NL3HS2222. High-Speed USB 2.0 (480 Mbps) DPDT Switches

Similar documents
NLAS7213. High-Speed USB 2.0 (480 Mbps) DPST Switch

NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches

NS5S1153. DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch

NLAS6234. Audio DPDT Switch with Noise Suppression

NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability

NCN1154. USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability

NLAS4783B. Triple SPDT 1.0 R ON Switch

NLAS3699B. Dual DPDT Ultra Low R ON Switch

NLAS4717EP. 4.5 High Bandwidth, Dual SPDT Analog Switch

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3

P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

P2I2305NZ. 3.3V 1:5 Clock Buffer

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NUF6400MNTBG. 6-Channel EMI Filter with Integrated ESD Protection

NLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection

Is Now Part of To learn more about ON Semiconductor, please visit our website at

NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

NL3S22AH, NL3S22UH. USB Audio Switch

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes

NTLUF4189NZ Power MOSFET and Schottky Diode

NUF6105FCT1G. 6-Channel EMI Filter with Integrated ESD Protection

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes

NUF6010MUT2G. 6-Channel EMI Filter with Integrated ESD Protection

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

NCS2302. Headset Detection Interface with Send/End Detect

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

MUN5311DW1T1G Series.

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

NLHV18T Channel Level Shifter

LM321. Single Channel Operational Amplifier

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m

NB2879A. Low Power, Reduced EMI Clock Synthesizer

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package

NDF10N62Z. N-Channel Power MOSFET

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel

LM339S, LM2901S. Single Supply Quad Comparators

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m

NUS2045MN, NUS3045MN. Overvoltage Protection IC with Integrated MOSFET

P1P Portable Gaming Audio/Video Multimedia. MARKING DIAGRAM. Features

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR

Is Now Part of To learn more about ON Semiconductor, please visit our website at

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m

SNSS35200MR6T1G. 35 V, 5 A, Low V CE(sat) PNP Transistor. 35 VOLTS 5.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 100 m

Is Now Part of To learn more about ON Semiconductor, please visit our website at

NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor

BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS

NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70

MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS


Transcription:

High-Speed USB 2.0 (480 Mbps) DPDT Switches The NL3HS2222 is a DPDT switch optimized for highspeed USB 2.0 applications within portable systems. It features ultralow on capacitance, C ON = 7.5 pf (typ), and a bandwidth above 950 MHz. It is optimized for applications that use a single USB interface connector to route multiple signal types. The C ON and R ON of both channels are suitably low to allow the NL3HS2222 to pass any speed USB data or audio signals going to a moderately resistive terminal such as an external headset. The device is offered in a UQFN10 1.4 mm x 1.8 mm package. Features Optimized FlowThrough Pinout R ON : 5.0 Typ @ = V C ON : 7.5 pf Typ @ = 3.3 V Range: 1.65 V to 4.5 V Typical Bandwidth: 950 MHz 1.4 mm x 1.8 mm x 0.50 mm UQFN10 OVT on Common Signal Pins D+/D up to 5.25 V 8 kv HBM ESD Protection on All Pins These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications High Speed USB 2.0 Data Mobile Phones Portable Devices 1 UQFN10 CASE 488AT AV = Device Code M = Date Code = PbFree Device MARKING DIAGRAM (Note: Microdot may be in either location) ORDERING INFORMATION AV M Device Package Shipping NL3HS2222MUTBG UQFN10 (PbFree) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. NL3HS2222 HS USB XCVR USB CONNECTOR FS USB XCVR or AUDIO AMP Figure 1. Application Diagram Semiconductor Components Industries, LLC, 2016 April, 2016 Rev. 0 1 Publication Order Number: NL3HS2222/D

Figure 2. Pin Connections and Logic Diagram (Top View) Table 1. PIN DESCRIPTION Table 2. TRUTH TABLE Pin S OE HSD1+, HSD1, HSD2+, HSD2, D+, D Control Enable Data Ports Function OE 1 0 0 S X 0 1 HSD1+, HSD1 OFF ON OFF HSD2+, HSD2 OFF OFF ON MAXIMUM RATINGS Symbol Pins Parameter Value Unit Positive DC Supply Voltage 0.5 to +5.5 V V IS HSDn+, Analog Signal Voltage 0.5 to + 0.3 V HSDn D+, D 0.5 to +5.25 V IN S, OE Control Voltage, Enable Voltage 0.5 to +5.5 V I CC Positive DC Supply Current 50 ma T S Storage Temperature 65 to +150 C I IS_CON HSDn+, HSDn, D+, D Analog Signal Continuous CurrentClosed Switch 300 ma I IS_PK HSDn+, HSDn, D+, D Analog Signal Continuous Current 10% Duty Cycle 500 ma I IN S, OE Control Current, Enable Current 20 ma Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECOMMENDED OPERATING CONDITIONS Symbol Pins Parameter Min Max Unit Positive DC Supply Voltage 1.65 4.5 V V IS HSDn+, Analog Signal Voltage GND V HSDn D+, D GND 4.5 V IN S, OE Control Voltage, Enable Voltage GND V T A Operating Temperature 40 +85 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ESD PROTECTION Symbol Parameter Value Unit ESD Human Body Model All Pins 8.0 kv 2

