Applications Military SatCom Phased-Array Radar Applications Point-to-Point Radio Point-to-Multipoint Communications Terminal Amplifiers X = 4.4mm Y = 2.28mm Product Features RF frequency: 18 to 23 GHz Linear Gain: db typ. Psat: 38 dbm typ. Efficiency @ P3dB > 3 % Die Size: < 1.32 sq. mm..2um GaN HEMT 4 mil SiC substrate DC Power: 28 VDC @ 544 ma Product Description The APN149 monolithic GaN HEMT amplifier is a broadband, two-stage power device, designed for use in Point-to-Point and Multipoint Digital Radios, Military SatCom and Radar Applications. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Au-based that is compatible with epoxy and eutectic ti die attach methods. Performance Characteristics (Ta = 25 C) Specification Min Typ Max Unit Frequency 18 23 GHz Linear Gain 19 23 db Input Return Loss 4 11 db Output Return Loss 6 11 db P1db 36 dbm Psat 37.5 38.5 dbm PAE @ Psat 3 % Vd1, Vd2 28 V Vg1-3.5 V Vg2-3.5 V Id1 144 ma Id2 4 ma Absolute Maximum Ratings (Ta = 25 C) Parameter Min Max Unit Vd1, Vd2 28 V Id1 144 ma Id2+Id2a 4 ma Vg1, Vg2 V Input drive level TBD dbm Assy. Temperature 3 deg. C (TBD seconds) Phone: (31) 814 Fax: (31) 812-711 E-mail: as-mps.sales@ngc.com Page 1
Measured Performance Characteristics (Typical Performance at 25 C) Vd = 28. V, Id1 = 144 ma, Id2 = 4 ma * Linear Gain vs. Frequency Power, Gain, PAE% vs. Frequency Gain (d B) 26 24 22 18 16 14 12 1 8 6 4 2 Pout (dbm), Gain (db), PAE% 45 4 35 3 25 15 1 Linear Gain (db) Gain @ Pin= dbm 5 P1dB (dbm) Psat (dbm) PAE% @ PSat 17 18 19 21 22 23 24 Input Return Loss vs. Frequency Output Return Loss vs. Frequency In nput Return Loss (db) - Ou utput Return Loss (db) - -3-3 * Pulsed-Power On-Wafer Phone: (31) 814 Fax: (31) 812-711 E-mail: as-mps.sales@ngc.com Page 2
Measured Performance Characteristics (Typical Performance at 25 C) Vd =. V, Id1 = 144 ma, Id2 = 4 ma * Linear Gain vs. Frequency Power, Gain, PAE% vs. Frequency Gain (d B) 26 24 22 18 16 14 12 1 8 6 4 2 Pout (dbm), Gain (db), PAE% 45 4 35 3 25 15 1 Linear Gain (db) Gain @ Pin=5 dbm 5 P1dB (dbm) Psat (dbm) PAE% @ PSat 17 18 19 21 22 23 24 Input Return Loss vs. Frequency Output Return Loss vs. Frequency In nput Return Loss (db) - Ou utput Return Loss (db) - -3-3 * Pulsed-Power On-Wafer Phone: (31) 814 Fax: (31) 812-711 E-mail: as-mps.sales@ngc.com Page 3
Measured Performance Characteristics (Typical Performance at 25 C) Vd = 28. V, Id1 = 144 ma, Id2 = 4 ma * Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 12..699 43.964.779 19.442.2 36.788.84 13.95 12.5.692 27.965 1.3 37.868.1 113.227.863 143.724 13..72 13.13 1.34 56.793.3 115.571.867 157.66 13.5.71 6.259 1.756 75.77.3 12.387.861 17.158 14..743 23.885 2.312 97.113.2 116.66.854 176.435 14.5.753 41.896 3.187 118.651.3 53.47.822 163.141 15..89 61.628628 4.38 141.688.44 79.825.789 149.562 15.5.843 81.659 5.968 168.862.6 45.166.716 133.98 16..886 16.151 8.76 16.835.6 19.273.597 116.578 16.5.893 125.821 1.849 129.8.9.556.443 99.724 17..83 154.23 13.7 9.315.1 38.819.255 87.416 17.5.713 169.316 15.259 52.758.11 68.439.152 126.751 18..558 168.254 15.61 13.681.1 12.665.242 138.228 18.5.46 164.497497 15.149149 18.93.1111 131.466.284 127.812 19..338 151.417 15.94 5.296.12 168.82.274 112.392 19.5.34 151.17 14.549 8.833.12 159.721.231 91.74..215 144.657 14.221 18.869.14 128.38.164 82.177.5.6 125.765 13.863 138.643.11 11.178.19 65.615 21..89 135.731 14.9 166.63.13 87.99.9 93.235 21.5.91 41.988 