOS technology provides low-active power consumption, and fast programming. Power consumption is typically only 8 ma in Active Mode and less than 10 µa in Standby. The is available in a choice of industry-standard JEDEC-approved one time programmable (OTP) plastic DIP, PLCC, SOIC, and TSOP packages. All devices feature two-line control (CE, OE) to give designers the flexibility to prevent bus contention. With 32K byte storage capability, the allows firmware to be stored reliably and to be accessed by the system without the delays of mass storage media. Atmel s has additional features to ensure high quality and efficient production use. The Rapid Programming Algorithm reduces the time required to program the part and guarantees reliable programming. Programming time is typically only 100 µs/byte. The Integrated Product Identification Code electronically identifies the device and manufacturer. This feature is used by industry-standard programming equipment to select the proper programming algorithms and voltages.

3. System Considerations 4. Block Diagram Switching between active and standby conditions via the Chip Enable pin may produce transient voltage excursions. Unless accommodated by the system design, these transients may exceed datasheet limits, resulting in device non-conformance. At a minimum, a 0.1 µf high frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This capacitor should be connected between the V CC and Ground terminals of the device, as close to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit boards with large EPROM arrays, a 4.7 µf bulk electrolytic capacitor should be utilized, again connected between the V CC and Ground terminals. This capacitor should be positioned as close as possible to the point where the power supply is connected to the array. 5. Absolute Maximum Ratings* Temperature Under Bias... -55 C to +125 C Storage Temperature... -65 C to +150 C Voltage on Any Pin with Respect to Ground...-2.0V to +7.0V (1) Voltage on A9 with Respect to Ground...-2.0V to +14.0V (1) *NOTICE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. V PP Supply Voltage with Respect to Ground...-2.0V to +14.0V (1) Note: 1. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is V CC + 0.75V dc which may overshoot to +7.0 volts for pulses of less than 20 ns. 3

6. Operating Modes Mode/Pin CE OE Ai V PP Outputs Read V IL V IL Ai V CC D OUT Output Disable V IL V IH X (1) V CC High Z Standby V IH X (1) X (1) V CC High Z Rapid Program (2) V IL V IH Ai V PP D IN PGM Verify (2) X (1) V IL Ai V PP D OUT Optional PGM Verify (2) V IL V IL Ai V CC D OUT PGM Inhibit (2) V IH V IH X (1) V PP High Z V Identification Code Product Identification (4) V IL V IL A0 = V IH or V IL (3) A9 = V H A1 - A14 = V IL CC Notes: 1. X can be V IL or V IH. 2. Refer to Programming Characteristics. 3. V H = 12.0 ± 0.5V. 4. Two identifier bytes may be selected. All Ai inputs are held low (V IL ), except A9 which is set to V H and A0 which is toggled low (V IL ) to select the Manufacturer s Identification byte and high (V IH ) to select the Device Code byte. 7. DC and AC Operating Conditions for Read Operation -45-70 Operating Temp. (Case) Ind. -40 C - 85 C -40 C - 85 C Auto. -40 C - 125 C V CC Supply 5V ± 10% 5V ± 10% 8. DC and Operating Characteristics for Read Operation Symbol Parameter Condition Min Max Units Ind. ±1 µa I LI Input Load Current V IN = 0V to V CC Auto. ±5 µa Ind. ±5 µa I LO Output Leakage Current V OUT = 0V to V CC Auto. ±10 µa (2) (1) I PP1 V PP Read/Standby Current V PP = V CC 10 µa I SB I (1) SB1 (CMOS), CE = V CC ± 0.3V 100 µa V CC Standby Current I SB2 (TTL), CE = 2.0 to V CC + 0.5V 1 ma I CC V CC Active Current f = 5 MHz, I OUT = 0 ma, E = V IL 20 ma V IL Input Low Voltage -0.6 0.8 V V IH Input High Voltage 2.0 V CC + 0.5 V V OL Output Low Voltage I OL = 2.1 ma 0.4 V V OH Output High Voltage I OH = -400 µa 2.4 V Notes: 1. V CC must be applied simultaneously with or before V PP, and removed simultaneously with or after V PP.. 2. V PP may be connected directly to V CC, except during programming. The supply current would then be the sum of I CC and I PP. 4

. 9. AC Characteristics for Read Operation Symbol Parameter Condition Note: 1. See AC Waveforms for Read Operation. -45-70 Min Max Min Max t ACC (1) Address to Output Delay CE = OE = V IL 45 70 ns t CE (1) CE to Output Delay OE = V IL 45 70 ns t OE (1) OE to Output Delay CE = V IL 20 30 ns t DF (1) t OH OE or CE High to Output Float, Whichever Occurred First Output Hold from Address, CE or OE, Whichever Occurred First Units 20 25 ns 7 7 ns 10. AC Waveforms for Read Operation (1) Notes: 1. Timing measurement reference level is 1.5V for -45 devices. Input AC drive levels are V IL = 0.0V and V IH = 3.0V. Timing measurement reference levels for all other speed grades are V OL = 0.8V and V OH = 2.0V. Input AC drive levels are V IL = 0.45V and V IH = 2.4V. 2. OE may be delayed up to t CE - t OE after the falling edge of CE without impact on t CE. 3. OE may be delayed up to t ACC - t OE after the address is valid without impact on t ACC. 4. This parameter is only sampled and is not 100% tested. 5. Output float is defined as the point when data is no longer driven. 5

