Three-terminal experiments on Si-MgO tunneling structures

Similar documents
Supplementary Figure 1 High-resolution transmission electron micrograph of the

SUPPLEMENTARY INFORMATION

Supplementary information for Stretchable photonic crystal cavity with

High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors

MgO MTJ biosensors for immunomagnetic lateralflow

SUPPLEMENTARY INFORMATION

Compact size 3D magnetometer based on magnetoresistive sensors

Progress toward a thousandfold reduction in 1/ f noise in magnetic sensors using an ac microelectromechanical system flux concentrator invited

Nano-structured superconducting single-photon detector

HDD Technology Trends

Wu Lu Department of Electrical and Computer Engineering and Microelectronics Laboratory, University of Illinois, Urbana, Illinois 61801

Integration of III-V heterostructure tunnel FETs on Si using Template Assisted Selective Epitaxy (TASE)

Magnetic tunnel junction sensors with conetic alloy. Lei, ZQ; Li, GJ; Egelhoff Jr, WF; Lai, PT; Pong, PWT

Spin-Precession Organic Magnetic Sensor

Magnetic and Electromagnetic Microsystems. 4. Example: magnetic read/write head

Magnetic Spin Devices: 7 Years From Lab To Product. Jim Daughton, NVE Corporation. Symposium X, MRS 2004 Fall Meeting

Hybrid Group IV Nanophotonic Structures. Incorporating Diamond Silicon-Vacancy Color

SUPPLEMENTARY INFORMATION

Vertical field effect transistors realized by cleaved-edge overgrowth

NOVEL CHIP GEOMETRIES FOR THz SCHOTTKY DIODES

Machine-Aligned Fabrication of Submicron SIS Tunnel Junctions Using a Focused Ion Beam

Magnetic tunnel junction sensor development for industrial applications

Supporting Information. Vertical Graphene-Base Hot-Electron Transistor

InGaAs MOSFETs for CMOS:

High-Ohmic Resistors using Nanometer-Thin Pure-Boron Chemical-Vapour-Deposited Layers

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mv/decade and Ion = 10 A/m for Ioff = 1 na/m at VDS = 0.

IBM Research Report. Research Division Almaden - Austin - Beijing - Cambridge - Haifa - India - T. J. Watson - Tokyo - Zurich

Bistability in Bipolar Cascade VCSELs

SUPPLEMENTARY INFORMATION

THE MEMS FLUX CONCENTRATOR: POTENTIAL LOW-COST, HIGHSENSITIVITY MAGNETOMETER

Resonant Tunneling Device. Kalpesh Raval

General look back at MESFET processing. General principles of heterostructure use in FETs

The dynamics of magnetic vortex states in a single permalloy

An SIS-based Sideband-Separating Heterodyne Mixer Optimized for the 600 to 720 GHz Band.

Flip-Flopping Fractional Flux Quanta

Application Information

Fabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes

InGaAs MOSFET Electronics

Fabrication and Characterization of Broad-Area Lasers with Dry-Etched Mirrors

We are right on schedule for this deliverable. 4.1 Introduction:

Schottky Diode RF-Detector and Focused Ion Beam Post-Processing MURI Annual Review

Key Questions. ECE 340 Lecture 39 : Introduction to the BJT-II 4/28/14. Class Outline: Fabrication of BJTs BJT Operation

Long-distance propagation of short-wavelength spin waves. Liu et al.

Supplementary Figure S1 X-ray diffraction pattern of the Ag nanowires shown in Fig. 1a dispersed in their original solution. The wavelength of the

Supplementary Information. The origin of discrete current fluctuations in a fresh single molecule junction

MAGNETORESISTIVE random access memory

Performance of Microchannel Plates Fabricated Using Atomic Layer Deposition

Extended backside-illuminated InGaAs on GaAs IR detectors

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)

Supporting Information. Air-stable surface charge transfer doping of MoS 2 by benzyl viologen

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng

Basic Principles, Challenges and Opportunities of STT-MRAM for Embedded Memory Applications

Synthesis of Silicon. applications. Nanowires Team. Régis Rogel (Ass.Pr), Anne-Claire Salaün (Ass. Pr)

Sub-30 nm InAs Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO 2 Insulator

discovery in 1993 [1]. These molecules are interesting due to their superparamagneticlike

STUDY ON PLANAR-TYPE FERROMAGNETIC NANOSCALE DEVICES FABRICATED BY NOVEL NANOFABRICATION TECHNIQUES

Supplementary Materials for

Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions

FinFET Devices and Technologies

Low Thermal Resistance Flip-Chip Bonding of 850nm 2-D VCSEL Arrays Capable of 10 Gbit/s/ch Operation

Cavity QED with quantum dots in semiconductor microcavities

Integrated Circuits: FABRICATION & CHARACTERISTICS - 4. Riju C Issac

Chapter 2. Metallic nanowires: properties and devices

In this lecture we will begin a new topic namely the Metal-Oxide-Semiconductor Field Effect Transistor.

