FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 4V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package Marking SOT-23 4N4AT Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value SOT-23 Unit Drain-Source Voltage (V GS = V) V DSS 4 V Continuous Drain Current I D 4 A Pulsed Drain Current (note1) I DM 16 A Gate-Source Voltage V GSS ±2 V Single Pulse Avalanche Energy (note2) E AS 3.3 mj Avalanche Current I AS 4.7 A Power Dissipation (T C = 25ºC ) P D 1.4 W Operating Junction and Storage Temperature Range T J, T stg -55~+15 ºC Thermal Resistance Parameter Symbol Value SOT-23 Unit Thermal Resistance, Junction-to-Ambient R thja 89 ºC/W V1. 1
Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25µA 4 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 4V, V GS = V, T J = 25ºC -- -- 1 V DS = 4V, V GS = V, T J = 15ºC -- -- 1 μa Gate-Source Leakage I GSS V GS = ±2V -- -- ±1 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25µA 1 1.7 2.4 V Drain-Source On-Resistance (Note3) R DS(on) V GS = 1V, I D = 2A -- 29 34 mω V GS = 4.5V, I D = 2A -- 38 46 mω Forward Transconductance (Note3) g fs V DS = 5V, I D =1A -- 3.8 -- S Dynamic Input Capacitance C iss -- 659 -- V GS = V, Output Capacitance C oss V DS = 2V, f = 1.MHz -- 49 -- Reverse Transfer Capacitance C rss -- 3 -- Total Gate Charge Q g -- 1 -- Gate-Source Charge Q gs V DD = 2V, I D = 4A, V GS = 1V -- 1.6 -- Gate-Drain Charge Q gd -- 2.4 -- pf nc Turn-on Delay Time t d(on) -- 5 -- Turn-on Rise Time t r V DD = 2V, I D = 4A, -- 4 -- Turn-off Delay Time t d(off) R G = 2.5Ω -- 15 -- ns Turn-off Fall Time t f -- 4 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S -- -- 4 T C = 25ºC Pulsed Diode Forward Current I SM -- -- 16 A Body Diode Voltage V SD T J = 25ºC, I SD = 2A, V GS = V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. V DD = 4V, R G = 25Ω, Starting T J = 25 C 3. Pulse Test: Pulse Width 3μs, Duty Cycle 1% V1. 2
V GS, Gate-to-Source Voltage (V) R DS(on), On-Resistance (mω) I D, Drain Current (A) I s, Source Current (A) Capacitance (pf) I D, Drain Current (A) Typical Characteristics T J = 25ºC, unless otherwise noted 3 25 2 1V 7V 4.5V 4V Figure 1. Output Characteristics 15 1 Figure 2. Transfer Characteristics 15 3.5V 1 5 3V 5 T J = 25ºC T J = 125ºC 1 2 3 4 5 V DS, Drain-to-Source Voltage (V) 1 2 3 4 5 V GS, Gate-to-Source Voltage (V) 5 Figure 3. On-Resistance vs. Drain Current 1 Figure 4. Capacitance 45 T J = 25ºC 8 4 35 V GS = 4.5V V GS = 1V 6 C iss 3 25 4 2 V GS = f = 1MHz Crss C oss 2 1 2 3 4 5 I D, Drain Current (A) 1 2 3 4 V DS, Drain-to-Source Voltage (V) 12 Figure 5. Gate Charge 1 2 Figure 6. Body Diode Forward Voltage 1 8 6 1 1-1 T J = 125ºC T J = 25ºC 4 2 V DD = 2V 2 4 6 8 2 Q g, Total Gate Charge (nc) 1-2 1-3 1-4 1-5..2.4.6.8 1. 1.2 V SD, Source-to-Drain Voltage (V) V1. 3
I D, Drain Current(A) V BR(DSS), (Normalized) Z thjc, Thermal Impedance (Normalized) R DS(on), (Normalized) V GS(th), (Variance) Typical Characteristics T J = 25ºC, unless otherwise noted 2. 1.5 Figure 7. On-Resistance vs. Junction Temperature V GS = 1V I D = 2A 1..5. Figure 8. Threshold Voltage vs. Junction Temperature I D = 25µA 1. -.5-1..5-5 -25 25 5 75 1 125 15 T J, Junction Temperature (ºC) -1.5-5 -25 25 5 75 1 125 15 T J, Junction Temperature (ºC) 1.3 Figure 9. Breakdown voltage vs. Junction Temperature Figure 1. Transient Thermal Impedance 1.2 I D = 25µA 1 1.1 1.9.8-5 5 1 15 T J, Junction Temperature (ºC) Figure 11. Safe operation area for 1-1 1-2 1-3 1 1-5 1-4 1-3 1-2 1-1 T p, Pulse Width (s) D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 Single Pulse 1 2 1 2 1 1-1 t p = 1us t p = 1us t p = 1ms t p = 1s t p = 1s DC 1-2 1-2 1-1 1 1 2 V DS, Drain-Source Voltage(V) V1. 4
Figure A:Gate Charge Test Circuit and Waveform Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V1. 5
SOT-23 6 V1.
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