14.418 163.337.18 51.42.135 93.37 22..19 58.964 14.261 126.963.1717 16.1818.2 56.643643 22.5.439 77.16 13.245 89.725.15 15.227.324 1.566 23..56 19.18 1.993 51.85.13 49.79.447 28.152 23.5.724 128.47 8.148 18.278.9 71.583.541 61.68 24..727 148.562 5.919 11.422.7 1.55.595 85.387 24.5.82 16.957 4.218 34.985.3 131.781.629 14.385 25..777 17.382 3.155 57.268.2 89.76.661 119.136 25.5.83 177.352 2.293293 77.1959.2 49.11 9 68.681 13.378 3 8 26..789 172.98 1.87 94.49.1 29.848.713 139.718 26.5.775 157.89 1.382 113.16.4.197.733 148.879 27..811 158.238 1.94 127.212.4 55.666.747 156.758 27.5.767 147.132.861 144.51.5 81.846.757 163.728 28..83 142.237.689 158.251.1 63.247.785 17.694 * Pulsed-Power On-Wafer Phone: (31) 814 Fax: (31) 812-711 E-mail: as-mps.sales@ngc.com Page 4
Die Size and Bond Pad Locations (Not to Scale) X = 44 µm ± 25 µm Y = 228 ± 25 µm DC Bond Pad = 1 x 1 ±.5 µm RF Bond Pad = 1 x 1 ±.5 µm Chip Thickness = 11 ± 5 µm 2681 µm 2281 µm 1881 µm VG1 VD1 VG2 VD2 RFIN RFOUT 228 µm 146 µm 146 µm Biasing/De-Biasing Details: Bias is single sided and is from the top only. 44 µm Listed below are some guidelines for GaN device testing and wire bonding: a. Limit i positive i gate bias (G-S or G-D) to < 1V b. Know your devices breakdown voltages c. Use a power supply with both voltage and current limit. d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to your test fixture. i. Apply negative gate voltage ( V) to ensure that all devices are off ii. Ramp up drain bias to ~1 V iii. Gradually increase gate bias voltage while monitoring drain current until % of the operating current is achieved iv. Ramp up drain to operating bias v. Gradually increase gate bias voltage while monitoring drain current until the operating current is achieved e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable): i. Gradually decrease drain bias to V. ii. Gradually decrease gate bias to V. iii. Turn off supply voltages f. Repeat de-bias procedure for each amplifier stage Phone: (31) 814 Fax: (31) 812-711 E-mail: as-mps.sales@ngc.com Page 5 Approved for Public Release: Northrop Grumman Case 13 xxxx, 5/xx/13
Suggested Bonding Arrangement =.1uF, 15V (Shunt) VD1 VG2 VD2 =.1uF, 15V (Shunt) = 1 Ohms, 3V (Series) = 1 pf, 15V (Shunt) VG1 [4] [4] =.1uF, 5V (Shunt) [4] =.1uF, 5V (Shunt) = 1 pf, 5V (Shunt) RF Input VG1 VD1 VG2 VD2 RF Output Substrate RFIN RFOUT Substrate Recommended Assembly Notes 1. Bypass caps should be 1 pf (approximately) ceramic (single layer) placed no farther than 3 mils from the amplifier. 2. Best performance obtained from use of <1 mil (long) by 3 by.5 mil ribbons on input and output. 3. Part must be biased from both sides as indicated. 4. The.1uF, 5V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be used, do NOT use the.1uf, 5V Capacitors. Mounting Processes Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or AuSnattachment. NGAS recommends the use of AuSnfor high power devices to provide a good thermal path and a good RF path to ground. Maximum recommended temp during die attach is 3 o C for 3 seconds. Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up tool. CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS. PLEASE ALSO REFER TO OUR GaN Chip Handling Application Note BEFORE HANDLING, ASSEMBLING OR BIASING THESE MMICS! Phone: (31) 814 Fax: (31) 812-711 E-mail: as-mps.sales@ngc.com Page 6 Approved for Public Release: Northrop Grumman Case 13 1133, 6/3/13