420 Intro to VLSI Design

Diode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!

Alternatives to standard MOSFETs. What problems are we really trying to solve?

IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM

Welcome to. A facility within the Nanometer Structure Consortium (nmc) at Lund University. nanolab. lund

Department of Electrical Engineering IIT Madras

Atomic-layer deposition of ultrathin gate dielectrics and Si new functional devices

Characterisation of Photovoltaic Materials and Cells

INTRAWEAPON WIRELESS COMMUNICATION

GRADE Graphene-based Devices and Circuits for RF Applications Collaborative Project

Low-temperature STM using the ac-josephson Effect

Micro- and Nano- Fabrication and Replication Techniques

Optical Interconnection in Silicon LSI

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34

Magnetoresistive sensors with pico-tesla sensitivities

Final Report. Contract Number Title of Research Principal Investigator

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014

Eindhoven University of Technology MASTER. Current in plane tunneling spin tunneling from a different perspective. Huijink, R.

Ultra High-Speed InGaAs Nano-HEMTs

A NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONIC

ANTENNA DEVELOPMENT FOR MULTIFUNCTIONAL ARMOR APPLICATIONS USING EMBEDDED SPIN-TORQUE NANO-OSCILLATOR (STNO) AS A MICROWAVE DETECTOR

Supporting Information. Epitaxially Aligned Cuprous Oxide Nanowires for All-Oxide, Single-Wire Solar Cells

Novel Josephson Junction Geometries in NbCu bilayers fabricated by Focused Ion Beam Microscope

Materials and Device Solutions Beyond Moore

AC magnetic measurements etc

Magnetostrictive LC Circuit Sensors* 1

TECHNO INDIA BATANAGAR (DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING) QUESTION BANK- 2018

EE C245 ME C218 Introduction to MEMS Design

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02

Miniature Mid-Infrared Thermooptic Switch with Photonic Crystal Waveguide Based Silicon-on-Sapphire Mach Zehnder Interferometers

Characterization of SOI MOSFETs by means of charge-pumping

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination

A New SiGe Base Lateral PNM Schottky Collector. Bipolar Transistor on SOI for Non Saturating. VLSI Logic Design

Microfabrication technologies for highly-laminated thick metallic cores and 3-D integrated windings

Spin torque and Magnetic order induced by supercurrent

Measurement and noise performance of nano-superconducting-quantuminterference devices fabricated by focused ion beam

Transcription:

Juliane Laurer AG Dr. Max Bougeard Mustermann Referat Kommunikation & Marketing Verwaltung Three-terminal experiments on Si-MgO tunneling structures SFB 689 C9: Spin Injection into Silicon Juliane Laurer AG Bougeard FAKULTÄT FÜR PHYSIK

Measurement configurations Non-local spin-valve geometry: Separation of charge and spin current No parasitic effects such as AMR Pure spin information BUT: Processing and measurement not easy since 29 only two groups reported on successful spin injection into silicon

Measurement configurations Non-local spin-valve geometry: Separation of charge and spin current No parasitic effects such as AMR Pure spin information BUT: Processing and measurement not easy since 29 only two groups reported on successful spin injection into silicon Three-terminal Hanle geometry: Only one tunnel contact for spin injection and detection No separation of charge and spin current & detector is biased Spin lifetimes are much longer than theoretically expected Debate on the origin of measured Hanle-like signals

Origin of 3T signal: competing models Group of R. Jansen: S. Sharma, et al. PRB 89, 7531 (214) Hanle effect due to spin injection into Si, but describing theory is incorrect Group of M. Tanaka: S. Sato, et al. APL 17, 3247 (215) Paramagnetic layer formed at ferromagnettunnel barrier interface Group of M. Yamamoto: T. Uemura, et al. APL 11, 132411 (212) Tunneling rates depend on external B-field Group of H. Jaffrès & A. Fert: M. Tran, et al. PRL 12, 3661 (29) Sequential tunneling via localized states in the tunnel barrier or at the interfaces Groups of H. Dery & F. Casanova: O. Txoperena, et al. PRL 113, 14661 (214) Magnetoresistance due to Pauli spin blockade in defect states in the tunnel barrier

