E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Application Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture G D S I-PAK (TO-5AA) Features Max r DS(on) =.mω at V GS = V, I D = 35A Max r DS(on) = 4.mΩ at V GS = 4.5V, I D = 35A March 6 Low gate charge: Q g() = 8nC(Typ), V GS = V Low gate resistance Avalanche rated and % tested RoHS Compliant G D S Short Lead I-PAK G L E A D F R E E I MP L E M TIO N D S TA MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage 5 V V GS Gate to Source Voltage ± V I D -Continuous (Die Limited) 54 A Drain Current -Continuous (Package Limited) 35 -Pulsed (Note ) 3 E AS Single Pulse Avalanche Energy (Note ) 7 mj P D Power Dissipation 5 W T J, T STG Operating and Storage Temperature -55 to 75 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case TO-5,TO-5 3. C/W R θja Thermal Resistance, Junction to Ambient TO-5,TO-5 C/W R θja Thermal Resistance, Junction to Ambient TO-5,in copper pad area 5 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD878 FDD878 TO-5AA 3 mm 5 units FDU878 FDU878 TO-5AA N/A(Tube) N/A 75 units FDU878 FDU878_F7 TO-5AA N/A(Tube) N/A 75 units 6 Fairchild Semiconductor Corporation
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 5µA, V GS = V 5 V B VDSS T J I DSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D = 5µA, referenced to 5 C V DS = V, V GS = V 4.3 mv/ C T J = 5 C 5 I GSS Gate to Source Leakage Current V GS = ±V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5µA..7.5 V V GS(th) T J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Dynamic Characteristics I D = 5µA, referenced to 5 C µa -6.5 mv/ C V GS = V, I D = 35A 8.5. V GS = 4.5V, I D = 35A. 4. V GS = V, I D = 35A T J = 75 C. 8. C iss Input Capacitance 9 pf V DS = 3V, V GS = V, C oss Output Capacitance 3 3 pf f = MHz C rss Reverse Transfer Capacitance 6 4 pf R g Gate Resistance f = MHz.4 Ω Switching Characteristics t d(on) Turn-On Delay Time 7 4 ns t V DD = 3V, I D = 35A r Rise Time 9 8 ns V GS = V, R GS = 9Ω t d(off) Turn-Off Delay Time 36 ns t f Fall Time 4 5 ns Q g Total Gate Charge V GS = V to V 8 5 nc Q V DD = 3V g Total Gate Charge V GS = V to 5V 9.4 3 nc I D = 35A Q gs Gate to Source Gate Charge 3. nc I g =.ma Q gd Gate to Drain Miller Charge 4. nc mω Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = 35A.96.5 V GS = V, I S = 5A.86. t rr Reverse Recovery Time I F = 35A, di/dt = A/µs 5 38 ns Q rr Reverse Recovery Charge I F = 35A, di/dt = A/µs 7 6 nc Notes: : Pulse time < 3us,Duty cycle = %. : Starting T J = 5 o C, L =.3mH, I AS =.7A,V DD = 3V, V GS = V. V
Typical Characteristics T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 7 6 5 4 3 V GS = V V GS = 4.5V PULSE DURATION = 8µs DUTY CYCLE =.5%MAX V GS = 3.5V V GS = 3V 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V).8.6.4...8 Figure. On Region Characteristics I D = 35A V GS = V.6-8 -4 4 8 6 T J, JUNCTION TEMPERATURE ( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rds(on), ON-RESISTANCE (mω) 7 6 5 4 3 V GS = 3V PULSE DURATION = 8µs DUTY CYCLE =.5%MAX V GS = 3.5V V GS = 4.5V V GS = V 3 4 5 6 7 I D, DRAIN CURRENT(A) Figure. Normalized On-Resistance vs Drain Current and Gate Voltage 4 3 I D = 5A T J = 5 o C PULSE DURATION = 8µs DUTY CYCLE =.5%MAX T J = 75 o C 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 7 6 5 4 3 PULSE DURATION = 8µs DUTY CYCLE =.5%MAX T J = 75 o C T J = 5 o C T J = -55 o C..5..5 3. 3.5 4. 4.5 V GS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 75 o C T J = 5 o C T J = -55 o C E-3...4.6.8...4 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 6 4 5 5 5 Figure 7. 5 V DD = 3V V DD = 8V V DD = 8V Q g, GATE CHARGE(nC) CAPACITANCE (pf) 3 f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 5 o C T J = 5 o C.. t AV, TIME IN AVALANCHE(ms) 3 ID, DRAIN CURRENT (A) 6 5 4 3 C oss C rss R θjc = 3. o C/W V GS = V V GS = 4.5V C iss 5 5 75 5 5 75 T C, CASE TEMPERATURE( o C) 3 Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) 5 LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED T C = 5 o C. V DS, DRAIN TO SOURCE VOLTAGE (V) us us ms ms DC 5 ), PEAK TRANSIENT POWER (W) P(PK 7 V GS = V SINGLE PULSE T C = 5 o C FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: 75 T I = I C 5 ---------------------- 5-5 -4-3 - - t, PULSE WIDTH (s) Figure. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power Dissipation 4
Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. SINGLE PULSE E-3-5 -4-3 - - t, RECTANGULAR PULSE DURATION(s) Figure 3. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C 5
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E CMOS EnSigna FACT FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I C i-lo ImpliedDisconnect IntelliMAX FACT Quiet Series Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power47 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect μserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM TinyLogic TINYOPTO TruTranslation UHC UniFET UltraFET VCX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9