High Temperature Stability and High Reliability Conditions FEATURES

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Transcription:

Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-218 Compatible PRIMARY CHARACTERISTICS V BR 11.1 V to 52.8 V P PPM (1 x μs) 66 W P PPM (1 x 1 μs) 52 W P D 8 W V WM 1 V to 43 V I FSM 7 A T J max. 175 C Polarity Uni-directional Package DO-218AC FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T J = 175 C capability suitable for high reliability and automotive requirement Available in uni-directional polarity only Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge specification (varied by test condition) Meets MSL level 1, per J-STD-2, LF maximum peak of 245 C AEC-Q11 qualified - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AC Molding compound meets UL 94 V- flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q11 qualified Terminals: matte tin plated leads, solderable per J-STD-2 and JESD 22-B12 HE3 suffix meets JESD 21 class 2 whisker test Polarity: heatsink is anode RATINGS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT with 1/ μs waveform Peak pulse power dissipation P PPM 66 W with 1/1 μs waveform 52 Power dissipation on infinite heatsink at T C = 25 C (fig. 1) P D 8. W Peak pulse current with 1/ μs waveform I (1) PPM See next table A Peak forward surge current 8.3 ms single half sine-wave I FSM 7 A Operating junction and storage temperature range T J, T STG -55 to +175 C (1) Non-repetitive current pulse derated above T A = 25 C Revision: 3-Dec-218 1 Document Number: 87734

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) DEVICE TYPE BREAKDOWN V BR (V) MIN. NOM. MAX. TEST CURRENT I T (ma) STAND-OFF V WM (V) REVERSE LEAKAGE AT V WM I D (μa) REVERSE LEAKAGE AT V WM T J = 175 C I D (μa) MAX. PEAK PULSE CURRENT AT 1/ μs WAVEFORM (A) CLAMPING AT I PPM V C (V) TYPICAL TEMP. COEFFICIENT OF V BR (1) T (%/ C) SM8S1AT 11.1 11.7 12.3 5. 1. 15 25 388 17..69 SM8S11AT 12.2 12.9 13.5 5. 11. 1 15 363 18.2.72 SM8S12AT 13.3 14. 14.7 5. 12. 1 15 332 19.9.74 SM8S13AT 14.4 15.2 15.9 5. 13. 1 15 37 21.5.76 SM8S14AT 15.6 16.4 17.2 5. 14. 1 15 284 23.2.78 SM8S15AT 16.7 17.6 18.5 5. 15. 1 15 27 24.4.8 SM8S16AT 17.8 18.8 19.7 5. 16. 1 15 254 26..81 SM8S17AT 18.9 19.9 2.9 5. 17. 1 15 239 27.6.82 SM8S18AT 2. 21.1 22.1 5. 18. 1 15 226 29.2.83 SM8S2AT 22.2 23.4 24.5 5. 2. 1 15 24 32.4.85 SM8S22AT 24.4 25.7 26.9 5. 22. 1 15 186 35.5.86 SM8S24AT 26.7 28.1 29.5 5. 24. 1 15 17 38.9.87 SM8S26AT 28.9 3.4 31.9 5. 26. 1 15 157 42.1.88 SM8S28AT 31.1 32.8 34.4 5. 28. 1 15 145 45.4.89 SM8S3AT 33.3 35.1 36.8 5. 3. 1 15 136 48.4.9 SM8S33AT 36.7 38.7 4.6 5. 33. 1 15 124 53.3.91 SM8S36AT 4. 42.1 44.2 5. 36. 1 15 114 58.1.91 SM8S4AT 44.4 46.8 49.1 5. 4 1 15 12 64.5.92 SM8S43AT 47.8 5.3 52.8 5. 43 1 15 95.1 69.4.93 For all types maximum V F = 1.8 V at I F = 1 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (2) To calculate V BR vs. junction temperature, use the following formula: V BR at T J = V BR at 25 C x (1 + T x (T J - 25)) THERMAL CHARACTERISTICS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R JC.9 C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM8S1ATHE3/I (1) 2.65 I 75 13" diameter plastic tape and reel, anode towards the sprocket hole (1) AEC-Q11 qualified Revision: 3-Dec-218 2 Document Number: 87734

RATINGS AND CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 8. 1 Power Dissipation (W) 6. 4. 2. Reverse Surge Power (W) 5 1 15 2 Case Temperature ( C) Fig. 1 - Power Derating Curve 1 1 Pulse Width (ms) - ½ I PP Exponential Waveform Fig. 4 - Reverse Power Capability 6 1 Load Dump Power (W) 5 4 3 2 25 5 75 1 125 15 175 Case Temperature ( C) Fig. 2 - Load Dump Power Characteristics (1 ms Exponential Waveform) Transient Thermal Impedance ( C/W) 1 1.1 t - Pulse Width (s) R θja R θjc.1.1.1 1 1 1 Fig. 5 - Typical Transient Thermal Impedance Input Peak Pulse Current (%) 15 1 5 t r = 1 μs Peak Value I PPM Half Value - I PPM t d 1 2 3 4 t - Time (ms) T J = 25 C Pulse Width (t d ) is Defined as the Point Where the Peak Current Decays to 5 % of I PPM I PP 2 Fig. 3 - Pulse Waveform C J - Junction Capacitance (pf) 1 1 1 Measured at Stand-Off Voltage V WM T J = 25 C f = 1. MHz V sig = 5 mv p-p Measured at Zero Bias 15 2 25 3 35 4 45 V WM - Reverse Stand-Off Voltage (V) Fig. 6 - Typical Junction Capacitance Revision: 3-Dec-218 3 Document Number: 87734

PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AC.413 (1.5).342 (8.7).374 (9.5).327 (8.3).628 (16.).592 (15.).539 (13.7).524 (13.3).116 (3.).93 (2.4).413 (1.5).374 (9.5) Mounting Pad Layout.15 (3.8).126 (3.2).91 (2.3).67 (1.7).116 (3.).93 (2.4).366 (9.3).343 (8.7).46 (1.3).382 (9.7).366 (9.3).343 (8.7).66 (15.4).583 (14.8) Lead 1.197 (5.).185 (4.7).138 (3.5).98 (2.5).4 (.1) (NOM.) Lead 2 / metal heatsink.28 (.7).2 (.5).98 (2.5).59 (1.5) Revision: 3-Dec-218 4 Document Number: 87734

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