Origin of 3T signal: competing models Group of R. Jansen: S. Sharma, et al. PRB 89, 7531 (214) Hanle effect due to spin injection into Si, but describing theory is incorrect Group of M. Tanaka: S. Sato, et al. APL 17, 3247 (215) Paramagnetic layer formed at ferromagnettunnel barrier interface Group of M. Yamamoto: T. Uemura, et al. APL 11, 132411 (212) Tunneling rates depend on external B-field Group of H. Jaffrès & A. Fert: M. Tran, et al. PRL 12, 3661 (29) Sequential tunneling via localized states in the tunnel barrier or at the interfaces Groups of H. Dery & F. Casanova: O. Txoperena, et al. PRL 113, 14661 (214) Magnetoresistance due to Pauli spin blockade in defect states in the tunnel barrier

Outline 1. Growth and characterization of epitaxial hybrid Si/MgO/Fe/Au tunnel junctions 2. Three-terminal experiments on epitaxial tunnel junctions

Sample growth in combined MBE system Vacuum channel connected Si/Ge- and metal-mbe Growth of hybrid stacks without breaking the vacuum Good interface control Possibility of epitaxial growth with single crystalline tunnel barriers

Epitaxial Si/MgO/Fe/Au-stacks Au Fe MgO n + -Si Si/MgO/Fe/Au Atomically flat Si-MgO and Fe-MgO interfaces Single crystalline MgO tunnel barrier MgO predominantly grows in MgO 11 direction on Si 11

Epitaxial Si/MgO/Fe/Au-stacks Au Fe MgO n + -Si Fe 1 Si 11 Epitaxial Si/MgO/Fe/Au-stack with pronounced four-fold in plane magnetic anisotropy Excellent material for Si-based spin injection experiments

Current (ma) 3T experiments on Si/MgO/Fe/Au 2. 1.5 T = 4.2 K Extraction 1..5. -.5-1. Injection -1. -.5..5 Voltage (V)

Current (ma) Voltage 3T (µv) 3T experiments on Si/MgO/Fe/Au 2. 1.5 T = 4.2 K Extraction 35 T = 4.2 K 3 25 2 15 1 I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA 1. 5.5. -.5-1. Injection -1. -.5..5 Voltage (V) Several B dependent signals: 1 T < B < 2 T Rotation of magnetization out of plane -5-1 -15-2. -1.5-1. -.5..5 1. 1.5 2. Magnetic field (T)

Current (ma) Voltage 3T (µv) 3T experiments on Si/MgO/Fe/Au 2. 1.5 T = 4.2 K Extraction 35 T = 4.2 K 3 25 2 15 1 I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA 1. 5.5. -.5-1. Injection -1. -.5..5 Voltage (V) Several B dependent signals: 1 T < B < 2 T Rotation of magnetization out of plane -5-1 -15-2. -1.5-1. -.5..5 1. 1.5 2. 7 mt < B < 1 T Magnetoresistive background? Magnetic field (T)

Current (ma) Voltage 3T (µv) 3T experiments on Si/MgO/Fe/Au 2. 1.5 T = 4.2 K Extraction 35 T = 4.2 K 3 25 2 15 1 I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA 1. 5.5. -.5-1. Injection -1. -.5..5 Voltage (V) Several B dependent signals: 1 T < B < 2 T Rotation of magnetization out of plane -5-1 -15-2. -1.5-1. -.5..5 1. 1.5 2. 7 mt < B < 1 T Magnetoresistive background? Magnetic field (T) B < 7 mt R drops with increasing B Hanle signal?

Curent (ma) 3T experiments with ohmic contacts 1. T = 4.2 K Extraction.5. -.5-1. Injection -1. -.5..5 1. Voltage (V)

Curent (ma) Voltage 3T (µv) 3T experiments with ohmic contacts 8 7 6 5 T = 4.2 K I = -15µA I = -5µA I = 2µA I = 2µA I = 5µA 4 1. T = 4.2 K Extraction 3.5 2. -.5-1. Injection -1. -.5..5 1. Voltage (V) 1-1 -2-2. -1.5-1. -.5..5 1. 1.5 2. Magnetic field (T) Ohmic contacts no ferromagnet involved and no sign of tunneling Weak quadratic background signal No evidence of Hanle-type signal around B =

Current (ma) Samples without ferromagnet.4 T = 4.2 K Extraction.2. -.2 Injection -.8 -.6 -.4 -.2..2.4.6 Voltage (V)