DC ELECTRICAL CHARACTERISTICS NL3HS2222 CONTROL INPUT, OUTPUT ENABLE VOLTAGE (Typical: T = 25 C) Symbol Pins Parameter Test Conditions (V) V IH S, OE Control, Enable HIGH Voltage (See Figure 11) V IL S, OE Control, Enable LOW Voltage (See Figure 11) I IN S, OE Current, Enable Leakage Current 3.3 3.3 40 C to +85 C Min Typ Max 1.25 1.3 1.4 Unit V 0.35 0.4 0.5 0 V IS 1.65 4.5 ±1.0 A V SUPPLY CURRENT AND LEAKAGE (Typical: T = 25 C, = 3.3 V) Symbol Pins Parameter Test Conditions (V) I CC Quiescent Supply Current 0 V IS ; I D = 0 A 0 V IS 0.5 V 1.65 3.6 3.6 4.5 40 C to +85 C Min Typ Max I OZ OFF State Leakage 0 V IS 1.65 4.5 ±0.1 ±1.0 A I OFF D+, D Power OFF Leakage Current 1.0 1.0 0 V IS 0 ±1.0 A Unit A LIMITED V IS SWING ON RESISTANCE (Typical: T = 25 C) Symbol Pins Parameter Test Conditions (V) R ON OnResistance (Note 1) I ON = 8 ma V IS = 0 V to 0.4 V R FLAT R ON OnResistance Flatness (Notes 1 and 2) OnResistance Matching (Notes 1 and 3) I ON = 8 ma V IS = 0 V to 0.4 V I ON = 8 ma V IS = 0 V to 0.4 V 3.3 3.3 3.3 40 C to +85 C Min Typ Max 6.0 5.5 5.0 0.55 0.30 0.20 0.60 0.60 0.60 1. Guaranteed by design. 2. Flatness is defined as the difference between the maximum and minimum value of OnResistance as measured over the specified analog signal ranges. 3. R ON = R ON(max) R ON(min) between HSD1 + and HSD1 or HSD2 + and HSD2. FULL V IS SWING ON RESISTANCE (Typical: T = 25 C) 40 C to +85 C 8.6 7.6 7.0 Unit Symbol Pins Parameter Test Conditions (V) R ON OnResistance I ON = 8 ma V IS = 0 V to 3.3 Min Typ Max 10 8.0 7.0 13.5 9.75 8.50 Unit R FLAT R ON OnResistance Flatness (Notes 4 and 5) OnResistance (Note 4 and 6) I ON = 8 ma V IS = 0 V to 3.3 I ON = 8 ma V IS = 0 V to 3.3 4.5 3.0 2.5 0.60 0.60 0.60 4. Guaranteed by design. 5. Flatness is defined as the difference between the maximum and minimum value of OnResistance as measured over the specified analog signal ranges. 6. R ON = R ON(max) R ON(min) between HSD1 + and HSD1 or HSD2 + and HSD2. 3

AC ELECTRICAL CHARACTERISTICS TIMING/FREQUENCY (Typical: T = 25 C, = 3.3 V, R L = 50, C L = 35 pf, f = 1 MHz) 40C to +85C Symbol Pins Parameter Test Conditions (V) Min Typ Max Unit t ON Closed to Open TurnON Time 1.65 4.5 13.0 30.0 ns (See Figures 4 and 5) t OFF Open to Closed TurnOFF Time (See Figures 4 and 5) T BBM BW BreakBeforeMake Time (See Figure 3) 3 db Bandwidth (See Figure 10) 1.65 4.5 12.0 25.0 ns 1.65 4.5 2.0 ns C L = 5 pf 1.65 4.5 950 MHz ISOLATION (Typical: T = 25 C, = 3.3 V, R L = 50, C L = 5 pf) 40C to +85C Symbol Pins Parameter Test Conditions (V) Min Typ Max Unit O IRR Open OFFIsolation f = 240 MHz 1.65 4.5 22 db (See Figure 6) X TALK HSDn+ to HSDn NonAdjacent Channel Crosstalk f = 240 MHz 1.65 4.5 24 db CAPACITANCE (Typical: T = 25 C, = 3.3 V, R L = 50, C L = 5 pf) 40C to +85C Symbol Pins Parameter Test Conditions Min Typ Max Unit C IN S, OE Control Pin, Enable = 0 V, f = 1 MHz 1.5 pf Capacitance = 0 V, f = 10 MHz 1.0 C ON D+ to ON Capacitance = 3.3 V; OE = 0 V, f = 1 MHz 7.5 HSD1+ or S = 0 V or 3.3 V HSD2+ = 3.3 V; OE = 0 V, f = 10 MHz 6.5 S = 0 V or 3.3 V C OFF HSD1n or HSD2n = 3.3 V; OE = 0 V, f = 240 MHz S = 0 V or 3.3 V OFF Capacitance = V IS = 3.3 V; OE = 0 V, S = 3.3 V or 0 V, f = 1 MHz = V IS = 3.3 V; OE = 0 V, S = 3.3 V or 0 V, f = 10 MHz 5 3.8 pf 2.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4

