FDP054N0 N-Channel PowerTrench MOSFET V, 44A, 5.5mΩ Features R DS(on) = 4.6mΩ ( Typ.)@ V GS = 0V, I D = 75A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low R DS(on) High Power and Current Handling Capability RoHS Compliant Description April 202 This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC Converters / Synchronous Rectification D G G D S TO-220 S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage V V GSS Gate to Source Voltage ±20 V Thermal Characteristics - Continuous (T C = 25 o C, Silicon Limited) 44* I D Drain Current - Continuous (T C = o C, Silicon Limited) 02 A - Continuous (T C = 25 o C, Package Limited) 20 I DM Drain Current - Pulsed (Note ) 576 A E AS Single Pulsed Avalanche Energy (Note 2) 53 mj dv/dt Peak Diode Avalanche Energy (Note 3) 6 V/ns P D Power Dissipation (T C = 25 o C) 263 W - Derate above 25 o C.75 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +75 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 20A. Symbol Parameter Ratings Units R θjc Thermal Resistance, Junction to Case 0.57 o C/W R θja Thermal Resistance, Junction to Ambient 62.5 202 Fairchild Semiconductor Corporation
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP054N0 FDP054N0 TO-220 - - 50 Electrical Characteristics T C = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250μA, V GS = 0V, T C = 25 o C - - V ΔBV DSS ΔT J On Characteristics Breakdown Voltage Temperature Coefficient Dynamic Characteristics I D = 250μA, Referenced to 25 o C - 0.0 - V/ o C V DS = V, V GS = 0V - - I DSS Zero Gate Voltage Drain Current μa V DS = V, V GS = 0V, T C = 50 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±20V, V DS = 0V - - ± na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250μA 2.5 3.5 4.5 V R DS(on) Static Drain to Source On Resistance V GS = 0V, I D = 75A - 4.6 5.5 mω g FS Forward Transconductance V GS = 0V, I D = 75A (Note 4) - 92 - S C iss Input Capacitance - 9985 3280 pf V DS = 25V, V GS = 0V C oss Output Capacitance - 935 245 pf f = MHz C rss Reverse Transfer Capacitance - 390 585 pf Q g(tot) Total Gate Charge at 0V - 56 203 nc V DS = 80V, I D = 75A, Q gs Gate to Source Gate Charge - 53 - nc V GS = 0V Q gd Gate to Drain Miller Charge (Note 4,5) - 48 - nc Switching Characteristics t d(on) Turn-On Delay Time - 44 98 ns V DD = 50V, I D = 75A t r Turn-On Rise Time - 92 94 ns V GS = 0V, R GEN = 4.7Ω t d(off) Turn-Off Delay Time - 80 70 ns t f Turn-Off Fall Time (Note 4,5) - 39 88 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 44 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 576 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 75A - -.3 V t rr Reverse Recovery Time V GS = 0V, I SD =75A - 57 - ns Q rr Reverse Recovery Charge di F /dt = A/μs (Note 4) - 2 - nc Notes: : Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.4mH, I AS = 75A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3: I SD 75A, di/dt 200A/μs, V DD BV DSS, Starting T J = 25 C 4: Pulse Test: Pulse width 300μs, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics 2
Typical Performance Characteristics ID, Drain Current[A] Figure. On-Region Characteristics 0 V GS = 5.0 V 0.0 V 8.0 V 7.0 V 6.5 V 6.0 V *Notes:. 250μs Pulse Test 2. T C = 25 o C 0 0. V DS, Drain-Source Voltage[V] 6 Figure 2. Transfer Characteristics 3 4 5 6 7 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature RDS(on) [mω], Drain-Source On-Resistance 7 6 5 4 V GS = 0V V GS = 20V * Note : T C = 25 o C 3 0 200 300 400 I D, Drain Current [A] ID, Drain Current[A] IS, Reverse Drain Current [A] 0 0 0 0 * Notes :. V DS = 20V 2. 250μs Pulse Test 50 o C 50 o C -55 o C 25 o C Notes:. V GS = 0V 25 o C 2. 250μs Pulse Test 0.2 0.4 0.6 0.8.0.2 V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics 000 00 0 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note:. V GS = 0V 2. f = MHz 0. 0 V DS, Drain-Source Voltage [V] C iss C oss C rss 30 VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics 0 8 6 4 2 V DS = 20V V DS = 50V V DS = 80V * Note : I D = 75A 0 0 30 60 90 20 50 80 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage.2..0 0.9 * Notes :. V GS = 0V 2. I D = 0mA 0.8-80 -40 0 40 80 20 60 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 0 Figure 8. On-Resistance Variation vs. Temperature RDS(on), [Normalized] Drain-Source On-Resistance 2.4 2.0.6.2 0.8 * Notes :. V GS = 0V 2. I D = 75A 0.4-80 -40 0 40 80 20 60 200 T J, Junction Temperature [ o C] Figure 0. Maximum Drain Current vs. Case Temperature 50 ID, DRAIN CURRENT (A) 0 THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED DC μs ms R θjc = 0.57 o C/W 0 ms T C = 25 o C ms 0. 0. 0 400 V DS, DRAIN to SOURCE VOLTAGE (V) ID, Drain Current [A] 50 Limitted by package 0 25 50 75 25 50 75 T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve Thermal Response [Z θjc ] 0. 0.0 0.5 0.2 0. 0.05 0.02 0.0 Single pulse * Notes :. Z θjc (t) = 0.57 o C/W Max. 2. Duty Factor, D=t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.00 0-5 0-4 0-3 0-2 0-0 Rectangular Pulse Duration [sec] P DM t t 2 4
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I SD V DS _ L Driver R G Same Type as DUT V GS dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6
Package Dimensions TO-220 Dimensions in Millimeters 7
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise 2Cool AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green Bridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM mwsaver OptoHiT OPTOLOGIC OPTOPLANAR PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I6 8