11. Input Test Waveforms and Measurement Levels For -45 devices only: t R, t F < 5 ns (10% to 90%) For -70 devices: t R, t F < 20 ns (10% to 90%) 12. Output Test Load Note: 1. C L = 100 pf including jig capacitance, except for the -45 devices, where C L = 30 pf. 13. Pin Capacitance f = 1 MHz, T = 25 C (1) Symbol Typ Max Units Conditions C IN 4 6 pf V IN = 0V C OUT 8 12 pf V OUT = 0V Note: 1. Typical values for nominal supply voltage. This parameter is only sampled and is not 100% tested. 6

14. Programming Waveforms (1) Notes: 1. The Input Timing Reference is 0.8V for V IL and 2.0V for V IH. 2. t OE and t DFP are characteristics of the device but must be accommodated by the programmer. 3. When programming the a 0.1 µf capacitor is required across V PP and ground to suppress spurious voltage transients. 15. DC Programming Characteristics T A = 25 ± 5 C, V CC = 6.5 ± 0.25V, V PP = 13.0 ± 0.25V Symbol Parameter Test Conditions Limits I LI Input Load Current V IN = V IL,V IH ±10 µa V IL Input Low Level -0.6 0.8 V V IH Input High Level 2.0 V CC + 1 V V OL Output Low Volt I OL = 2.1 ma 0.4 V V OH Output High Volt I OH = -400 µa 2.4 V I CC2 V CC Supply Current (Program and Verify) 25 ma I PP2 V PP Current CE = V IL 25 ma V ID A9 Product Identification Voltage 11.5 12.5 V Min Max Units 7

16. AC Programming Characteristics T A = 25 ± 5 C, V CC = 6.5 ± 0.25V, V PP = 13.0 ± 0.25V Symbol Parameter Test Conditions (1) Limits t AS Address Setup Time t OES OE Setup Time Input Rise and Fall Times 2 µs t DS Data Setup Time (10% to 90%) 20 ns 2 µs t AH Address Hold Time 0 µs Input Pulse Levels t DH Data Hold Time 0.45V to 2.4V 2 µs t DFP OE High to Output Float Delay (2) 0 130 ns t Input Timing Reference Level VPS V PP Setup Time 2 µs 0.8V to 2.0V t VCS V CC Setup Time 2 µs t PW CE Program Pulse Width (3) Output Timing Reference Level 95 105 µs t OE Data Valid from OE (2) 0.8V to 2.0V 150 ns Notes: 1. V CC must be applied simultaneously or before V PP and removed simultaneously or after V PP. 2. This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven see timing diagram. 3. Program Pulse width tolerance is 100 µsec ± 5%. Min Max Units 2 µs t PRT V PP Pulse Rise Time During Programming 50 ns 17. Atmel s Integrated Product Identification Code Codes Pins A0 O7 O6 O5 O4 O3 O2 O1 O0 Manufacturer 0 0 0 0 1 1 1 1 0 1E Device Type 1 1 0 0 0 1 1 0 0 8C Hex Data 8

19. Ordering Information 19.1 Standard Package t ACC (ns) Active I CC (ma) Standby 45 20 0.1-45JI -45PI -45RI -45TI 70 20 0.1-70JI -70PI -70RI -70TI 20 0.1-70JA -70PA -70RA Ordering Code Package Operation Range Industrial (-40 C to 85 C) Industrial (-40 C to 85 C) Automotive (-40 C to 125 C) Note: Not recommended for new designs. Use Green package option. 19.2 Green Package (Pb/Halide-free) t ACC I CC (ma) (ns) Active Standby 45 20 0.1-45JU -45PU -45RU -45TU 70 20 0.1-70JU -70PU -70RU -70TU Note: 1. The 28-pin SOIC package is not recommended for new designs. Ordering Code Package Operation Range Industrial (-40 C to 85 C) Industrial (-40 C to 85 C) Package Type 28R 32-lead, Plastic J-Leaded Chip Carrier (PLCC) 28-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 28-lead, 0.330" Wide, Plastic Gull Wing Small Outline (SOIC) 28-lead, Thin Small Outline Package (TSOP) 10

20.2 PDIP D PIN 1 E1 A SEATING PLANE L e B1 B A1 Notes: C E eb 0º ~ 15º REF 1. This package conforms to JEDEC reference MS-011, Variation AB. 2. Dimensions D and E1 do not include mold Flash or Protrusion. Mold Flash or Protrusion shall not exceed 0.25 mm (0.010"). COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE A 4.826 A1 0.381 D 36.703 37.338 Note 2 E 15.240 15.875 E1 13.462 13.970 Note 2 B 0.356 0.559 B1 1.041 1.651 L 3.048 3.556 C 0.203 0.381 eb 15.494 17.526 e 2.540 TYP R 2325 Orchard Parkway San Jose, CA 95131 TITLE, 28-lead (0.600"/15.24 mm Wide) Plastic Dual Inline Package (PDIP) DRAWING NO. REV. B 12