Current (ma) Voltage 3T(mV) Samples without ferromagnet 1..5..4 T = 4.2 K Extraction -.5.2. -.2 Injection -.8 -.6 -.4 -.2..2.4.6 Voltage (V) -1. -1.5 T = 4.2 K -2. -2. -1.5-1. -.5..5 1. 1.5 2. Magnetic field (T) I = -25µA I = -2.5µA I = -.5µA I = 3µA I = 25µA I = 5µA I = 15µA Weak linear background signal, especially for current extraction Strong Hanle-like signal around B = with FWHM 7 mt BUT: no ferromagnet Signal does NOT originate from spin injection into Si channel

Voltage 3T (µv) Voltage 3T (µv) Comparison: Samples with & without Fe Hanle-like signal with same FWHM for both samples BUT: without Fe: R increases with increasing B with Fe: R decreases with increasing B Magnetoresistive effect from tunneling through MgO barrier? 75 5 25-25 -5-75 -1-125 -15-175 Si / MgO / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA 35 3 25 2 15 1 Si / MgO / Fe / Au I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA 5-5 -1-15 -1.5-1. -.5..5 1. 1.5 Magnetic field (T)

Voltage 3T (µv) Voltage 3T (µv) Comparison: Samples with & without Fe Hanle-like signal with same FWHM for both samples BUT: without Fe: R increases with increasing B with Fe: R decreases with increasing B Magnetoresistive effect from tunneling through MgO barrier? 75 5 25-25 -5-75 -1-125 -15-175 Si / MgO / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA B = Groups of H. Dery & F. Casanova: O. Txoperena, et al. PRL 113, 14661 (214) Magnetoresistance due to Pauli spin blockade in defect states in the tunnel barrier 35 3 25 2 15 1 5-5 -1 Si / MgO / Fe / Au I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA -15-1.5-1. -.5..5 1. 1.5 Magnetic field (T)

Voltage 3T (µv) Voltage 3T (µv) Comparison: Samples with & without Fe Hanle-like signal with same FWHM for both samples BUT: without Fe: R increases with increasing B with Fe: R decreases with increasing B Magnetoresistive effect from tunneling through MgO barrier? 75 5 25-25 -5-75 -1-125 -15-175 Si / MgO / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA B = B Groups of H. Dery & F. Casanova: O. Txoperena, et al. PRL 113, 14661 (214) Magnetoresistance due to Pauli spin blockade in defect states in the tunnel barrier 35 3 25 2 15 1 5-5 -1 Si / MgO / Fe / Au I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA -15-1.5-1. -.5..5 1. 1.5 Magnetic field (T)

Voltage 3T (mv) Voltage 3T (µv) Samples without ferromagnet Temperature dependence Dependence on orientation of B 8.5. 6 B out of plane B 45 B in plane Injection: I = -1µA T = 4.2K -.5 4-1. -1.5 Extraction I = 1µA -2. -2. -1.5-1. -.5..5 1. 1.5 2. Magnetic field (T) 5K 4K 3K 2K 1K 4K 2 -.3 -.2 -.1..1.2.3 Magnetic field (T) Background decreases with increasing temperature Hanle-like signal vanishes at T 5 K Hanle-like signal is independent on orientation of external magnetic field

Voltage (µv) Voltage (µv) Summary and outlook Epitaxial Si/MgO/Fe/Au tunneling stacks single crystalline MgO tunnel barrier Pronounced fourfold magnetic anisotropy Three-terminal experiments with & without Fe layer Hanle-like signal only occurs if MgO tunnel barrier is involved Signal cannot only stem from injected spins in the Si channel Analogies to Pauli spin blockade model in defect states of MgO 75 5 25-25 -5-75 -1-125 -15-175 35 3 25 2 15 1 5-5 -1 R211A2_13 Si / MgO / Au R29A4_4 Si / MgO / Fe / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA -15-1.5-1. -.5..5 1. 1.5 Magnetic field (T) Juliane Laurer, AG Bougeard, Juliane.Laurer@ur.de

Voltage (µv) Voltage (µv) Summary and outlook Epitaxial Si/MgO/Fe/Au tunneling stacks single crystalline MgO tunnel barrier Pronounced fourfold magnetic anisotropy Three-terminal experiments with & without Fe layer Hanle-like signal only occurs if MgO tunnel barrier is involved Signal cannot only stem from injected spins in the Si channel Analogies to Pauli spin blockade model in defect states of MgO 75 5 25-25 -5-75 -1-125 -15-175 35 3 25 2 15 1 5-5 -1 R211A2_13 Si / MgO / Au R29A4_4 Si / MgO / Fe / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA -15-1.5-1. -.5..5 1. 1.5 Magnetic field (T) Outlook Non-local spin-valve and non-local Hanle measurements for pure spin information Juliane Laurer, AG Bougeard, Juliane.Laurer@ur.de

Acknowledgment AG Bougeard Prof. Dr. Dominique Bougeard Mareen Schäfer Michaela Trottmann Chair Weiss Prof. Dr. Dieter Weiss Dr. Mariusz Ciorga Chair Back Prof. Dr. Christian Back Prof. Dr. Josef Zweck Dr. Matthias Kronseder Markus Härtinger Thank you for your attention.