0.1 F DUT V OUT 50 35 pf GND Switch Select Pin 50 % OF DROOP t BMM VOLTAGE DROOP Figure 3. t BBM (Time BreakBeforeMake) DUT 0 V 50% 50% 0.1 F Open V OUT 50 35 pf V OH 90% 90% V OL t ON t OFF Figure 4. t ON /t OFF DUT 50 0 V 50% 50% Open V OUT 35 pf VOH V OL 10% 10% t OFF t ON Figure 5. t ON /t OFF 5

Reference DUT 50 50 Generator Transmitted 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. V ISO, Bandwidth and V ONL are independent of the input signal direction. V ISO = Off Channel Isolation = 20 Log V OUT for V IN at 100 khz VIN V ONL = On Channel Loss = 20 Log V OUT for V IN at 100 khz to 50 MHz VIN Bandwidth (BW) = the frequency 3 db below V ONL V CT = Use V ISO setup and test to all other switch analog input/outputs terminated with 50 Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/V ONL DETAILED DESCRIPTION High Speed (480Mbps) USB 2.0 Optimized The NL3HS2222 is a DPDT switch designed for USB applications within portable systems. The R ON and C ON of both switches are maintained at industryleading low levels in order to ensure maximum signal integrity for USB 2.0 high speed data communication. The NL3HS2222 switch can be used to switch between high speed (480Mbps) USB signals and a variety of audio or data signals such as full speed USB, UART or even a moderately resistive audio terminal. Over Voltage Tolerant The NL3HS2222 features over voltage tolerant I/O protection on the common signal pins D+/D. This allows the switch to interface directly with a USB connector. The D+/D pins can withstand a short to V BUS, up to 5.25 V, continuous DC current for up to 24 hours as specified in the USB 2.0 specification. This protection is achieved without the need for any external resistors or protection devices. 6

NL3HS2222 Figure 7. Board Schematic 7

Figure 8. Signal Quality Figure 9. Near End Eye Diagram 8

Near End Test Data: Min Max Consecutive jitter range 54.37 73.21 ps Std. Paired JK jitter range 59.14 59.56 ps 200 ps +200 ps Paired KJ jitter range 50.79 34.57 ps Consecutive jitter range 74.43 81.65 ps N.C. Paired JK jitter range 61.60 58.55 ps 200 ps +200 ps Paired KJ jitter range 55.31 48.43 ps Consecutive jitter range 82.55 80.33 ps N.O. Paired JK jitter range 53.50 71.65 ps 200 ps +200 ps Paired KJ jitter range 62.60 47.30 ps 0 0.5 1 MAGNITUDE (db) 1.5 2 2.5 3 3.5 4 4.5 1.0E+6 10.0E+6 100.0E+6 1.0E+9 FREQUENCY (Hz) Figure 10. Magnitude vs. Frequency @ = 3.3 V, All Temperatures I CC Leakage Current as a Function of V IN Voltage (25C) 2.50E03 2.00E03 1.50E03 V 3.3 V I CC 1.00E03 5.00E04 V 0.00E+00 5.00E04 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 V IN (V) Figure 11. I CC vs. V IN, Select Pin, All s, 25C 9

PACKAGE DIMENSIONS UQFN10 1.4x1.8, 0.4P CASE 488AT ISSUE A PIN 1 REFERENCE 2X 2X 10X 0.10 C 0.10 C 0.05 C 0.05 C 9 X L L3 D ÉÉ ÉÉ 1 TOP VIEW A1 SIDE VIEW 3 5 10 6 BOTTOM VIEW A A 10 X b E B e/2 e C SEATING PLANE 0.10 C A B 0.05 C L1 EXPOSED Cu A1 NOTE 3 DETAIL A Bottom View (Optional) ÉÉ DETAIL B Side View (Optional) EDGE OF PACKAGE MOLD CMPD 0.200 0.0079 A3 0.663 0.0261 0.400 0.0157 PITCH MOUNTING FOOTPRINT* 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A 0.45 0.60 A1 0.00 0.05 A3 0.127 REF b 0.15 0.25 D 1.40 BSC E e 1.80 BSC 0.40 BSC L L1 0.30 0.00 0.50 0.15 L3 0.40 0.60 1.700 9 X 0.0669 0.563 0.0221 10 X 0.225 0.0089 SCALE 20:1 2.100 0.0827 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81358171050 10 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative NL3HS2222/D

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: NL3HS2222MUTBG