RHEED pattern of Si/MgO/Fe/Au Si(1)<11> MgO(1)<11> Fe(1)<1> Au(1)<11> Si(1)<1> MgO(1)<1> Fe(1)<11> Au(1)<1>

Kerr signal (a. u.) Kerr signal (a. u.) MOKE measurements 1..75 in plane easy axis Kerr signal 4 3 2 out of plane Kerr signal 1.5-1.25-2 -3. -4-5 -4-3 -2-1 1 2 3 4 5 Magnetic field (mt) -2-1 1 2 Magnetic field (T) Along in plane easy axis: Coercive field H C.36 mt Out of plane, i.e. along hard axis: Saturation at B 2.1 T

Epitaxial Si/MgO/Fe/Au-stacks Au Fe Si 11 MgO MgO 1 MgO 11 n + -Si Si/MgO/Fe/Au Very sharp and atomically flat interfaces MgO predominantly grows in MgO 11 direction on Si 11 BUT: observation of both, MgO 11 and MgO 1

Voltage 3T (µv) Voltage 3T (mv) Samples with ferromagnet Temperature dependence Dependence on orientation of B 393.6 1 393.4-1 393.2 393. Extraction: I = -8µA T = 4.2K B out of plane B 45 B in plane -2-3 -4-5 -2.5-2. -1.5-1. -.5..5 1. 1.5 2. 2.5 Magnetic field (T) 4.2K 4K 5K 7K 1K 13K 15K 175K 392.8 392.6 392.4 392.2 392. -1. -.75 -.5 -.25..25.5.75 1. Magnetif field (T) Hanle-like signal present at least up to T = 175 K Strength of background signal decreases In-plane magnetic anisotropy comes into play Hanle-like signal might still be present in plane

V 3T (µv) R (k ) 3T comparison to Txoperena 14 8 6 4-1µA -5µA -2µA -5µA -3µA -1µA -,5µA µa R 3T ( ) 12 1 8 6 R R = dv/di R = V(B=)/I 4 3 2 2 4 1 2 -.5 -.25..25.5 magnetic field (T) -6-4 -2 V 3T @ B=T (mv)

Voltage (µv) Voltage (µv) V NL (µv) V NL (µv) Voltage (µv) V NL (µv) V NL (µv) Voltage (µv) V NL (µv) V NL (µv) Non-local spin-valve experiments 5 Extraction Injection 12 8 4 -.1 -.8 -.6 -.4 -.2..2.4.6.8.1-34 -35-36 I = 3 µa T = 4.3 K magnetic field (T) R241A2_6 Extraction -5-37 Inj 4, Det 7-1 I=2µA I=-2µA -4-8 -38-39 -5 95-4 -1 9-41 Inj 7, Det 4-15 85-42 -2 8 11-25 I=4µA I=-4µA 75 1 Inj 6, Det 7-2 -25-4 -8 9-3 -35-4 I=6µA I=-6µA -12-16 -2-24 6 5 4 Inj 7, Det 6 Det 4 Det 6 Det 7 -.1 -.8 -.6 -.4 -.2..2.4.6.8.1 -.1 -.8 -.6 -.4 -.2..2.4.6.8.1 3 magnetic field (T) magnetic field (T) -7.5-6. -8. -6.5-8.5-7. -9. -9.5-1. -1.5 Inj 4, Det 6-7.5-8. -8.5-9. -9.5-11. Inj 6, Det 4-1. -11.5-1.5-12. -11. -.1 -.8 -.6 -.4 -.2..2.4.6.8.1 magnetic field (T)

Mesa etching with channel isolation Au MgO Fe n + -Si Ion beam etching (IBE, Ar ions) Reactive ion etching (RIE, SF 6 + Ar) Al 2 O 3 deposition (ALD) Lift-off

Processing steps on the mesa E-beam lithography Ti/Au evaporation IBE RIE (SF 6 + CHF 3 ) HF dip Ti/Au evaporation

Epitaxy and lattice mismatch

2024 © hobbydocbox.com Privacy Policy | Terms of Service | Feedback